DE69229369T2 - Halbleiterphotodetektor mit Lawinenmultiplikation - Google Patents

Halbleiterphotodetektor mit Lawinenmultiplikation

Info

Publication number
DE69229369T2
DE69229369T2 DE69229369T DE69229369T DE69229369T2 DE 69229369 T2 DE69229369 T2 DE 69229369T2 DE 69229369 T DE69229369 T DE 69229369T DE 69229369 T DE69229369 T DE 69229369T DE 69229369 T2 DE69229369 T2 DE 69229369T2
Authority
DE
Germany
Prior art keywords
avalanche multiplication
semiconductor photodetector
photodetector
semiconductor
avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229369T
Other languages
English (en)
Other versions
DE69229369D1 (de
Inventor
Masayoshi Tsuji
Kikuo Makita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3149124A external-priority patent/JPH04372178A/ja
Priority claimed from JP3149123A external-priority patent/JP3018589B2/ja
Priority claimed from JP3163057A external-priority patent/JP3001291B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69229369D1 publication Critical patent/DE69229369D1/de
Application granted granted Critical
Publication of DE69229369T2 publication Critical patent/DE69229369T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y10S977/761—Superlattice with well or barrier thickness adapted for increasing the reflection, transmission, or filtering of carriers having energies above the bulk-form conduction or valence band energy level of the well or barrier, i.e. well or barrier with n-integer-λ-carrier-/4 thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
DE69229369T 1991-03-28 1992-03-27 Halbleiterphotodetektor mit Lawinenmultiplikation Expired - Fee Related DE69229369T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP6426791 1991-03-28
JP3149124A JPH04372178A (ja) 1991-06-21 1991-06-21 半導体受光素子
JP3149123A JP3018589B2 (ja) 1991-03-28 1991-06-21 半導体受光素子
JP3163057A JP3001291B2 (ja) 1991-07-03 1991-07-03 半導体受光素子

Publications (2)

Publication Number Publication Date
DE69229369D1 DE69229369D1 (de) 1999-07-15
DE69229369T2 true DE69229369T2 (de) 2000-01-27

Family

ID=27464418

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229369T Expired - Fee Related DE69229369T2 (de) 1991-03-28 1992-03-27 Halbleiterphotodetektor mit Lawinenmultiplikation

Country Status (3)

Country Link
US (1) US5471068A (de)
EP (1) EP0506127B1 (de)
DE (1) DE69229369T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140624A (ja) * 1992-10-22 1994-05-20 Furukawa Electric Co Ltd:The ショットキー接合素子
KR960001467B1 (ko) * 1992-12-22 1996-01-30 한국 전기통신공사 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode)
JPH07335934A (ja) * 1994-06-03 1995-12-22 Mitsubishi Electric Corp 光半導体素子，及びその製造方法
JP2809124B2 (ja) * 1995-02-09 1998-10-08 日本電気株式会社 光半導体集積素子およびその製造方法
JP3014339B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
JP3014341B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有したダイオード
EP0935294A1 (de) * 1998-02-06 1999-08-11 Canare Electric Co., Ltd. Bauelement mit variabler Kapazität und mit Quantenwellen-Interferenz-Schichten
EP0954034A3 (de) 1998-04-28 2000-01-26 Canare Electric Co., Ltd. Lichtempfänger mit Quantenwelleninterferenzschichten
JP3014364B2 (ja) * 1998-05-26 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
EP1011150A3 (de) * 1998-12-17 2004-01-02 Canare Electric Co., Ltd. Lichtempfindliche Anordnung mit Quantenwelleninterferenzschichten
US6229152B1 (en) * 1999-02-18 2001-05-08 The Trustees Of Princeton University Strain compensated indium galium arsenide quantum well photoconductors with high indium content extended wavelength operation
JP2001332759A (ja) 2000-03-16 2001-11-30 Matsushita Electric Ind Co Ltd アバランシェフォトダイオード
JP3652977B2 (ja) * 2000-06-06 2005-05-25 ユーディナデバイス株式会社 半導体受光装置およびその製造方法
US20070012965A1 (en) * 2005-07-15 2007-01-18 General Electric Company Photodetection system and module
US8239176B2 (en) * 2008-02-13 2012-08-07 Feng Ma Simulation methods and systems for carriers having multiplications
WO2009139936A2 (en) * 2008-02-14 2009-11-19 California Institute Of Technology Single photon detection with self-quenching multiplication
US10128397B1 (en) * 2012-05-21 2018-11-13 The Boeing Company Low excess noise, high gain avalanche photodiodes
US11029406B2 (en) 2018-04-06 2021-06-08 Luminar, Llc Lidar system with AlInAsSb avalanche photodiode

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4553317A (en) * 1981-11-09 1985-11-19 Canon Kabushiki Kaisha Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors
JPS6049681A (ja) * 1983-08-29 1985-03-18 Fujitsu Ltd 半導体受光装置
JP2747299B2 (ja) * 1988-09-28 1998-05-06 株式会社日立製作所 半導体受光素子
JP2664960B2 (ja) * 1988-10-28 1997-10-22 日本電信電話株式会社 アバランシェフォトダイオード
JP2669040B2 (ja) * 1989-03-28 1997-10-27 日本電気株式会社 アバランシェ・フオトダイオード
US4952792A (en) * 1989-10-13 1990-08-28 At&T Bell Laboratories Devices employing internally strained asymmetric quantum wells
JP2937404B2 (ja) * 1990-04-18 1999-08-23 日本電気株式会社 半導体受光素子
US5204539A (en) * 1991-01-28 1993-04-20 Nec Corporation Avalanche photodiode with hetero-periodical structure

Also Published As

Publication number Publication date
EP0506127A1 (de) 1992-09-30
EP0506127B1 (de) 1999-06-09
US5471068A (en) 1995-11-28
DE69229369D1 (de) 1999-07-15

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee