DE3650363D1 - Photoelektrische Umwandlungsvorrichtung und ihr Herstellungsverfahren. - Google Patents

Photoelektrische Umwandlungsvorrichtung und ihr Herstellungsverfahren.

Info

Publication number
DE3650363D1
DE3650363D1 DE3650363T DE3650363T DE3650363D1 DE 3650363 D1 DE3650363 D1 DE 3650363D1 DE 3650363 T DE3650363 T DE 3650363T DE 3650363 T DE3650363 T DE 3650363T DE 3650363 D1 DE3650363 D1 DE 3650363D1
Authority
DE
Germany
Prior art keywords
manufacturing
photoelectric conversion
conversion device
photoelectric
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3650363T
Other languages
English (en)
Other versions
DE3650363T2 (de
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61001006A external-priority patent/JPS62158360A/ja
Priority claimed from JP61001007A external-priority patent/JPS62158361A/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Application granted granted Critical
Publication of DE3650363D1 publication Critical patent/DE3650363D1/de
Publication of DE3650363T2 publication Critical patent/DE3650363T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE3650363T 1986-01-06 1986-12-30 Photoelektrische Umwandlungsvorrichtung und ihr Herstellungsverfahren. Expired - Fee Related DE3650363T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61001006A JPS62158360A (ja) 1986-01-06 1986-01-06 光電変換装置
JP61001007A JPS62158361A (ja) 1986-01-06 1986-01-06 光電変換装置の作成方法

Publications (2)

Publication Number Publication Date
DE3650363D1 true DE3650363D1 (de) 1995-09-14
DE3650363T2 DE3650363T2 (de) 1996-01-25

Family

ID=26334159

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3650363T Expired - Fee Related DE3650363T2 (de) 1986-01-06 1986-12-30 Photoelektrische Umwandlungsvorrichtung und ihr Herstellungsverfahren.

Country Status (5)

Country Link
US (1) US4810661A (de)
EP (1) EP0229397B1 (de)
KR (1) KR900003842B1 (de)
CN (1) CN1008783B (de)
DE (1) DE3650363T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0228712B1 (de) * 1986-01-06 1995-08-09 Sel Semiconductor Energy Laboratory Co., Ltd. Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren
US5317796A (en) * 1989-04-18 1994-06-07 Hunter Robert M Technique for rendering packaging child resistant
FR2737045B1 (fr) * 1995-07-21 1997-08-29 Commissariat Energie Atomique Structure photosensible durcie aux rayonnements electromagnetiques durs et son application aux cameras video
US20060180198A1 (en) * 2005-02-16 2006-08-17 Sharp Kabushiki Kaisha Solar cell, solar cell string and method of manufacturing solar cell string
JP4290747B2 (ja) * 2006-06-23 2009-07-08 シャープ株式会社 光電変換素子およびインターコネクタ付き光電変換素子
CN105043423B (zh) * 2015-07-24 2018-06-05 宋金会 位置传感器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281208A (en) * 1979-02-09 1981-07-28 Sanyo Electric Co., Ltd. Photovoltaic device and method of manufacturing thereof
US4290844A (en) * 1979-02-26 1981-09-22 Carson Alexiou Corporation Focal plane photo-detector mosaic array fabrication
US4316049A (en) * 1979-08-28 1982-02-16 Rca Corporation High voltage series connected tandem junction solar battery
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
JPS5715476A (en) * 1980-07-02 1982-01-26 Canon Inc Photosensor
JPS581878A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 磁気バブルメモリ素子の製造方法
JPS59147469A (ja) * 1983-02-14 1984-08-23 Hitachi Ltd 非晶質シリコン太陽電池
JPS59172274A (ja) * 1983-03-18 1984-09-28 Sanyo Electric Co Ltd 光起電力装置の製造方法

Also Published As

Publication number Publication date
DE3650363T2 (de) 1996-01-25
EP0229397A2 (de) 1987-07-22
KR870007576A (ko) 1987-08-20
EP0229397A3 (en) 1989-01-25
KR900003842B1 (ko) 1990-06-02
US4810661A (en) 1989-03-07
EP0229397B1 (de) 1995-08-09
CN1008783B (zh) 1990-07-11
CN87100057A (zh) 1987-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee