DE69325206D1 - Vergrabener Lawinendiode - Google Patents
Vergrabener LawinendiodeInfo
- Publication number
- DE69325206D1 DE69325206D1 DE69325206T DE69325206T DE69325206D1 DE 69325206 D1 DE69325206 D1 DE 69325206D1 DE 69325206 T DE69325206 T DE 69325206T DE 69325206 T DE69325206 T DE 69325206T DE 69325206 D1 DE69325206 D1 DE 69325206D1
- Authority
- DE
- Germany
- Prior art keywords
- avalanche diode
- buried
- buried avalanche
- diode
- avalanche
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9203762A FR2688942A1 (fr) | 1992-03-20 | 1992-03-20 | Diode a avalanche enterree. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69325206D1 true DE69325206D1 (de) | 1999-07-15 |
DE69325206T2 DE69325206T2 (de) | 2000-01-20 |
Family
ID=9428191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69325206T Expired - Fee Related DE69325206T2 (de) | 1992-03-20 | 1993-03-17 | Vergrabener Lawinendiode |
Country Status (5)
Country | Link |
---|---|
US (1) | US5336920A (de) |
EP (1) | EP0568466B1 (de) |
JP (1) | JP3493681B2 (de) |
DE (1) | DE69325206T2 (de) |
FR (1) | FR2688942A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3173268B2 (ja) * | 1994-01-06 | 2001-06-04 | 富士電機株式会社 | Mis電界効果トランジスタを備えた半導体装置 |
JP4278721B2 (ja) * | 1994-09-30 | 2009-06-17 | テキサス インスツルメンツ インコーポレイテツド | 高い逆降伏電圧を有するツェナーダイオード |
US5883414A (en) * | 1996-02-06 | 1999-03-16 | Harris Corporation | Electrostatic discharge protection device |
US6831346B1 (en) * | 2001-05-04 | 2004-12-14 | Cypress Semiconductor Corp. | Buried layer substrate isolation in integrated circuits |
US7700977B2 (en) * | 2007-06-21 | 2010-04-20 | Intersil Americas Inc. | Integrated circuit with a subsurface diode |
JP2013073992A (ja) | 2011-09-27 | 2013-04-22 | Semiconductor Components Industries Llc | 半導体装置 |
US20180076038A1 (en) * | 2016-09-09 | 2018-03-15 | Texas Instruments Incorporated | Method For Producing Two N-Type Buried Layers In An Integrated Circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878452A (ja) * | 1981-11-04 | 1983-05-12 | Toshiba Corp | 半導体装置の製造方法 |
JPS5932177A (ja) * | 1982-08-18 | 1984-02-21 | Toshiba Corp | 半導体装置 |
US4872039A (en) * | 1986-04-25 | 1989-10-03 | General Electric Company | Buried lateral diode and method for making same |
-
1992
- 1992-03-20 FR FR9203762A patent/FR2688942A1/fr active Pending
-
1993
- 1993-03-17 DE DE69325206T patent/DE69325206T2/de not_active Expired - Fee Related
- 1993-03-17 EP EP93420120A patent/EP0568466B1/de not_active Expired - Lifetime
- 1993-03-17 US US08/032,500 patent/US5336920A/en not_active Expired - Lifetime
- 1993-03-18 JP JP08239493A patent/JP3493681B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5336920A (en) | 1994-08-09 |
DE69325206T2 (de) | 2000-01-20 |
EP0568466B1 (de) | 1999-06-09 |
JP3493681B2 (ja) | 2004-02-03 |
JPH0745842A (ja) | 1995-02-14 |
EP0568466A1 (de) | 1993-11-03 |
FR2688942A1 (fr) | 1993-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |