JPS6423529A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6423529A
JPS6423529A JP17917887A JP17917887A JPS6423529A JP S6423529 A JPS6423529 A JP S6423529A JP 17917887 A JP17917887 A JP 17917887A JP 17917887 A JP17917887 A JP 17917887A JP S6423529 A JPS6423529 A JP S6423529A
Authority
JP
Japan
Prior art keywords
pattern
insulating layer
crystal silicon
silicon substrate
thermal oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17917887A
Other languages
Japanese (ja)
Inventor
Masato Nishizawa
Yoshio Tsuruta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP17917887A priority Critical patent/JPS6423529A/en
Publication of JPS6423529A publication Critical patent/JPS6423529A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To continuously form a buried insulating layer by a one-time implantation of high-concentration ions corresponding to a change in a depth direction by a method wherein, after a thin thermal oxidation film has been formed on a single-crystal silicon substrate, the ions are implanted by selecting a thickness and a shape of a thin-film pattern. CONSTITUTION:After a thin thermal oxidation film 4 has been formed on a single-crystal silicon substrate 1, polysilicon 5 is deposited. After that, a resist pattern is formed and a post-baking operation is executed. After that, the polysilicon is taper-etched; a resist pattern 6 is formed. Then, if oxygen ions are implanted, it is possible to form a buried insulating layer 7 composed of an oxide film with a definite thickness around the center of the definite depth from the surface in a part which does not contain the pattern 6. In addition, it is possible to form the buried insulating layer 7 with a taper which is changed in accordance with a thickness of the pattern directly under the tapered pattern 6. Then, if the pattern 6 and the thermal oxidation film 4 are removed, it is possible to form a single-crystal silicon part 1 which has been divided into two or more islands using the insulating layer inside the single-crystal silicon substrate.
JP17917887A 1987-07-20 1987-07-20 Manufacture of semiconductor device Pending JPS6423529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17917887A JPS6423529A (en) 1987-07-20 1987-07-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17917887A JPS6423529A (en) 1987-07-20 1987-07-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6423529A true JPS6423529A (en) 1989-01-26

Family

ID=16061299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17917887A Pending JPS6423529A (en) 1987-07-20 1987-07-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6423529A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012850A (en) * 1995-12-30 1998-01-16 Hyundai Electron Ind Co Ltd Soi substrate and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012850A (en) * 1995-12-30 1998-01-16 Hyundai Electron Ind Co Ltd Soi substrate and its manufacture

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