DE69217360T2 - Laserdioden - Google Patents

Laserdioden

Info

Publication number
DE69217360T2
DE69217360T2 DE69217360T DE69217360T DE69217360T2 DE 69217360 T2 DE69217360 T2 DE 69217360T2 DE 69217360 T DE69217360 T DE 69217360T DE 69217360 T DE69217360 T DE 69217360T DE 69217360 T2 DE69217360 T2 DE 69217360T2
Authority
DE
Germany
Prior art keywords
laser diodes
diodes
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69217360T
Other languages
English (en)
Other versions
DE69217360D1 (de
Inventor
James J Appel
Kenneth R Rossman
Thomas L Paoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE69217360D1 publication Critical patent/DE69217360D1/de
Publication of DE69217360T2 publication Critical patent/DE69217360T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69217360T 1991-06-27 1992-07-17 Laserdioden Expired - Lifetime DE69217360T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/724,567 US5140605A (en) 1991-06-27 1991-06-27 Thermally stabilized diode laser structure
EP92306576A EP0578883B1 (de) 1991-06-27 1992-07-17 Laserdioden

Publications (2)

Publication Number Publication Date
DE69217360D1 DE69217360D1 (de) 1997-03-20
DE69217360T2 true DE69217360T2 (de) 1997-07-17

Family

ID=26132108

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69217360T Expired - Lifetime DE69217360T2 (de) 1991-06-27 1992-07-17 Laserdioden

Country Status (4)

Country Link
US (1) US5140605A (de)
EP (1) EP0578883B1 (de)
JP (1) JP3266207B2 (de)
DE (1) DE69217360T2 (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262658A (en) * 1991-12-24 1993-11-16 Xerox Corporation Thermally stabilized light emitting diode structure
CA2091302A1 (en) * 1992-03-11 1993-09-12 Ichiro Yoshida Semiconductor laser and process for fabricating the same
JPH05315706A (ja) * 1992-05-11 1993-11-26 Mitsubishi Electric Corp 半導体レーザ
US5488625A (en) * 1992-10-07 1996-01-30 Canon Kabushiki Kaisha Semiconductor laser device having chip-mounted heating element
US5465264A (en) * 1993-11-22 1995-11-07 Xerox Corporation Electronic simulation for compensating laser diode thermal effects
US5515391A (en) * 1994-03-07 1996-05-07 Sdl, Inc. Thermally balanced diode laser package
US5978401A (en) * 1995-10-25 1999-11-02 Honeywell Inc. Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver
US5774487A (en) * 1996-10-16 1998-06-30 Honeywell Inc. Filamented multi-wavelength vertical-cavity surface emitting laser
DE19746204A1 (de) 1997-10-18 1999-04-29 Deutsche Telekom Ag Halbleiterlaserchip
DE19755457A1 (de) * 1997-12-01 1999-06-10 Deutsche Telekom Ag Verfahren und Anordnung zur Wellenlängenabstimmung einer optoelektronischen Bauelemente-Anordnung
JP2001326418A (ja) * 2000-05-16 2001-11-22 Yokogawa Electric Corp 半導体レーザ光源及び半導体レーザ光源の変調方法
US7065124B2 (en) * 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6905900B1 (en) 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US6836501B2 (en) * 2000-12-29 2004-12-28 Finisar Corporation Resonant reflector for increased wavelength and polarization control
US6727520B2 (en) * 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
US6782027B2 (en) 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices
TWI227799B (en) * 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
GB2372376A (en) * 2001-02-15 2002-08-21 Marconi Caswell Ltd Semiconductor Laser
US6606199B2 (en) 2001-10-10 2003-08-12 Honeywell International Inc. Graded thickness optical element and method of manufacture therefor
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
JP4253516B2 (ja) * 2003-02-26 2009-04-15 シャープ株式会社 半導体レーザ素子およびその製造方法
US7196355B2 (en) 2003-03-07 2007-03-27 Avanex Corporation Integrated thermal sensor for optoelectronic modules
FR2852145B1 (fr) * 2003-03-07 2005-05-27 Cit Alcatel Module optoelectronique comportant un capteur thermique integre
US20040222363A1 (en) * 2003-05-07 2004-11-11 Honeywell International Inc. Connectorized optical component misalignment detection system
US20040247250A1 (en) * 2003-06-03 2004-12-09 Honeywell International Inc. Integrated sleeve pluggable package
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7075962B2 (en) * 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US20060056762A1 (en) * 2003-07-02 2006-03-16 Honeywell International Inc. Lens optical coupler
US7210857B2 (en) * 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US20050013542A1 (en) * 2003-07-16 2005-01-20 Honeywell International Inc. Coupler having reduction of reflections to light source
US20050013539A1 (en) * 2003-07-17 2005-01-20 Honeywell International Inc. Optical coupling system
US6887801B2 (en) * 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7031363B2 (en) * 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
GB2408847B (en) 2003-12-04 2006-11-01 Agilent Technologies Inc Semiconductor laser with integrated heating element and method of manufacturing same
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7829912B2 (en) * 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
US8112243B2 (en) * 2007-06-20 2012-02-07 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Forward voltage short-pulse technique for measuring high power laser array junction temperture
JP5899146B2 (ja) * 2013-03-26 2016-04-06 日本電信電話株式会社 多波長半導体レーザ光源
CN103259187B (zh) * 2013-05-20 2016-01-13 浙江大学 基于片上加热电阻波长调谐的v型耦合腔半导体激光器
EP3048680A1 (de) * 2015-01-23 2016-07-27 Alcatel Lucent Transiente wellenlängenabdriftreduktion in halbleiterlasern
US10283151B1 (en) 2017-05-02 2019-05-07 Seagate Technology Llc Laser diode with integrated temperature control unit for a heat-assisted magnetic recording device
CN110945802B (zh) 2017-07-29 2023-01-20 光速株式会社 以突发模式工作的光发射机及以突发模式工作的光发射机的控制方法
US11552454B1 (en) * 2017-09-28 2023-01-10 Apple Inc. Integrated laser source
CN113725725A (zh) 2017-09-28 2021-11-30 苹果公司 使用量子阱混合技术的激光架构
DE102018118694A1 (de) * 2018-08-01 2020-02-06 Osram Opto Semiconductors Gmbh Laserdiodenchip
US11171464B1 (en) 2018-12-14 2021-11-09 Apple Inc. Laser integration techniques

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251090A (ja) * 1985-04-30 1986-11-08 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザおよびその製造方法
DE3534744A1 (de) * 1985-09-28 1987-04-09 Standard Elektrik Lorenz Ag Laservorrichtung mit stabilisierter ausgangsleistung
US4831629A (en) * 1987-09-01 1989-05-16 Xerox Corporation Incoherent, optically coupled laser arrays with increased spectral width
US4987468A (en) * 1988-06-17 1991-01-22 Xerox Corporation Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
US4870652A (en) * 1988-07-08 1989-09-26 Xerox Corporation Monolithic high density arrays of independently addressable semiconductor laser sources
US4980893A (en) * 1989-05-25 1990-12-25 Xerox Corporation Monolithic high density arrays of independently addressable offset semiconductor laser sources
JPH04116878A (ja) * 1990-09-07 1992-04-17 Ricoh Co Ltd ヒータ付半導体レーザ素子

Also Published As

Publication number Publication date
EP0578883B1 (de) 1997-02-05
JP3266207B2 (ja) 2002-03-18
JPH05190981A (ja) 1993-07-30
EP0578883A1 (de) 1994-01-19
DE69217360D1 (de) 1997-03-20
US5140605A (en) 1992-08-18

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