JPS6423529A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6423529A JPS6423529A JP17917887A JP17917887A JPS6423529A JP S6423529 A JPS6423529 A JP S6423529A JP 17917887 A JP17917887 A JP 17917887A JP 17917887 A JP17917887 A JP 17917887A JP S6423529 A JPS6423529 A JP S6423529A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- insulating layer
- crystal silicon
- silicon substrate
- thermal oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To continuously form a buried insulating layer by a one-time implantation of high-concentration ions corresponding to a change in a depth direction by a method wherein, after a thin thermal oxidation film has been formed on a single-crystal silicon substrate, the ions are implanted by selecting a thickness and a shape of a thin-film pattern. CONSTITUTION:After a thin thermal oxidation film 4 has been formed on a single-crystal silicon substrate 1, polysilicon 5 is deposited. After that, a resist pattern is formed and a post-baking operation is executed. After that, the polysilicon is taper-etched; a resist pattern 6 is formed. Then, if oxygen ions are implanted, it is possible to form a buried insulating layer 7 composed of an oxide film with a definite thickness around the center of the definite depth from the surface in a part which does not contain the pattern 6. In addition, it is possible to form the buried insulating layer 7 with a taper which is changed in accordance with a thickness of the pattern directly under the tapered pattern 6. Then, if the pattern 6 and the thermal oxidation film 4 are removed, it is possible to form a single-crystal silicon part 1 which has been divided into two or more islands using the insulating layer inside the single-crystal silicon substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17917887A JPS6423529A (en) | 1987-07-20 | 1987-07-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17917887A JPS6423529A (en) | 1987-07-20 | 1987-07-20 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6423529A true JPS6423529A (en) | 1989-01-26 |
Family
ID=16061299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17917887A Pending JPS6423529A (en) | 1987-07-20 | 1987-07-20 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6423529A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1012850A (en) * | 1995-12-30 | 1998-01-16 | Hyundai Electron Ind Co Ltd | Soi substrate and its manufacture |
-
1987
- 1987-07-20 JP JP17917887A patent/JPS6423529A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1012850A (en) * | 1995-12-30 | 1998-01-16 | Hyundai Electron Ind Co Ltd | Soi substrate and its manufacture |
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