JPWO2012053471A1 - 太陽電池セル - Google Patents
太陽電池セル Download PDFInfo
- Publication number
- JPWO2012053471A1 JPWO2012053471A1 JP2012539712A JP2012539712A JPWO2012053471A1 JP WO2012053471 A1 JPWO2012053471 A1 JP WO2012053471A1 JP 2012539712 A JP2012539712 A JP 2012539712A JP 2012539712 A JP2012539712 A JP 2012539712A JP WO2012053471 A1 JPWO2012053471 A1 JP WO2012053471A1
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- Prior art keywords
- solar cell
- photoelectric conversion
- conversion layer
- electrode pad
- connection
- Prior art date
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 24
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- 239000007769 metal material Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 84
- 210000005056 cell body Anatomy 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 8
- 239000010408 film Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
図2は、図1で示した、n型電極パッド10と中継端子13を通る、A−A′の断面を表す図である。光電変換層2は、半導体基板上にエピタキシャル成長により形成され、その後、半導体基板から分離された化合物半導体層である。光電変換層2は、少なくとも1つのpn接合を有し、入射光側がn型半導体層であり、入射光側と反対側の面である裏面側がp型半導体層である。光電変換層2の入射光側にn型電極4(図2の断面には表れず)、n型電極パッド10が形成され、裏面側である下に金属薄膜3が形成されている。金属薄膜3は光電変換層2のp電極取出しとして蒸着により形成されている。また、金属薄膜3の下には、基材の役割を果たす樹脂フィルム9が形成されている。ここで、樹脂フィルム9上の領域を太陽電池セル本体25とする。
Claims (7)
- 光電変換層(2)と、
前記光電変換層(2)上に形成された電極パッド(10)と、
前記電極パッド(10)に接続されたインターコネクタ(5)と、
前記光電変換層(2)の下に形成された金属薄膜(3)と、
前記光電変換層(2)および前記金属薄膜(3)とは離間しており、前記金属薄膜(3)と接続導体(11,15,20)で接続された中継端子(13,17)と、
前記中継端子(13,17)に形成された接続パッド(14,18)とを有する太陽電池セル(1,41)。 - 前記中継端子(13,17)は、受光面側に形成されたガラス(8)に樹脂(7)で固定されている請求項1に記載の太陽電池セル(1,41)。
- 前記光電変換層(2)、前記インターコネクタ(5)、前記電極パッド(14,18)および前記金属薄膜(3)は、前記ガラス(8)に樹脂(7)で固定されている請求項2に記載の太陽電池セル(1,41)。
- 前記中継端子(13,17)は、複数形成され、少なくとも1つが金属材料で形成されている請求項1〜3のいずれかに記載の太陽電池セル(1,41)。
- 前記中継端子(13,17)は、複数形成され、少なくとも1つがバイパスダイオードである請求項1〜3のいずれかに記載の太陽電池セル(1,41)。
- 前記接続パッド(14,18)は、前記中継端子(13,17)の前記ガラス(8)形成面側と反対側の面に形成されている請求項2〜5のいずれかに記載の太陽電池セル(1,41)。
- 前記光電変換層(2)がエピタキシャル成長にて形成されている請求項1〜6のいずれかに記載の太陽電池セル(1,41)。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012539712A JP5639657B2 (ja) | 2010-10-22 | 2011-10-17 | 太陽電池セル |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010236991 | 2010-10-22 | ||
JP2010236991 | 2010-10-22 | ||
JP2012539712A JP5639657B2 (ja) | 2010-10-22 | 2011-10-17 | 太陽電池セル |
PCT/JP2011/073805 WO2012053471A1 (ja) | 2010-10-22 | 2011-10-17 | 太陽電池セル |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012053471A1 true JPWO2012053471A1 (ja) | 2014-02-24 |
JP5639657B2 JP5639657B2 (ja) | 2014-12-10 |
Family
ID=45975183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012539712A Active JP5639657B2 (ja) | 2010-10-22 | 2011-10-17 | 太陽電池セル |
Country Status (5)
Country | Link |
---|---|
US (1) | US9236503B2 (ja) |
EP (1) | EP2631955B1 (ja) |
JP (1) | JP5639657B2 (ja) |
TW (1) | TWI447920B (ja) |
WO (1) | WO2012053471A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11462652B2 (en) * | 2016-09-27 | 2022-10-04 | Lg Electronics Inc. | Solar cell and solar cell panel including the same |
KR101976131B1 (ko) * | 2019-01-10 | 2019-05-07 | 한국기계연구원 | 에너지 변환 장치 및 그 제조 방법 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0982865A (ja) | 1995-09-08 | 1997-03-28 | Canon Inc | リード端子付きチップダイオード及びこれを用いた太陽電池モジュール |
JP3658160B2 (ja) | 1997-11-17 | 2005-06-08 | キヤノン株式会社 | モールドレス半導体装置 |
WO1999062125A1 (en) | 1998-05-28 | 1999-12-02 | Tecstar Power Systems, Inc. | Solar cell having an integral monolithically grown bypass diode |
GB2341273A (en) * | 1998-09-04 | 2000-03-08 | Eev Ltd | Solar cell arrangements |
DE19916742C1 (de) * | 1999-04-13 | 2000-08-24 | Angew Solarenergie Ase Gmbh | Schaltungsanordnung zur Stromerzeugung mit Solarzellen |
JP4153785B2 (ja) | 2002-12-19 | 2008-09-24 | 京セラ株式会社 | 太陽電池モジュール |
JP2004319812A (ja) * | 2003-04-17 | 2004-11-11 | Canon Inc | 電力変換器付き太陽電池モジュール |
JP2005129773A (ja) * | 2003-10-24 | 2005-05-19 | Kyocera Corp | 太陽電池モジュールおよび太陽電池素子の接続用配線 |
JP4558461B2 (ja) | 2004-11-29 | 2010-10-06 | シャープ株式会社 | 太陽電池およびその製造方法 |
JP4290747B2 (ja) | 2006-06-23 | 2009-07-08 | シャープ株式会社 | 光電変換素子およびインターコネクタ付き光電変換素子 |
JP5121181B2 (ja) * | 2006-07-28 | 2013-01-16 | 三洋電機株式会社 | 光起電力素子及びその製造方法 |
DE102007011403A1 (de) * | 2007-03-08 | 2008-09-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Frontseitig serienverschaltetes Solarmodul |
JP5820976B2 (ja) | 2008-07-31 | 2015-11-24 | パナソニックIpマネジメント株式会社 | 太陽電池モジュールの製造方法 |
DK2359401T3 (en) * | 2008-11-20 | 2015-08-31 | Saphire Solar Technologies Aps | Solar module with integrated electronic devices and the related process for their preparation |
-
2011
- 2011-10-17 US US13/880,804 patent/US9236503B2/en not_active Expired - Fee Related
- 2011-10-17 EP EP11834310.2A patent/EP2631955B1/en not_active Not-in-force
- 2011-10-17 WO PCT/JP2011/073805 patent/WO2012053471A1/ja active Application Filing
- 2011-10-17 JP JP2012539712A patent/JP5639657B2/ja active Active
- 2011-10-21 TW TW100138388A patent/TWI447920B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20130206228A1 (en) | 2013-08-15 |
JP5639657B2 (ja) | 2014-12-10 |
EP2631955A4 (en) | 2014-04-16 |
TWI447920B (zh) | 2014-08-01 |
US9236503B2 (en) | 2016-01-12 |
WO2012053471A1 (ja) | 2012-04-26 |
EP2631955A1 (en) | 2013-08-28 |
EP2631955B1 (en) | 2018-03-28 |
TW201227985A (en) | 2012-07-01 |
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