WO2012053471A1 - 太陽電池セル - Google Patents
太陽電池セル Download PDFInfo
- Publication number
- WO2012053471A1 WO2012053471A1 PCT/JP2011/073805 JP2011073805W WO2012053471A1 WO 2012053471 A1 WO2012053471 A1 WO 2012053471A1 JP 2011073805 W JP2011073805 W JP 2011073805W WO 2012053471 A1 WO2012053471 A1 WO 2012053471A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoelectric conversion
- solar cell
- conversion layer
- solar battery
- electrode pad
- Prior art date
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 24
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 239000007769 metal material Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 84
- 210000005056 cell body Anatomy 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 8
- 239000010408 film Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a structure of a connection portion where an interconnector is connected to a solar battery cell, particularly a solar battery cell.
- Silicon crystal solar cells using a silicon substrate and having a pn junction formed on the silicon substrate are currently mainstream.
- a solar cell that can obtain higher photoelectric conversion efficiency than a silicon crystal solar cell there is a solar cell that uses a compound semiconductor having a direct transition type and a large light absorption coefficient.
- Many of compound semiconductor solar cells using compound semiconductors that are currently developed have a multi-junction structure having a plurality of photoelectric conversion layers that are pn junctions, and each photoelectric conversion layer has a different forbidden band width. Therefore, since a sunlight spectrum can be used effectively, it is possible to obtain a higher photoelectric conversion efficiency than a compound semiconductor solar battery having one photoelectric conversion layer.
- a solar cell used for an artificial satellite or the like has high photoelectric conversion efficiency and needs to be lightweight. Then, what formed the compound semiconductor solar cell which has a multijunction structure on the resin film is examined.
- FIG. 10 shows a solar cell string formed by electrically connecting solar cells using compound semiconductors described in International Publication No. 99/62125 (Patent Document 1).
- the solar cells 152, 158 have corresponding integral bypass diodes 154, 160, respectively, and form a solar cell string by the interconnect.
- the first interconnect 164 connects the front contact 155 formed on the cascade cell 156 having the plurality of photoelectric conversion layers of the solar cell 152 and the front contact 159 of the solar cell 158, so that the solar cell 152
- the solar cell 158 is electrically connected.
- the second interconnect 165 connects the front contact 155 of the solar cell 152 and the back contact 163 of the solar cell 158, the solar cell 152 and the solar cell 158 are electrically connected.
- Reference numerals 153 and 161 denote front contacts, 157 denotes a back contact, and 162 denotes a cascade cell having a plurality of photoelectric conversion layers.
- the photoelectric conversion layer is epitaxially grown on the semiconductor substrate for lightening and cost reduction, and then the semiconductor substrate and the epitaxial growth are performed. Development has been made to form a thin film by separating it from the photoelectric conversion layer.
- a solar cell string shown in International Publication No. 99/62125 Patent Document 1
- the solar cell is arranged on a surface plate with the front contact formed side down, and the back contact is interconnected (“interconnect” in this application).
- interconnect in this application.
- Connector Corresponding to “Connector”. The same shall apply hereinafter.
- the photoelectric conversion layer since the photoelectric conversion layer is thinned, the solar cell may be cracked or cracked due to surface irregularities caused by the front contact.
- the present invention has been made in view of the above circumstances, and an object of the present invention is to increase the strength of a connection location for connecting an interconnector in a solar battery cell.
- the solar cell of the present invention includes a photoelectric conversion layer, an electrode pad formed on the photoelectric conversion layer, an interconnector connected to the electrode pad, a metal thin film formed under the photoelectric conversion layer, and a photoelectric conversion
- the layer and the metal thin film are separated from each other, and have a relay terminal connected to the metal thin film by a connection conductor, and a connection pad formed on the relay terminal.
- the relay terminal is fixed to the glass formed on the light receiving surface side with a resin.
- the photoelectric conversion layer, interconnector, electrode pad, and metal thin film are more preferably fixed to glass with resin.
- a plurality of relay terminals are formed and at least one of them is formed of a metal material.
- a plurality of relay terminals are formed and at least one is a bypass diode.
- connection pad is formed on the surface opposite to the glass forming surface side of the relay terminal.
- the photoelectric conversion layer is formed by epitaxial growth.
- a relay terminal is provided at a location that is a connection location of an interconnector, and the strength of the connection location of the interconnector is increased by separating the relay terminal and the photoelectric conversion layer. Cracks or cracks that may occur in the cell can be suppressed.
- FIG. 2 is a schematic cross-sectional configuration diagram showing a cross section taken along line AA ′ shown in FIG. 1.
- FIG. 2 is a schematic cross-sectional configuration diagram showing a cross section of BB ′ shown in FIG. 1. It is the typical figure seen from the incident light side of another example of the photovoltaic cell of the present invention.
- FIG. 5 is a schematic cross-sectional configuration diagram illustrating a cross section taken along a line CC ′ illustrated in FIG. 4.
- FIG. 5 is a schematic cross-sectional configuration diagram illustrating a cross section of DD ′ illustrated in FIG. 4.
- FIG. 1 It is a schematic diagram of another example showing the bypass diode of the present invention. It is the typical figure seen from the incident light side of further another example of the photovoltaic cell of this invention. It is a typical figure of an example of the solar cell string of a prior art.
- FIG. 1 is a diagram showing an example of the solar battery cell of the present invention viewed from the incident light side of sunlight through the glass.
- an n-type electrode pad 10 and a p-type electrode pad 12 are formed.
- a comb-shaped n-type electrode 4 and an interconnector 5 are connected to the n-type electrode pad 10.
- the p-type electrode pad 12 is connected to the relay terminal 13 via the metal ribbon 11.
- Reference numeral 25 is a solar cell body.
- the interconnector is formed of a metal material that electrically connects the solar battery cells when the solar battery string is formed.
- the metal ribbon which is a connection conductor is formed with the metal material which electrically connects a relay terminal and a photovoltaic cell main body.
- FIG. 2 is a view showing a cross section taken along the line AA ′ passing through the n-type electrode pad 10 and the relay terminal 13 shown in FIG.
- the photoelectric conversion layer 2 is a compound semiconductor layer formed by epitaxial growth on a semiconductor substrate and then separated from the semiconductor substrate.
- the photoelectric conversion layer 2 has at least one pn junction, the incident light side is an n-type semiconductor layer, and the back surface side opposite to the incident light side is a p-type semiconductor layer.
- An n-type electrode 4 (not shown in the cross section of FIG.
- FIG. 1 A resin film 9 that serves as a base material is formed under the metal thin film 3.
- region on the resin film 9 be the photovoltaic cell main body 25.
- the interconnector 5 is electrically connected to the n-type electrode pad 10 in advance by parallel gap welding or the like.
- a solar battery string is formed by connecting the interconnector 5 to a connection pad of an adjacent solar battery cell.
- the distance between the solar cells can be shortened, and the solar cell string can be made compact.
- the processing capacity of the production line can be increased.
- the solar battery cell 1 has a relay terminal 13 that is separated from the solar battery body 25, and the relay terminal 13 is formed of a metal material.
- the relay terminal 13 serves as a connection terminal on the p-type side, and is electrically connected to the p-type electrode pad 12 and the metal ribbon 11 via the electrode pad 21.
- the metal ribbon 11 may be directly connected to the relay terminal 13.
- the solar cell body 25 and the relay terminal 13 are sealed with resin 7 as separate elements, and are covered and fixed with an integral glass 8.
- the relay terminal 13 is fixed to the glass 8 so that it has higher strength as a connection point.
- the portion where the interconnector 5 is also welded to the n-type electrode pad 10 is sealed with resin and is fixed to the glass 8, so that it has strength.
- Reference numeral 51 is an interconnector of an adjacent solar battery cell.
- connection pad 14 for connecting the interconnector is formed on the side opposite to the glass 8 forming side of the relay terminal 13.
- the interconnector is connected by placing the glass 8 surface of the solar battery cell 1 on a surface plate. Since there is no unevenness on the surface of the glass 8 that affects the connection, cracks, cracks, or the like generated in the solar cell body 25 at the time of connection can be suppressed.
- FIG. 3 is a view showing a cross section of BB ′ shown in FIG. 1 where the relay terminal 13 appears on both sides.
- the p-type electrode pad 12 is formed on the metal thin film 3 and is connected to the relay terminal 13 by the metal ribbon 11. It is more preferable that a plurality of relay terminals 13 are formed in the solar battery cell 1 from the viewpoint of reliability.
- connection between the solar battery cell body 25 and the relay terminal 13 by the metal ribbon 11 is performed before fixing the glass 8 by resin sealing.
- the connection of the metal ribbon 11 on the solar cell body 25 side is performed by placing the solar cell body 25 on a surface plate. In that case, since there is no unevenness affecting the connection on the back surface side of the resin film 9, it is possible to suppress cracks, cracks, or the like generated in the solar cell body 25 at the time of connection.
- the interconnector 5 is connected to the solar cell body 25, the solar cell body 25 is similarly placed on a surface plate before being fixed to the glass. Since there is no unevenness affecting the crack, cracks or cracks generated in the solar cell body 25 at the time of connection can be suppressed.
- FIG. 4 is a diagram illustrating another example of the solar battery cell of the present invention viewed from the incident light side of sunlight through the glass.
- Solar cell 41 is different from solar cell 1 of Example 1 in that one of the relay terminals is bypass diode 17, and the other structure is the same as solar cell 1.
- the p region of the bypass diode 17 is connected to the n-type electrode pad 16 through the metal ribbon 15, and the n region of the bypass diode 17 is connected to the p-type electrode pad 12 through the metal ribbon 20.
- Reference numeral 26 denotes a solar battery cell body.
- FIG. 5A and 5B are enlarged views of the bypass diode 17 of FIG. 4, in which FIG. 5A is a top view and FIG. A p region 46 and an n + region 47 are formed on the n-type semiconductor substrate 45 of the bypass diode 17.
- the n + region 47 has an n type impurity concentration higher than that of the n type semiconductor substrate 45.
- the electrode pad 48 formed on the p region 46 is electrically connected to the n-type electrode pad 16 by the metal ribbon 15, and the electrode pad 49 formed on the n + region 47 is electrically connected to the p-type electrode pad 12 and the metal.
- the ribbon 20 is electrically connected.
- a connection pad 18 is formed on the back side of the bypass diode 17.
- the bypass diode 17 also serves as a relay terminal as a connection terminal on the p-type side. All of the relay terminals may be bypass diodes having connection pads.
- FIG. 6 is a view showing a cross section taken along the line CC ′ passing through the n-type electrode pad 10 and the bypass diode 17 shown in FIG.
- the n-type electrode pad 16 is formed on the incident light side of the photoelectric conversion layer 2.
- the bypass diode 17 and the solar battery cell body 26 are sealed with resin 7 as separate elements, and are covered and fixed with an integral glass 8.
- Bypass diode 17 is fixed to glass 8, and has more strength as a connection point.
- Reference numeral 51 is an interconnector of an adjacent solar battery cell.
- FIG. 7 is a diagram showing a cross section of DD ′ shown in FIG. 4 where the bypass diode 17 and the relay terminal appear. Since a semiconductor material is used for the bypass diode 17, the strength of the connection portion can be further increased, and when the interconnector is connected to the bypass diode 17, it is possible to suppress the occurrence of cracks, cracks, etc. in the solar cell body 26. .
- connection pad 18 which is one of the p-type side connection pads of the solar battery cell 41 is formed.
- the bypass diode 17 is sealed with resin and fixed to the glass 8.
- the interconnector is connected by placing the glass 8 surface of the solar battery cell 41 on a surface plate. Since there is no unevenness on the surface of the glass 8 that affects the connection, cracks, cracks, or the like generated in the solar cell body 26 at the time of connection can be suppressed.
- bypass diode 17 By integrating the bypass diode 17 with the solar battery cell 41, the number of connection points can be reduced and the processing capacity of the production line can be increased.
- FIG. 8 is a diagram illustrating another example of the bypass diode.
- (A) is a top view and
- (b) is a view showing a cross section taken along line FF ′ shown in (a).
- the solar battery cell using the bypass diode 54 shown in FIG. 8 is the same as the solar battery cell 41 except that the bypass diode 17 of the solar battery cell 41 shown in FIG. is there.
- bypass diode 54 a p region 56 and an n + region 57 are formed on an n-type semiconductor substrate 55.
- the electrode pad 58 formed on the p region 56 is electrically connected to the n-type electrode pad 16 by the metal ribbon 15, and the electrode pad 59 formed on the n + region 57 is electrically connected to the p-type electrode pad 12 and the metal.
- the ribbon 23 is electrically connected.
- a connection pad 18 is formed on the back surface side of the bypass diode 54.
- the bypass diode 54 also serves as a relay terminal as a connection terminal on the p-type side. All of the relay terminals may be bypass diodes having connection pads.
- FIG. 9 is a diagram showing still another example of the solar battery cell of the present invention viewed from the incident light side of sunlight through the glass.
- Solar cell 31 is different from solar cell 1 of Example 1 in that a bypass diode 35 is formed, and the other structure is the same as that of solar cell 1.
- the bypass diode 35, the solar battery cell body 25, and the relay terminal 13 are covered with an integrated glass 8 as another element and sealed with resin.
- the bypass diode 35, the solar cell body 25, and the relay terminal 13 are each fixed to glass.
- the wiring of the bypass diode 35 is omitted, it is electrically connected to the photoelectric conversion layer formed in the solar cell body 25 by a conductive material. Further, the arrangement, size, and shape of the bypass diode 35 shown in FIG. 9 are examples.
- Example 3 by integrating the bypass diode 35 with the solar battery cell 31, the number of connection points can be reduced and the processing capacity of the production line can be increased.
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Abstract
Description
図2は、図1で示した、n型電極パッド10と中継端子13を通る、A-A′の断面を表す図である。光電変換層2は、半導体基板上にエピタキシャル成長により形成され、その後、半導体基板から分離された化合物半導体層である。光電変換層2は、少なくとも1つのpn接合を有し、入射光側がn型半導体層であり、入射光側と反対側の面である裏面側がp型半導体層である。光電変換層2の入射光側にn型電極4(図2の断面には表れず)、n型電極パッド10が形成され、裏面側である下に金属薄膜3が形成されている。金属薄膜3は光電変換層2のp電極取出しとして蒸着により形成されている。また、金属薄膜3の下には、基材の役割を果たす樹脂フィルム9が形成されている。ここで、樹脂フィルム9上の領域を太陽電池セル本体25とする。
Claims (7)
- 光電変換層(2)と、
前記光電変換層(2)上に形成された電極パッド(10)と、
前記電極パッド(10)に接続されたインターコネクタ(5)と、
前記光電変換層(2)の下に形成された金属薄膜(3)と、
前記光電変換層(2)および前記金属薄膜(3)とは離間しており、前記金属薄膜(3)と接続導体(11,15,20)で接続された中継端子(13,17)と、
前記中継端子(13,17)に形成された接続パッド(14,18)とを有する太陽電池セル(1,41)。 - 前記中継端子(13,17)は、受光面側に形成されたガラス(8)に樹脂(7)で固定されている請求項1に記載の太陽電池セル(1,41)。
- 前記光電変換層(2)、前記インターコネクタ(5)、前記電極パッド(14,18)および前記金属薄膜(3)は、前記ガラス(8)に樹脂(7)で固定されている請求項2に記載の太陽電池セル(1,41)。
- 前記中継端子(13,17)は、複数形成され、少なくとも1つが金属材料で形成されている請求項1~3のいずれかに記載の太陽電池セル(1,41)。
- 前記中継端子(13,17)は、複数形成され、少なくとも1つがバイパスダイオードである請求項1~3のいずれかに記載の太陽電池セル(1,41)。
- 前記接続パッド(14,18)は、前記中継端子(13,17)の前記ガラス(8)形成面側と反対側の面に形成されている請求項2~5のいずれかに記載の太陽電池セル(1,41)。
- 前記光電変換層(2)がエピタキシャル成長にて形成されている請求項1~6のいずれかに記載の太陽電池セル(1,41)。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2012539712A JP5639657B2 (ja) | 2010-10-22 | 2011-10-17 | 太陽電池セル |
EP11834310.2A EP2631955B1 (en) | 2010-10-22 | 2011-10-17 | Solar battery cell |
US13/880,804 US9236503B2 (en) | 2010-10-22 | 2011-10-17 | Solar cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2010236991 | 2010-10-22 | ||
JP2010-236991 | 2010-10-22 |
Publications (1)
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WO2012053471A1 true WO2012053471A1 (ja) | 2012-04-26 |
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PCT/JP2011/073805 WO2012053471A1 (ja) | 2010-10-22 | 2011-10-17 | 太陽電池セル |
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US (1) | US9236503B2 (ja) |
EP (1) | EP2631955B1 (ja) |
JP (1) | JP5639657B2 (ja) |
TW (1) | TWI447920B (ja) |
WO (1) | WO2012053471A1 (ja) |
Cited By (1)
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KR20190021277A (ko) * | 2019-01-10 | 2019-03-05 | 한국기계연구원 | 에너지 변환 장치 및 그 제조 방법 |
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US11462652B2 (en) * | 2016-09-27 | 2022-10-04 | Lg Electronics Inc. | Solar cell and solar cell panel including the same |
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- 2011-10-17 US US13/880,804 patent/US9236503B2/en not_active Expired - Fee Related
- 2011-10-17 WO PCT/JP2011/073805 patent/WO2012053471A1/ja active Application Filing
- 2011-10-17 JP JP2012539712A patent/JP5639657B2/ja active Active
- 2011-10-21 TW TW100138388A patent/TWI447920B/zh not_active IP Right Cessation
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KR20190021277A (ko) * | 2019-01-10 | 2019-03-05 | 한국기계연구원 | 에너지 변환 장치 및 그 제조 방법 |
KR101976131B1 (ko) | 2019-01-10 | 2019-05-07 | 한국기계연구원 | 에너지 변환 장치 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
TW201227985A (en) | 2012-07-01 |
EP2631955A1 (en) | 2013-08-28 |
US20130206228A1 (en) | 2013-08-15 |
EP2631955B1 (en) | 2018-03-28 |
EP2631955A4 (en) | 2014-04-16 |
US9236503B2 (en) | 2016-01-12 |
JPWO2012053471A1 (ja) | 2014-02-24 |
JP5639657B2 (ja) | 2014-12-10 |
TWI447920B (zh) | 2014-08-01 |
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