DE69522510T2 - Halbleiterbauelement mit einer Dreieckigen Sperrschichtdiodenstruktur - Google Patents
Halbleiterbauelement mit einer Dreieckigen SperrschichtdiodenstrukturInfo
- Publication number
- DE69522510T2 DE69522510T2 DE69522510T DE69522510T DE69522510T2 DE 69522510 T2 DE69522510 T2 DE 69522510T2 DE 69522510 T DE69522510 T DE 69522510T DE 69522510 T DE69522510 T DE 69522510T DE 69522510 T2 DE69522510 T2 DE 69522510T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- diode structure
- junction diode
- triangular junction
- triangular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/026—Optical bistable devices based on laser effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Composite Materials (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06162955A JP3141080B2 (ja) | 1994-06-22 | 1994-06-22 | 半導体機能素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69522510D1 DE69522510D1 (de) | 2001-10-11 |
DE69522510T2 true DE69522510T2 (de) | 2002-04-11 |
Family
ID=15764455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69522510T Expired - Fee Related DE69522510T2 (de) | 1994-06-22 | 1995-06-22 | Halbleiterbauelement mit einer Dreieckigen Sperrschichtdiodenstruktur |
Country Status (4)
Country | Link |
---|---|
US (1) | US5952683A (de) |
EP (1) | EP0689250B1 (de) |
JP (1) | JP3141080B2 (de) |
DE (1) | DE69522510T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6163039A (en) * | 1998-08-18 | 2000-12-19 | National Science Council | Triangular-barrier optoelectronic switch |
GB9912178D0 (en) * | 1999-05-25 | 1999-07-28 | Univ Court Of The University O | Improved optical modulator |
KR100463416B1 (ko) * | 2002-09-05 | 2004-12-23 | 한국전자통신연구원 | 아발란치 포토트랜지스터 |
US7130013B2 (en) * | 2004-05-21 | 2006-10-31 | Eastman Kodak Company | Method of forming a display |
US20080121866A1 (en) * | 2006-11-27 | 2008-05-29 | Ping Yuan | Avalanche photodiode detector |
US20100019618A1 (en) * | 2007-07-05 | 2010-01-28 | Eliade Stefanescu | Transversal quantum heat converter |
US20090007951A1 (en) * | 2007-07-05 | 2009-01-08 | Eliade Stefanescu | Quantum injection system |
US20090007950A1 (en) * | 2007-07-05 | 2009-01-08 | Eliade Stefanescu | Longitudinal quantum heat converter |
DE102008011280B4 (de) * | 2008-02-27 | 2010-01-28 | Ketek Gmbh | Strahlungsempfangendes Halbleiterbauelement, Verfahren zum Betreiben und Verwendung desselben sowie Strahlungsdetektor und Halbleiteranordung mit dem Halbleiterbauelement |
US8572921B2 (en) * | 2009-03-27 | 2013-11-05 | Davinci Roofscapes, Llc | One piece hip and ridge shingle |
WO2015142765A1 (en) | 2014-03-17 | 2015-09-24 | Coinbase, Inc | Bitcoin host computer system |
CN111211182A (zh) * | 2018-11-19 | 2020-05-29 | 上海新微技术研发中心有限公司 | 一种波导型光电探测器及其制造方法 |
CN112382670B (zh) * | 2020-10-10 | 2022-05-24 | 西安电子科技大学 | 一种基于高纯本征单晶金刚石的雪崩二极管及制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2518817A1 (fr) * | 1981-12-23 | 1983-06-24 | Thomson Csf | Photodiode a zones d'absorption et d'avalanche separees |
CA1228663A (en) * | 1984-04-10 | 1987-10-27 | Paul P. Webb | Photodetector with isolated avalanche region |
US4600935A (en) * | 1984-11-14 | 1986-07-15 | Rca Corporation | Back-to-back diodes |
JPH0738457B2 (ja) * | 1986-07-18 | 1995-04-26 | 株式会社東芝 | 光・電子双安定素子 |
JPH0783108B2 (ja) * | 1986-07-25 | 1995-09-06 | 株式会社日立製作所 | 半導体装置 |
US4839706A (en) * | 1986-08-07 | 1989-06-13 | Polaroid Corporation | Avalanche photodetector |
JPH05158085A (ja) * | 1991-12-05 | 1993-06-25 | Fujitsu Ltd | 光変調装置及びその製造方法 |
-
1994
- 1994-06-22 JP JP06162955A patent/JP3141080B2/ja not_active Expired - Fee Related
-
1995
- 1995-06-22 EP EP95304385A patent/EP0689250B1/de not_active Expired - Lifetime
- 1995-06-22 DE DE69522510T patent/DE69522510T2/de not_active Expired - Fee Related
-
1997
- 1997-07-15 US US08/892,775 patent/US5952683A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3141080B2 (ja) | 2001-03-05 |
DE69522510D1 (de) | 2001-10-11 |
JPH088443A (ja) | 1996-01-12 |
US5952683A (en) | 1999-09-14 |
EP0689250B1 (de) | 2001-09-05 |
EP0689250A1 (de) | 1995-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69418028D1 (de) | Laterale halbleiter-auf-isolator-halbleiteranordnung mit einer vergrabenen diode | |
DE69322180D1 (de) | Halbleiteranordnung mit einer Leiterschicht | |
DE69406049T2 (de) | Lichtmittierende Halbleitervorrichtung mit einer dritten Begrenzungsschicht | |
DE69515387T2 (de) | Verriegelungseinrichtung mit einer Riegelfunktion | |
DE69318239T2 (de) | Halbleiterbauelement mit planarer Grenzfläche | |
DE69609313T2 (de) | Halbleiterfeldeffektanordnung mit einer sige schicht | |
DE69610459T2 (de) | Vorrichtung mit einer Halbleiterwellenleiterstruktur | |
DE69737621D1 (de) | Halbleiterelement mit einer Höckerelektrode | |
DE69232826T2 (de) | Heteroübergangsbauelement mit einer mehrschichtigen Basis | |
DE60014969D1 (de) | Halbleiterlaservorrichtung mit einer divergierenden region | |
DE69420620T2 (de) | Halbleiteranordnung mit einer Durchgangsleitung | |
DE69522510T2 (de) | Halbleiterbauelement mit einer Dreieckigen Sperrschichtdiodenstruktur | |
DE69620507T2 (de) | Halbleiteranordnung mit einer Schutzvorrichtung | |
DE59408790D1 (de) | Geschirrspülmaschine mit einer Dosiervorrichtung | |
DE69118750T2 (de) | Halbleiteranordnung mit einer Wärmesenke | |
DE69830867D1 (de) | Halbleiteranordnung mit einer leitenden Schutzschicht | |
DE69124310D1 (de) | Halbleiter-Speichereinrichtung mit Strom-Spannungs-Wandler | |
DE69121503T2 (de) | Halbleiterspeicheranordnung mit einer rauscharmen Abfühlstruktur | |
DE69229937T2 (de) | Avalanche Diode in einer bipolaren integrierten Schaltung | |
DE69521024D1 (de) | Optoelektronische halbleitervorrichtung mit einer halbleiter-laserdiode | |
DE69327012T2 (de) | Bauelement mit einer räumlichen Transfer verwendenden Halbleiteranordnung | |
DE69609268D1 (de) | Schottky-Sperrschichtdiode | |
DE69231091T2 (de) | Integrierte Halbleiterschaltung mit einer Schutzvorrichtung | |
DE69031323T2 (de) | Halbleitervorrichtung mit einer Packungsstruktur | |
DE69324119D1 (de) | Diodenstruktur mit PN-Übergang |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |