JPS5793572A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5793572A
JPS5793572A JP55170408A JP17040880A JPS5793572A JP S5793572 A JPS5793572 A JP S5793572A JP 55170408 A JP55170408 A JP 55170408A JP 17040880 A JP17040880 A JP 17040880A JP S5793572 A JPS5793572 A JP S5793572A
Authority
JP
Japan
Prior art keywords
film
oxidized
silicon
layer
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55170408A
Other languages
Japanese (ja)
Other versions
JPH022298B2 (en
Inventor
Takeo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55170408A priority Critical patent/JPS5793572A/en
Publication of JPS5793572A publication Critical patent/JPS5793572A/en
Publication of JPH022298B2 publication Critical patent/JPH022298B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment

Abstract

PURPOSE:To form a semiconductor device having small floating capacity between a digit line and other conductive layer by thermally oxidizing a plurality of polycrystalline silicon layers of different layers with a thin film containing an oxidation resistant material as mast and forming an interlayer insulating film. CONSTITUTION:A channel stopper 602, a thick oxidized film 603, a thin oxidized silicon film 604 and a nitrided silicon film 605 are formed on a P type silicon substrate 601 surface. After a polycrystalline silicon layer 606 is grown in vapor phase, a phosphorus is diffused, and is selectively etched. A thick oxidized silicon film 607 is then formed on the layer 606. Subsequently, a hole is formed to grow a polycrystalline silicon 609, a phosphorus is diffused to form an N type diffused layer 610, and is patterned to form a digit line 609. Then, an oxidized film 611 is formed on the surface, the insulating film is then selectively etched to form a gate oxidized film 612, and a transfer gate 613 is formed.
JP55170408A 1980-12-03 1980-12-03 Manufacture of semiconductor device Granted JPS5793572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170408A JPS5793572A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170408A JPS5793572A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5793572A true JPS5793572A (en) 1982-06-10
JPH022298B2 JPH022298B2 (en) 1990-01-17

Family

ID=15904362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170408A Granted JPS5793572A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793572A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59113659A (en) * 1982-12-20 1984-06-30 Toshiba Corp Mos dynamic memory
EP0116333A2 (en) * 1983-02-10 1984-08-22 Siemens Aktiengesellschaft Dynamic random access semiconductor memory (DRAM) and method of manufacturing the same
JPS6185857A (en) * 1984-10-04 1986-05-01 Oki Electric Ind Co Ltd Manufacture of semiconductor memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534500A (en) * 1978-08-30 1980-03-11 Siemens Ag Integrated mos semiconductor memory and method of manufacturing same
JPS5588368A (en) * 1978-12-26 1980-07-04 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
JPS5591158A (en) * 1978-12-26 1980-07-10 Ibm Method of fabricating semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534500A (en) * 1978-08-30 1980-03-11 Siemens Ag Integrated mos semiconductor memory and method of manufacturing same
JPS5588368A (en) * 1978-12-26 1980-07-04 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
JPS5591158A (en) * 1978-12-26 1980-07-10 Ibm Method of fabricating semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59113659A (en) * 1982-12-20 1984-06-30 Toshiba Corp Mos dynamic memory
EP0116333A2 (en) * 1983-02-10 1984-08-22 Siemens Aktiengesellschaft Dynamic random access semiconductor memory (DRAM) and method of manufacturing the same
JPS6185857A (en) * 1984-10-04 1986-05-01 Oki Electric Ind Co Ltd Manufacture of semiconductor memory

Also Published As

Publication number Publication date
JPH022298B2 (en) 1990-01-17

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