DE69218474D1 - Lawinenfotodiode - Google Patents
LawinenfotodiodeInfo
- Publication number
- DE69218474D1 DE69218474D1 DE69218474T DE69218474T DE69218474D1 DE 69218474 D1 DE69218474 D1 DE 69218474D1 DE 69218474 T DE69218474 T DE 69218474T DE 69218474 T DE69218474 T DE 69218474T DE 69218474 D1 DE69218474 D1 DE 69218474D1
- Authority
- DE
- Germany
- Prior art keywords
- photo diode
- avalanche photo
- avalanche
- diode
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
- Y10S977/76—Superlattice with graded effective bandgap, e.g. "chirp-graded" superlattice
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
- Y10S977/761—Superlattice with well or barrier thickness adapted for increasing the reflection, transmission, or filtering of carriers having energies above the bulk-form conduction or valence band energy level of the well or barrier, i.e. well or barrier with n-integer-λ-carrier-/4 thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3008179A JP2730297B2 (ja) | 1991-01-28 | 1991-01-28 | 半導体受光素子 |
JP3064266A JP2936770B2 (ja) | 1991-03-28 | 1991-03-28 | 半導体受光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69218474D1 true DE69218474D1 (de) | 1997-04-30 |
DE69218474T2 DE69218474T2 (de) | 1997-08-07 |
Family
ID=26342650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69218474T Expired - Fee Related DE69218474T2 (de) | 1991-01-28 | 1992-01-28 | Lawinenfotodiode |
Country Status (3)
Country | Link |
---|---|
US (1) | US5204539A (de) |
EP (1) | EP0497279B1 (de) |
DE (1) | DE69218474T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0506127B1 (de) * | 1991-03-28 | 1999-06-09 | Nec Corporation | Halbleiterphotodetektor mit Lawinenmultiplikation |
JP2998375B2 (ja) * | 1991-12-20 | 2000-01-11 | 日本電気株式会社 | アバランシェフォトダイオード |
JPH07115184A (ja) * | 1993-08-24 | 1995-05-02 | Canon Inc | 積層型固体撮像装置及びその製造方法 |
US5593902A (en) * | 1994-05-23 | 1997-01-14 | Texas Instruments Incorporated | Method of making photodiodes for low dark current operation having geometric enhancement |
JP2809124B2 (ja) * | 1995-02-09 | 1998-10-08 | 日本電気株式会社 | 光半導体集積素子およびその製造方法 |
US5610416A (en) * | 1995-02-16 | 1997-03-11 | Hewlett-Packard Company | Avalanche photodiode with epitaxially regrown guard rings |
US5771256A (en) * | 1996-06-03 | 1998-06-23 | Bell Communications Research, Inc. | InP-based lasers with reduced blue shifts |
US5866936A (en) * | 1997-04-01 | 1999-02-02 | Hewlett-Packard Company | Mesa-structure avalanche photodiode having a buried epitaxial junction |
JP3014341B2 (ja) * | 1997-04-25 | 2000-02-28 | カナレ電気株式会社 | 量子波干渉層を有したダイオード |
US5757057A (en) * | 1997-06-25 | 1998-05-26 | Advanced Photonix, Inc. | Large area avalanche photodiode array |
US5831322A (en) * | 1997-06-25 | 1998-11-03 | Advanced Photonix, Inc. | Active large area avalanche photodiode array |
US6294795B1 (en) | 1998-04-28 | 2001-09-25 | Canare Electric Co., Ltd. | Light-receiving device with quantum-wave interference layers |
JP3014364B2 (ja) | 1998-05-26 | 2000-02-28 | カナレ電気株式会社 | 量子波干渉層を有した半導体素子 |
US7045833B2 (en) * | 2000-09-29 | 2006-05-16 | Board Of Regents, The University Of Texas System | Avalanche photodiodes with an impact-ionization-engineered multiplication region |
JP6593140B2 (ja) * | 2015-12-09 | 2019-10-23 | 住友電気工業株式会社 | フォトダイオード |
CN107863403B (zh) * | 2017-11-28 | 2023-10-20 | 中国工程物理研究院电子工程研究所 | 一种高线性增益红外雪崩光电二极管及其制备方法 |
EP3821472A4 (de) * | 2018-07-11 | 2022-03-02 | SRI International | Linearmodus-lawinenphotodioden ohne übermässiges rauschen |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5861679A (ja) * | 1981-10-07 | 1983-04-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 量子井戸層付アバランシ・ホトダイオ−ド |
US4553317A (en) * | 1981-11-09 | 1985-11-19 | Canon Kabushiki Kaisha | Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors |
JPH01144687A (ja) * | 1987-11-30 | 1989-06-06 | Nec Corp | 半導体受光素子 |
JPH01194476A (ja) * | 1988-01-29 | 1989-08-04 | Nec Corp | 半導体受光素子 |
JPH0210780A (ja) * | 1988-06-28 | 1990-01-16 | Nec Corp | 半導体受光素子 |
JPH02119274A (ja) * | 1988-10-28 | 1990-05-07 | Fujitsu Ltd | アバランシェフォトダイオード |
US4942436A (en) * | 1988-10-31 | 1990-07-17 | Polaroid Corporation | Superlattice avalanche photodetector |
JPH0821727B2 (ja) * | 1988-11-18 | 1996-03-04 | 日本電気株式会社 | アバランシェフォトダイオード |
JPH02246381A (ja) * | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | 超格子アバランシェホトダイオード |
-
1992
- 1992-01-27 US US07/826,494 patent/US5204539A/en not_active Expired - Lifetime
- 1992-01-28 DE DE69218474T patent/DE69218474T2/de not_active Expired - Fee Related
- 1992-01-28 EP EP92101356A patent/EP0497279B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0497279A1 (de) | 1992-08-05 |
EP0497279B1 (de) | 1997-03-26 |
DE69218474T2 (de) | 1997-08-07 |
US5204539A (en) | 1993-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |