JPS6482620A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6482620A JPS6482620A JP24140887A JP24140887A JPS6482620A JP S6482620 A JPS6482620 A JP S6482620A JP 24140887 A JP24140887 A JP 24140887A JP 24140887 A JP24140887 A JP 24140887A JP S6482620 A JPS6482620 A JP S6482620A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- adhesion
- metallic film
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 229910052904 quartz Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000011229 interlayer Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Abstract
PURPOSE:To prevent the film from peeling off by modifying the surface of the underlying substrate to be contacted with a metallic film so that the adhesion between the metallic film improves, before forming the metallic film, thereby improving the adhesion of the metallic film to be buried into a contact hole and the underlying substrate. CONSTITUTION:A n<+> type diffusion layer 13 is formed by the ion implantation of As in a P-type Si substrate 11 on which an insulating film 12 for element isolation was formed, and thereafter a SiO2 film 14 is deposited as an inter-layer insulating film on the whole substrate surface by a CVD method. And a resist 15 is formed in a predetermined pattern on the SiO2 film 14 using a photolithography technique, and with this as a mask a contact hole 16 for the diffusion layer 13 is formed by a reactive ion etching. By implanting Si ions into the surface of the substrate 11, an amorphous layer 17 is formed in the surface of the Si substrate 11. And, since the surface of the Si substrate 11 has been made amorphous by the ion implantation of Si, a W film 18 formed on the surface of the Si substrate 11 using a selective CVD method is bonded to the Si substrate 11 with good adhesion, whereby the W film 18 is prevented from peeling off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24140887A JPS6482620A (en) | 1987-09-25 | 1987-09-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24140887A JPS6482620A (en) | 1987-09-25 | 1987-09-25 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6482620A true JPS6482620A (en) | 1989-03-28 |
Family
ID=17073843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24140887A Pending JPS6482620A (en) | 1987-09-25 | 1987-09-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6482620A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03154333A (en) * | 1989-11-10 | 1991-07-02 | Toshiba Corp | Manufacture of semiconductor device |
| US5168072A (en) * | 1990-10-12 | 1992-12-01 | Texas Instruments Incorporated | Method of fabricating an high-performance insulated-gate field-effect transistor |
| US5360766A (en) * | 1990-06-05 | 1994-11-01 | Samsung Electronics Co., Ltd. | Method for growing a high-melting-point metal film |
| US5541131A (en) * | 1991-02-01 | 1996-07-30 | Taiwan Semiconductor Manufacturing Co. | Peeling free metal silicide films using ion implantation |
| JPH09134890A (en) * | 1995-11-10 | 1997-05-20 | Nec Corp | Manufacture of semiconductor device |
| US5770517A (en) * | 1997-03-21 | 1998-06-23 | Advanced Micro Devices, Inc. | Semiconductor fabrication employing copper plug formation within a contact area |
| US5804504A (en) * | 1994-10-12 | 1998-09-08 | Hyundai Electronics Industries Co., Ltd. | Method for forming wiring of semiconductor device |
| CN105140107A (en) * | 2015-08-25 | 2015-12-09 | 上海新傲科技股份有限公司 | Preparation method for substrate with charge trap and insulation buried layer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59200418A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6046024A (en) * | 1983-08-24 | 1985-03-12 | Toshiba Corp | Manufacture of semiconductor device |
| JPS60119750A (en) * | 1983-12-02 | 1985-06-27 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS6254469A (en) * | 1985-09-03 | 1987-03-10 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS63296337A (en) * | 1987-05-28 | 1988-12-02 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit |
-
1987
- 1987-09-25 JP JP24140887A patent/JPS6482620A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59200418A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6046024A (en) * | 1983-08-24 | 1985-03-12 | Toshiba Corp | Manufacture of semiconductor device |
| JPS60119750A (en) * | 1983-12-02 | 1985-06-27 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS6254469A (en) * | 1985-09-03 | 1987-03-10 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS63296337A (en) * | 1987-05-28 | 1988-12-02 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03154333A (en) * | 1989-11-10 | 1991-07-02 | Toshiba Corp | Manufacture of semiconductor device |
| US5360766A (en) * | 1990-06-05 | 1994-11-01 | Samsung Electronics Co., Ltd. | Method for growing a high-melting-point metal film |
| US5168072A (en) * | 1990-10-12 | 1992-12-01 | Texas Instruments Incorporated | Method of fabricating an high-performance insulated-gate field-effect transistor |
| US5397909A (en) * | 1990-10-12 | 1995-03-14 | Texas Instruments Incorporated | High-performance insulated-gate field-effect transistor |
| US5541131A (en) * | 1991-02-01 | 1996-07-30 | Taiwan Semiconductor Manufacturing Co. | Peeling free metal silicide films using ion implantation |
| US5804504A (en) * | 1994-10-12 | 1998-09-08 | Hyundai Electronics Industries Co., Ltd. | Method for forming wiring of semiconductor device |
| JPH09134890A (en) * | 1995-11-10 | 1997-05-20 | Nec Corp | Manufacture of semiconductor device |
| US5770517A (en) * | 1997-03-21 | 1998-06-23 | Advanced Micro Devices, Inc. | Semiconductor fabrication employing copper plug formation within a contact area |
| US5955785A (en) * | 1997-03-21 | 1999-09-21 | Advanced Micro Devices, Inc. | Copper-containing plug for connection of semiconductor surface with overlying conductor |
| CN105140107A (en) * | 2015-08-25 | 2015-12-09 | 上海新傲科技股份有限公司 | Preparation method for substrate with charge trap and insulation buried layer |
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