JP5121181B2 - 光起電力素子及びその製造方法 - Google Patents
光起電力素子及びその製造方法 Download PDFInfo
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- JP5121181B2 JP5121181B2 JP2006205833A JP2006205833A JP5121181B2 JP 5121181 B2 JP5121181 B2 JP 5121181B2 JP 2006205833 A JP2006205833 A JP 2006205833A JP 2006205833 A JP2006205833 A JP 2006205833A JP 5121181 B2 JP5121181 B2 JP 5121181B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910000679 solder Inorganic materials 0.000 claims abstract description 104
- 229920005989 resin Polymers 0.000 claims abstract description 92
- 239000011347 resin Substances 0.000 claims abstract description 92
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 81
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 170
- 239000011248 coating agent Substances 0.000 claims description 46
- 238000000576 coating method Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 15
- 239000011247 coating layer Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 63
- 229910021417 amorphous silicon Inorganic materials 0.000 description 22
- 230000008018 melting Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 229910020830 Sn-Bi Inorganic materials 0.000 description 6
- 229910018728 Sn—Bi Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000001846 repelling effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
2…i型非晶質シリコン層
3…p型非晶質シリコン層
4…透光性導電膜
5…集電極
5a…フィンガー電極
5b…バスバー電極
6…i型非晶質シリコン層
7…n型非晶質シリコン層
8…透光性導電膜
9…集電極
9b…バスバー電極
10…樹脂コーティング膜
11…光起電力素子
12…タブ電極
13…充填材
14…表面保護材
15…PETフィルム
16…アルミニウム箔
23…集電極被覆層
23a…熱硬化性樹脂層
23b…はんだ層
25…集電極被覆層
25a…熱硬化性樹脂層
25b…はんだ層
Claims (11)
- 光電変換層と、前記光電変換層の少なくとも一方の表面上に設けられる集電極とを備える光起電力素子であって、
前記一方の表面上に設けられた集電極の表面上を被覆する集電極被覆層が設けられており、外部の電極と電気的に接続するためのタブ電極が前記集電極被覆層を介して前記集電極の上面の上に設けられており、前記タブ電極と前記集電極との間の前記集電極被覆層の部分が熱硬化された導電性ペースト層から構成されており、前記集電極の側面を覆う前記集電極被覆層の部分が熱硬化性樹脂層から構成され、前記導電性ペースト層と前記熱硬化性樹脂層とは一体的に形成されるとともに、前記熱硬化性樹脂層は前記光電変換層の表面上と前記タブ電極とに接触することを特徴とする光起電力素子。 - 前記光電変換層の上にコーティング膜が設けられており、前記熱硬化性樹脂層が前記集電極と前記コーティング膜の端部との間に配置されていることを特徴とする請求項1に記載の光起電力素子。
- 前記光電変換層の上に透光性導電膜が設けられており、前記透光性導電膜の上に前記コーティング膜及び前記集電極が設けられていることを特徴とする請求項2に記載の光起電力素子。
- 前記コーティング膜が樹脂コーティング膜であることを特徴とする請求項2または3に記載の光起電力素子。
- 前記タブ電極が、前記集電極の側面の外側に位置する前記熱硬化性樹脂層を覆う幅を有することを特徴とする請求項1〜4のいずれか1項に記載の光起電力素子。
- 前記集電極がバスバー電極であることを特徴とする請求項1〜5のいずれか1項に記載の光起電力素子。
- 前記はんだ層がSnBi合金から形成されていることを特徴とする請求項1〜6のいずれか1項に記載の光起電力素子。
- 請求項1〜7のいずれか1項に記載の光起電力素子を製造する方法であって、前記導電性ペースト層ははんだ層であって、
前記集電極の上に熱硬化型導電性はんだペースト塗布し、はんだペースト層を形成する工程と、
前記はんだペースト層の上に前記タブ電極を配置する工程と、
前記タブ電極を前記はんだペースト層の上に配置した状態で、前記はんだペースト層を加熱することにより、前記はんだペースト層に含有されたはんだ成分を融解し前記タブ電極と前記集電極の間に前記はんだ層を形成するとともに、前記はんだペースト層に含有された熱硬化性樹脂からなる前記熱硬化性樹脂層を前記集電極の側面上の領域に形成し、前記はんだ層と前記熱硬化性樹脂層から構成される前記集電極被覆層を前記集電極の表面上に形成する工程とを備えることを特徴とする光起電力素子の製造方法。 - 前記光電変換層の上に前記コーティング膜を形成する工程をさらに備え、前記はんだペースト層を加熱して前記熱硬化性樹脂層を形成する際、前記コーティング膜によって前記熱硬化性樹脂の濡れ広がりを防止し、前記熱硬化性樹脂層が前記集電極と前記コーティング膜の端部との間に配置されることを特徴とする請求項8に記載の光起電力素子の製造方法。
- 前記光電変換層の上に前記透光性導電膜を形成する工程をさらに備え、前記コーティング膜を形成する工程が、前記透光性導電膜の上に前記コーティング膜を形成する工程であることを特徴とする請求項9に記載の光起電力素子の製造方法。
- 請求項1〜7のいずれか1項に記載の複数の前記光起電力素子が前記タブ電極によって互いに接続されて構成されていることを特徴とする太陽電池モジュール。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006205833A JP5121181B2 (ja) | 2006-07-28 | 2006-07-28 | 光起電力素子及びその製造方法 |
AT07014439T ATE496397T1 (de) | 2006-07-28 | 2007-07-23 | Photovoltaisches modul and herstellungsverfahren dafür |
EP07014439A EP1883117B1 (en) | 2006-07-28 | 2007-07-23 | Photovoltaic module and fabrication method thereof |
ES07014439T ES2360193T3 (es) | 2006-07-28 | 2007-07-23 | Módulo fotovoltaico y método de fabricación del mismo. |
DE602007012023T DE602007012023D1 (de) | 2006-07-28 | 2007-07-23 | Photovoltaisches Modul and Herstellungsverfahren dafür |
US11/829,349 US20080023069A1 (en) | 2006-07-28 | 2007-07-27 | Photovoltaic element and fabrication method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006205833A JP5121181B2 (ja) | 2006-07-28 | 2006-07-28 | 光起電力素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008034592A JP2008034592A (ja) | 2008-02-14 |
JP5121181B2 true JP5121181B2 (ja) | 2013-01-16 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006205833A Expired - Fee Related JP5121181B2 (ja) | 2006-07-28 | 2006-07-28 | 光起電力素子及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080023069A1 (ja) |
EP (1) | EP1883117B1 (ja) |
JP (1) | JP5121181B2 (ja) |
AT (1) | ATE496397T1 (ja) |
DE (1) | DE602007012023D1 (ja) |
ES (1) | ES2360193T3 (ja) |
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US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
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US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
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2007
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EP1883117A3 (en) | 2008-03-12 |
DE602007012023D1 (de) | 2011-03-03 |
ES2360193T3 (es) | 2011-06-01 |
US20080023069A1 (en) | 2008-01-31 |
EP1883117B1 (en) | 2011-01-19 |
JP2008034592A (ja) | 2008-02-14 |
ATE496397T1 (de) | 2011-02-15 |
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