DE69609268D1 - Schottky-Sperrschichtdiode - Google Patents

Schottky-Sperrschichtdiode

Info

Publication number
DE69609268D1
DE69609268D1 DE69609268T DE69609268T DE69609268D1 DE 69609268 D1 DE69609268 D1 DE 69609268D1 DE 69609268 T DE69609268 T DE 69609268T DE 69609268 T DE69609268 T DE 69609268T DE 69609268 D1 DE69609268 D1 DE 69609268D1
Authority
DE
Germany
Prior art keywords
junction diode
schottky junction
schottky
diode
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69609268T
Other languages
English (en)
Other versions
DE69609268T2 (de
Inventor
Tomoyasu Miyata
Koichi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Application granted granted Critical
Publication of DE69609268D1 publication Critical patent/DE69609268D1/de
Publication of DE69609268T2 publication Critical patent/DE69609268T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66212—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69609268T 1995-08-25 1996-08-23 Schottky-Sperrschichtdiode Expired - Fee Related DE69609268T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7240622A JPH0964381A (ja) 1995-08-25 1995-08-25 ショットキーバリアダイオード

Publications (2)

Publication Number Publication Date
DE69609268D1 true DE69609268D1 (de) 2000-08-17
DE69609268T2 DE69609268T2 (de) 2000-11-30

Family

ID=17062240

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609268T Expired - Fee Related DE69609268T2 (de) 1995-08-25 1996-08-23 Schottky-Sperrschichtdiode

Country Status (5)

Country Link
US (1) US5672904A (de)
EP (1) EP0762512B1 (de)
JP (1) JPH0964381A (de)
KR (1) KR100231797B1 (de)
DE (1) DE69609268T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051871A (en) * 1998-06-30 2000-04-18 The Whitaker Corporation Heterojunction bipolar transistor having improved heat dissipation
US7211824B2 (en) * 2004-09-27 2007-05-01 Nitto Denko Corporation Organic semiconductor diode
JP2009004566A (ja) * 2007-06-21 2009-01-08 Sumitomo Electric Ind Ltd 半導体装置および半導体装置の製造方法
JP2009194225A (ja) * 2008-02-15 2009-08-27 Sumitomo Electric Ind Ltd ショットキバリアダイオード、及びショットキバリアダイオードを作製する方法
KR101261928B1 (ko) 2011-11-07 2013-05-08 현대자동차주식회사 실리콘 카바이드 쇼트키 베리어 다이오드의 제조방법
KR101461886B1 (ko) 2013-09-10 2014-11-13 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
DE102015101966B4 (de) * 2015-02-11 2021-07-08 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterbauelements mit Schottkykontakt und Halbleiterbauelement

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849789A (en) * 1972-11-01 1974-11-19 Gen Electric Schottky barrier diodes
US3923975A (en) * 1973-10-09 1975-12-02 Cutler Hammer Inc Tantalum-gallium arsenide schottky barrier semiconductor device
FR2384356A1 (fr) * 1977-03-17 1978-10-13 Lignes Telegraph Telephon Composant hyperfrequence reciproque a semi-conducteur constituant une impedance variable a temps de reponse inferieur a 200 picosecondes
FR2460040A1 (fr) * 1979-06-22 1981-01-16 Thomson Csf Procede pour realiser une diode schottky a tenue en tension amelioree
CA1189634A (en) * 1981-09-11 1985-06-25 Yoshihito Amemiya Low-loss and high-speed diodes
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
DE69433738T2 (de) * 1993-09-07 2005-03-17 Murata Mfg. Co., Ltd., Nagaokakyo Halbleiterelement und Verfahren zur Herstellung desselben
JPH08139341A (ja) * 1994-11-11 1996-05-31 Murata Mfg Co Ltd ショットキ−バリアダイオ−ド
JP3058040B2 (ja) * 1995-01-18 2000-07-04 株式会社村田製作所 半導体装置

Also Published As

Publication number Publication date
JPH0964381A (ja) 1997-03-07
DE69609268T2 (de) 2000-11-30
EP0762512B1 (de) 2000-07-12
KR100231797B1 (ko) 1999-12-01
KR970013149A (ko) 1997-03-29
EP0762512A1 (de) 1997-03-12
US5672904A (en) 1997-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee