FI960247A - Puolijohdelaite, johon kuuluu schottky-liitos - Google Patents
Puolijohdelaite, johon kuuluu schottky-liitos Download PDFInfo
- Publication number
- FI960247A FI960247A FI960247A FI960247A FI960247A FI 960247 A FI960247 A FI 960247A FI 960247 A FI960247 A FI 960247A FI 960247 A FI960247 A FI 960247A FI 960247 A FI960247 A FI 960247A
- Authority
- FI
- Finland
- Prior art keywords
- semiconductor device
- schottky connection
- schottky
- connection
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7005869A JP3058040B2 (ja) | 1995-01-18 | 1995-01-18 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FI960247A0 FI960247A0 (fi) | 1996-01-18 |
FI960247A true FI960247A (fi) | 1996-07-19 |
Family
ID=11622952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI960247A FI960247A (fi) | 1995-01-18 | 1996-01-18 | Puolijohdelaite, johon kuuluu schottky-liitos |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0723300A3 (fi) |
JP (1) | JP3058040B2 (fi) |
KR (1) | KR100198309B1 (fi) |
FI (1) | FI960247A (fi) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0964381A (ja) * | 1995-08-25 | 1997-03-07 | Murata Mfg Co Ltd | ショットキーバリアダイオード |
JP4751498B2 (ja) * | 2000-03-30 | 2011-08-17 | 富士通株式会社 | 半導体三端子装置 |
JP4606552B2 (ja) * | 2000-06-27 | 2011-01-05 | 富士通株式会社 | 半導体装置 |
KR100402784B1 (ko) * | 2000-12-22 | 2003-10-22 | 한국전자통신연구원 | 저온 측정용 갈륨비소 반도체 소자 및 그 제조방법 |
JP3951743B2 (ja) | 2002-02-28 | 2007-08-01 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US8193602B2 (en) * | 2010-04-20 | 2012-06-05 | Texas Instruments Incorporated | Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown |
JP6032427B2 (ja) * | 2013-02-27 | 2016-11-30 | セイコーエプソン株式会社 | 光伝導アンテナ、カメラ、イメージング装置、および計測装置 |
DE102015101966B4 (de) * | 2015-02-11 | 2021-07-08 | Infineon Technologies Austria Ag | Verfahren zum Herstellen eines Halbleiterbauelements mit Schottkykontakt und Halbleiterbauelement |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5636170A (en) * | 1979-08-31 | 1981-04-09 | Fujitsu Ltd | Manufacture of field-effect semiconductor device |
EP0642175B1 (en) * | 1993-09-07 | 2004-04-28 | Murata Manufacturing Co., Ltd. | Semiconductor element with Schottky electrode and process for producing the same |
-
1995
- 1995-01-18 JP JP7005869A patent/JP3058040B2/ja not_active Expired - Fee Related
-
1996
- 1996-01-17 KR KR1019960000886A patent/KR100198309B1/ko not_active IP Right Cessation
- 1996-01-18 EP EP96100709A patent/EP0723300A3/en not_active Withdrawn
- 1996-01-18 FI FI960247A patent/FI960247A/fi unknown
Also Published As
Publication number | Publication date |
---|---|
EP0723300A2 (en) | 1996-07-24 |
EP0723300A3 (en) | 1996-11-20 |
KR100198309B1 (ko) | 1999-06-15 |
JP3058040B2 (ja) | 2000-07-04 |
KR960030447A (ko) | 1996-08-17 |
FI960247A0 (fi) | 1996-01-18 |
JPH08195403A (ja) | 1996-07-30 |
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