JP4290747B2 - 光電変換素子およびインターコネクタ付き光電変換素子 - Google Patents
光電変換素子およびインターコネクタ付き光電変換素子 Download PDFInfo
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- JP4290747B2 JP4290747B2 JP2007093314A JP2007093314A JP4290747B2 JP 4290747 B2 JP4290747 B2 JP 4290747B2 JP 2007093314 A JP2007093314 A JP 2007093314A JP 2007093314 A JP2007093314 A JP 2007093314A JP 4290747 B2 JP4290747 B2 JP 4290747B2
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- photoelectric conversion
- electrode pad
- interconnector
- conversion element
- conversion layer
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- 238000006243 chemical reaction Methods 0.000 title claims description 210
- 239000010408 film Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
Claims (7)
- 少なくとも1つのpn接合を有する光電変換層と、前記光電変換層の表面に設置された第1電極パッドと、前記光電変換層の前記第1電極パッドが設置された表面とは異なる表面に設置された第2電極パッドと、前記光電変換層の前記第2電極パッドが設置された側の表面とは反対側の表面に設置された第3電極と、を含む、光電変換素子であって、
前記第1電極パッドおよび前記第2電極パッドの少なくとも一方の表面形状は、すべての内角が鈍角である多角形であることを特徴とする、光電変換素子。 - 前記鈍角が120°以上であることを特徴とする、請求項1に記載の光電変換素子。
- 少なくとも1つのpn接合を有する光電変換層と、前記光電変換層の表面に設置された第1電極パッドと、前記光電変換層の前記第1電極パッドが設置された表面とは異なる表面に設置された第2電極パッドと、前記光電変換層の前記第2電極パッドが設置された側の表面とは反対側の表面に設置された第3電極と、を含む、光電変換素子であって、
前記第1電極パッドおよび前記第2電極パッドの少なくとも一方の表面形状は、角を有しない形状であることを特徴とする、光電変換素子。 - 前記光電変換層の厚みが50μm以下であることを特徴とする、請求項1から3のいずれかに記載の光電変換素子。
- 請求項1から4のいずれかに記載の光電変換素子と、前記光電変換素子の前記第1電極パッドおよび前記第2電極パッドの少なくとも一方の電極パッドに接続されたインターコネクタと、を備えた、インターコネクタ付き光電変換素子であって、前記インターコネクタの前記電極パッド側の先端部の表面形状は、角がすべて鈍角となっている形状または角を有しない形状となっていることを特徴とする、インターコネクタ付き光電変換素子。
- 前記鈍角が120°以上であることを特徴とする、請求項5に記載のインターコネクタ付き光電変換素子。
- 前記光電変換素子の前記光電変換層の厚みが50μm以下であることを特徴とする、請求項5または6に記載のインターコネクタ付き光電変換素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007093314A JP4290747B2 (ja) | 2006-06-23 | 2007-03-30 | 光電変換素子およびインターコネクタ付き光電変換素子 |
US11/808,123 US8884153B2 (en) | 2006-06-23 | 2007-06-06 | Photoelectric conversion element and interconnector-equipped photoelectric conversion element |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006173746 | 2006-06-23 | ||
JP2007093314A JP4290747B2 (ja) | 2006-06-23 | 2007-03-30 | 光電変換素子およびインターコネクタ付き光電変換素子 |
Related Child Applications (1)
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---|---|---|---|
JP2008209281A Division JP4999803B2 (ja) | 2006-06-23 | 2008-08-15 | インターコネクタ付き光電変換素子 |
Publications (2)
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JP2008028366A JP2008028366A (ja) | 2008-02-07 |
JP4290747B2 true JP4290747B2 (ja) | 2009-07-08 |
Family
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JP2007093314A Expired - Fee Related JP4290747B2 (ja) | 2006-06-23 | 2007-03-30 | 光電変換素子およびインターコネクタ付き光電変換素子 |
Country Status (2)
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US (1) | US8884153B2 (ja) |
JP (1) | JP4290747B2 (ja) |
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US20080041437A1 (en) | 2008-02-21 |
US8884153B2 (en) | 2014-11-11 |
JP2008028366A (ja) | 2008-02-07 |
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