DE69609268D1 - Schottky-Sperrschichtdiode - Google Patents
Schottky-SperrschichtdiodeInfo
- Publication number
- DE69609268D1 DE69609268D1 DE69609268T DE69609268T DE69609268D1 DE 69609268 D1 DE69609268 D1 DE 69609268D1 DE 69609268 T DE69609268 T DE 69609268T DE 69609268 T DE69609268 T DE 69609268T DE 69609268 D1 DE69609268 D1 DE 69609268D1
- Authority
- DE
- Germany
- Prior art keywords
- junction diode
- schottky junction
- schottky
- diode
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7240622A JPH0964381A (ja) | 1995-08-25 | 1995-08-25 | ショットキーバリアダイオード |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69609268D1 true DE69609268D1 (de) | 2000-08-17 |
| DE69609268T2 DE69609268T2 (de) | 2000-11-30 |
Family
ID=17062240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69609268T Expired - Fee Related DE69609268T2 (de) | 1995-08-25 | 1996-08-23 | Schottky-Sperrschichtdiode |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5672904A (de) |
| EP (1) | EP0762512B1 (de) |
| JP (1) | JPH0964381A (de) |
| KR (1) | KR100231797B1 (de) |
| DE (1) | DE69609268T2 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6051871A (en) * | 1998-06-30 | 2000-04-18 | The Whitaker Corporation | Heterojunction bipolar transistor having improved heat dissipation |
| US7211824B2 (en) * | 2004-09-27 | 2007-05-01 | Nitto Denko Corporation | Organic semiconductor diode |
| JP2009004566A (ja) * | 2007-06-21 | 2009-01-08 | Sumitomo Electric Ind Ltd | 半導体装置および半導体装置の製造方法 |
| JP2009194225A (ja) * | 2008-02-15 | 2009-08-27 | Sumitomo Electric Ind Ltd | ショットキバリアダイオード、及びショットキバリアダイオードを作製する方法 |
| KR101261928B1 (ko) | 2011-11-07 | 2013-05-08 | 현대자동차주식회사 | 실리콘 카바이드 쇼트키 베리어 다이오드의 제조방법 |
| KR101461886B1 (ko) * | 2013-09-10 | 2014-11-13 | 현대자동차 주식회사 | 쇼트키 배리어 다이오드 및 그 제조 방법 |
| DE102015101966B4 (de) | 2015-02-11 | 2021-07-08 | Infineon Technologies Austria Ag | Verfahren zum Herstellen eines Halbleiterbauelements mit Schottkykontakt und Halbleiterbauelement |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3849789A (en) * | 1972-11-01 | 1974-11-19 | Gen Electric | Schottky barrier diodes |
| US3923975A (en) * | 1973-10-09 | 1975-12-02 | Cutler Hammer Inc | Tantalum-gallium arsenide schottky barrier semiconductor device |
| FR2384356A1 (fr) * | 1977-03-17 | 1978-10-13 | Lignes Telegraph Telephon | Composant hyperfrequence reciproque a semi-conducteur constituant une impedance variable a temps de reponse inferieur a 200 picosecondes |
| FR2460040A1 (fr) * | 1979-06-22 | 1981-01-16 | Thomson Csf | Procede pour realiser une diode schottky a tenue en tension amelioree |
| CA1189634A (en) * | 1981-09-11 | 1985-06-25 | Yoshihito Amemiya | Low-loss and high-speed diodes |
| US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
| EP0642175B1 (de) * | 1993-09-07 | 2004-04-28 | Murata Manufacturing Co., Ltd. | Halbleiteranordnung mit Schottky-Elektrode und Verfahren zur Herstellung |
| JPH08139341A (ja) * | 1994-11-11 | 1996-05-31 | Murata Mfg Co Ltd | ショットキ−バリアダイオ−ド |
| JP3058040B2 (ja) * | 1995-01-18 | 2000-07-04 | 株式会社村田製作所 | 半導体装置 |
-
1995
- 1995-08-25 JP JP7240622A patent/JPH0964381A/ja active Pending
-
1996
- 1996-08-23 KR KR1019960035133A patent/KR100231797B1/ko not_active IP Right Cessation
- 1996-08-23 US US08/708,094 patent/US5672904A/en not_active Expired - Fee Related
- 1996-08-23 EP EP96113586A patent/EP0762512B1/de not_active Expired - Lifetime
- 1996-08-23 DE DE69609268T patent/DE69609268T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0762512B1 (de) | 2000-07-12 |
| JPH0964381A (ja) | 1997-03-07 |
| KR970013149A (ko) | 1997-03-29 |
| KR100231797B1 (ko) | 1999-12-01 |
| DE69609268T2 (de) | 2000-11-30 |
| US5672904A (en) | 1997-09-30 |
| EP0762512A1 (de) | 1997-03-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |