DE69941667D1 - Solarzelle mit einer integrierten monolitisch gewachsenen Bypassdiode - Google Patents

Solarzelle mit einer integrierten monolitisch gewachsenen Bypassdiode

Info

Publication number
DE69941667D1
DE69941667D1 DE69941667T DE69941667T DE69941667D1 DE 69941667 D1 DE69941667 D1 DE 69941667D1 DE 69941667 T DE69941667 T DE 69941667T DE 69941667 T DE69941667 T DE 69941667T DE 69941667 D1 DE69941667 D1 DE 69941667D1
Authority
DE
Germany
Prior art keywords
solar cell
bypass diode
integrated monolithically
contact
monolithically grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69941667T
Other languages
English (en)
Inventor
Frank Ho
Milton Y Yeh
Chaw-Long Chu
Peter A Iles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solaero Solar Power Inc
Original Assignee
Emcore Solar Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Solar Power Inc filed Critical Emcore Solar Power Inc
Priority claimed from PCT/US1999/011171 external-priority patent/WO1999062125A1/en
Application granted granted Critical
Publication of DE69941667D1 publication Critical patent/DE69941667D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Development (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Energy (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE69941667T 1998-05-28 1999-05-19 Solarzelle mit einer integrierten monolitisch gewachsenen Bypassdiode Expired - Lifetime DE69941667D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8720698P 1998-05-28 1998-05-28
PCT/US1999/011171 WO1999062125A1 (en) 1998-05-28 1999-05-19 Solar cell having an integral monolithically grown bypass diode

Publications (1)

Publication Number Publication Date
DE69941667D1 true DE69941667D1 (de) 2010-01-07

Family

ID=41396992

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69941667T Expired - Lifetime DE69941667D1 (de) 1998-05-28 1999-05-19 Solarzelle mit einer integrierten monolitisch gewachsenen Bypassdiode

Country Status (5)

Country Link
EP (2) EP1443566B1 (de)
JP (1) JP2002517098A (de)
AT (1) ATE450055T1 (de)
AU (1) AU4193899A (de)
DE (1) DE69941667D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE411619T1 (de) * 1998-05-28 2008-10-15 Emcore Corp Solarzelle mit einer integrierten monolithisch gewachsenen bypassdiode
US6680432B2 (en) 2001-10-24 2004-01-20 Emcore Corporation Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
US6864414B2 (en) 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
DE102004023856B4 (de) * 2004-05-12 2006-07-13 Rwe Space Solar Power Gmbh Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode
JP4849786B2 (ja) * 2004-08-30 2012-01-11 シャープ株式会社 多接合型化合物太陽電池およびその製造方法
JP4868746B2 (ja) * 2005-02-16 2012-02-01 シャープ株式会社 薄膜化合物太陽電池およびその製造方法
JP5341297B2 (ja) * 2005-11-17 2013-11-13 シャープ株式会社 化合物単結晶太陽電池および化合物単結晶太陽電池の製造方法
EP1920468B1 (de) * 2005-09-01 2014-02-26 Merck Patent GmbH Mit bypassdiode integrierte fotovoltaische zellen
US7732705B2 (en) * 2005-10-11 2010-06-08 Emcore Solar Power, Inc. Reliable interconnection of solar cells including integral bypass diode
US7687707B2 (en) * 2005-11-16 2010-03-30 Emcore Solar Power, Inc. Via structures in solar cells with bypass diode
JP4290747B2 (ja) 2006-06-23 2009-07-08 シャープ株式会社 光電変換素子およびインターコネクタ付き光電変換素子
US7842881B2 (en) * 2006-10-19 2010-11-30 Emcore Solar Power, Inc. Solar cell structure with localized doping in cap layer
JP2015188306A (ja) * 2014-03-13 2015-10-29 石川県 太陽電池回路の検査装置及び検査方法
DE102015002513A1 (de) 2015-03-02 2016-09-08 Azur Space Solar Power Gmbh Solarzellenvorrichtung
US11329177B2 (en) 2018-11-08 2022-05-10 Swift Solar Inc Stable perovskite module interconnects
US11631777B2 (en) 2019-03-11 2023-04-18 Swift Solar Inc. Integration of bypass diodes within thin film photovoltaic module interconnects
JP7059983B2 (ja) * 2019-06-13 2022-04-26 信越半導体株式会社 電子デバイス及びその製造方法
CN112825337B (zh) * 2019-11-21 2023-07-21 江苏宜兴德融科技有限公司 柔性太阳能电池阵

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240171A (ja) * 1984-05-15 1985-11-29 Mitsubishi Electric Corp 太陽光発電装置
US4759803A (en) * 1987-08-07 1988-07-26 Applied Solar Energy Corporation Monolithic solar cell and bypass diode system
US5405453A (en) * 1993-11-08 1995-04-11 Applied Solar Energy Corporation High efficiency multi-junction solar cell
JPH0964397A (ja) * 1995-08-29 1997-03-07 Canon Inc 太陽電池および太陽電池モジュール

Also Published As

Publication number Publication date
EP1008188A4 (de) 2004-04-07
JP2002517098A (ja) 2002-06-11
EP1008188B1 (de) 2009-11-25
EP1008188A1 (de) 2000-06-14
EP1443566B1 (de) 2008-10-15
AU4193899A (en) 1999-12-13
EP1443566A1 (de) 2004-08-04
ATE450055T1 (de) 2009-12-15

Similar Documents

Publication Publication Date Title
DE69941667D1 (de) Solarzelle mit einer integrierten monolitisch gewachsenen Bypassdiode
DE60142658D1 (de) Verbindungssystem für Solarzellen in der gleichen Ebene mit einer integrierten Lasche für eine Diode
DE69418028T2 (de) Laterale halbleiter-auf-isolator-halbleiteranordnung mit einer vergrabenen diode
KR960701529A (ko) 광전 변환기(an optoelectric transducer)
DE69838313D1 (de) Optoelektronische Halbleiteranordnung auf Basis einer Nitridverbindung der Gruppe III
EP0142316A3 (de) P-i-n- und Avalanche-Photodioden
KR840006578A (ko) 반도체 레이저 장치
EP1744419A3 (de) Verbindungshalbleiterlaser
GB9513830D0 (en) Semiconductor laser device including heat sink with pn junction
JPS54101688A (en) Optical semiconductor device
GB9901513D0 (en) Solar cell arrangements
DE59604216D1 (de) Schaltkreis mit monolithisch integrierter PIN-/Schottky-Diodenanordnung
ATE411619T1 (de) Solarzelle mit einer integrierten monolithisch gewachsenen bypassdiode
DE69522510T2 (de) Halbleiterbauelement mit einer Dreieckigen Sperrschichtdiodenstruktur
DE60106742D1 (de) Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter
EP0465151A3 (en) Semiconductor device with shottky junction
EP0342866A3 (de) III-V-Gruppen-Verbindungshalbleiteranordnungs-Schottkykontakt
JPH01108791A (ja) フオト・レーザー・トランジスタ
DE69938280D1 (de) Herstellungsverfahren für eine Solarzelle mit einer Schutzdiode
KR940027201A (ko) 광전자 집적회로
DE69305478T2 (de) Lawinen-Fotodiode
DE69521024T2 (de) Optoelektronische halbleitervorrichtung mit einer halbleiter-laserdiode
DE69324119D1 (de) Diodenstruktur mit PN-Übergang
CA2088612A1 (en) Semiconductor light detecting device
EP0872926A4 (de) Optisches halbleitermodul

Legal Events

Date Code Title Description
8364 No opposition during term of opposition