DE69226596T2 - Signalprozessor mit Lawinendioden - Google Patents
Signalprozessor mit LawinendiodenInfo
- Publication number
- DE69226596T2 DE69226596T2 DE69226596T DE69226596T DE69226596T2 DE 69226596 T2 DE69226596 T2 DE 69226596T2 DE 69226596 T DE69226596 T DE 69226596T DE 69226596 T DE69226596 T DE 69226596T DE 69226596 T2 DE69226596 T2 DE 69226596T2
- Authority
- DE
- Germany
- Prior art keywords
- signal processor
- avalanche diodes
- avalanche
- diodes
- processor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30570491 | 1991-10-25 | ||
JP30570391 | 1991-10-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69226596D1 DE69226596D1 (de) | 1998-09-17 |
DE69226596T2 true DE69226596T2 (de) | 1999-03-18 |
Family
ID=26564409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69226596T Expired - Fee Related DE69226596T2 (de) | 1991-10-25 | 1992-10-23 | Signalprozessor mit Lawinendioden |
Country Status (3)
Country | Link |
---|---|
US (1) | US5401952A (de) |
EP (1) | EP0538886B1 (de) |
DE (1) | DE69226596T2 (de) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06273796A (ja) * | 1993-01-21 | 1994-09-30 | Victor Co Of Japan Ltd | 空間光変調素子 |
JP3441761B2 (ja) * | 1993-05-28 | 2003-09-02 | キヤノン株式会社 | イメージセンサ |
JPH07115184A (ja) * | 1993-08-24 | 1995-05-02 | Canon Inc | 積層型固体撮像装置及びその製造方法 |
US6035013A (en) * | 1994-06-01 | 2000-03-07 | Simage O.Y. | Radiographic imaging devices, systems and methods |
GB2289983B (en) * | 1994-06-01 | 1996-10-16 | Simage Oy | Imaging devices,systems and methods |
US6300977B1 (en) * | 1995-04-07 | 2001-10-09 | Ifire Technology Inc. | Read-out circuit for active matrix imaging arrays |
JP3838665B2 (ja) * | 1995-08-11 | 2006-10-25 | 株式会社 東芝 | Mos型固体撮像装置 |
JP3439581B2 (ja) * | 1995-10-31 | 2003-08-25 | シャープ株式会社 | 固体撮像装置 |
US5781233A (en) * | 1996-03-14 | 1998-07-14 | Tritech Microelectronics, Ltd. | MOS FET camera chip and methods of manufacture and operation thereof |
US5818052A (en) * | 1996-04-18 | 1998-10-06 | Loral Fairchild Corp. | Low light level solid state image sensor |
US5844265A (en) * | 1996-07-11 | 1998-12-01 | Synaptics, Incorporated | Sense amplifier for high-density imaging array |
US5838176A (en) * | 1996-07-11 | 1998-11-17 | Foveonics, Inc. | Correlated double sampling circuit |
US5932902A (en) * | 1996-08-19 | 1999-08-03 | Sony Corporation | Solid-state imaging device with element-separating electrodes |
US9054094B2 (en) | 1997-04-08 | 2015-06-09 | X2Y Attenuators, Llc | Energy conditioning circuit arrangement for integrated circuit |
US7274549B2 (en) * | 2000-12-15 | 2007-09-25 | X2Y Attenuators, Llc | Energy pathway arrangements for energy conditioning |
US6603646B2 (en) * | 1997-04-08 | 2003-08-05 | X2Y Attenuators, Llc | Multi-functional energy conditioner |
US7301748B2 (en) | 1997-04-08 | 2007-11-27 | Anthony Anthony A | Universal energy conditioning interposer with circuit architecture |
US20020079116A1 (en) * | 2000-10-17 | 2002-06-27 | X2Y Attenuators, Llc | Amalgam of shielding and shielded energy pathways and other elements for single or multiple circuitries with common reference node |
US7336468B2 (en) | 1997-04-08 | 2008-02-26 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
US7321485B2 (en) | 1997-04-08 | 2008-01-22 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
JP3592037B2 (ja) | 1997-05-30 | 2004-11-24 | キヤノン株式会社 | 光電変換装置 |
KR100246358B1 (ko) * | 1997-09-25 | 2000-03-15 | 김영환 | 전자셔터를 구비한 액티브 픽셀 센서 |
JPH11307756A (ja) * | 1998-02-20 | 1999-11-05 | Canon Inc | 光電変換装置および放射線読取装置 |
US9029793B2 (en) | 1998-11-05 | 2015-05-12 | Siemens Aktiengesellschaft | Imaging device |
WO2000062331A2 (en) * | 1999-04-02 | 2000-10-19 | University Of Delaware | Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium |
AU5784400A (en) * | 1999-07-02 | 2001-01-22 | Digirad Corporation | Indirect back surface contact to semiconductor devices |
EP1073267B1 (de) | 1999-07-30 | 2010-12-22 | Canon Kabushiki Kaisha | Strahlungsbildaufnahmeapparatus |
US6359293B1 (en) * | 1999-08-17 | 2002-03-19 | Agere Systems Guardian Corp. | Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes |
JP3493405B2 (ja) * | 2000-08-31 | 2004-02-03 | ミノルタ株式会社 | 固体撮像装置 |
US7193831B2 (en) * | 2000-10-17 | 2007-03-20 | X2Y Attenuators, Llc | Energy pathway arrangement |
DE60134493D1 (de) * | 2000-12-12 | 2008-07-31 | Japan Science & Tech Agency | Lenkmechanismus für elektrisches fahrzeug |
KR20040031862A (ko) * | 2002-10-04 | 2004-04-14 | (주)그래픽테크노재팬 | 생산성 및 감도가 향상된 이미지 센서 |
GB0224689D0 (en) * | 2002-10-23 | 2002-12-04 | Simage Oy | Formation of contacts on semiconductor substrates |
DE60328904D1 (de) * | 2002-10-25 | 2009-10-01 | Ipl Intellectual Property Lice | Schaltungssubstrat und verfahren |
US7453129B2 (en) | 2002-12-18 | 2008-11-18 | Noble Peak Vision Corp. | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
US7643755B2 (en) * | 2003-10-13 | 2010-01-05 | Noble Peak Vision Corp. | Optical receiver comprising a receiver photodetector integrated with an imaging array |
US7180718B2 (en) * | 2003-01-31 | 2007-02-20 | X2Y Attenuators, Llc | Shielded energy conditioner |
DE602004016679D1 (de) * | 2003-10-13 | 2008-10-30 | Noble Peak Vision Corp | Mit einem siliziumsubstrat und einem siliziumschaltkreis integrierte isolierte germanium-photodetektoren umfassender bildsensor |
CN1890854A (zh) | 2003-12-22 | 2007-01-03 | X2Y艾泰钮埃特有限责任公司 | 内屏蔽式能量调节装置 |
WO2006093831A2 (en) | 2005-03-01 | 2006-09-08 | X2Y Attenuators, Llc | Energy conditioner with tied through electrodes |
WO2006104613A2 (en) * | 2005-03-01 | 2006-10-05 | X2Y Attenuators, Llc | Conditioner with coplanar conductors |
US7233051B2 (en) * | 2005-06-28 | 2007-06-19 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
KR100818632B1 (ko) * | 2005-07-26 | 2008-04-02 | 한국전자통신연구원 | 부밴드 천이 반도체 레이저 |
JP4212623B2 (ja) * | 2006-01-31 | 2009-01-21 | 三洋電機株式会社 | 撮像装置 |
KR101390426B1 (ko) | 2006-03-07 | 2014-04-30 | 엑스2와이 어테뉴에이터스, 엘.엘.씨 | 에너지 컨디셔너 구조물들 |
EP1873834B1 (de) * | 2006-06-29 | 2008-12-10 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Löschbarriere, insbesondere für einem Halbleiterdetektor, und zugehöriges Betriebsverfahren |
US7741657B2 (en) * | 2006-07-17 | 2010-06-22 | Intel Corporation | Inverted planar avalanche photodiode |
US7683397B2 (en) * | 2006-07-20 | 2010-03-23 | Intel Corporation | Semi-planar avalanche photodiode |
JP5037078B2 (ja) * | 2006-09-15 | 2012-09-26 | 富士フイルム株式会社 | 固体撮像素子およびその駆動方法 |
US7485840B2 (en) * | 2007-02-08 | 2009-02-03 | Dalsa Corporation | Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device |
WO2009019659A2 (en) * | 2007-08-08 | 2009-02-12 | Koninklijke Philips Electronics N.V. | Silicon photomultiplier readout circuitry |
CN102903782B (zh) * | 2012-10-17 | 2016-02-03 | 上海华虹宏力半导体制造有限公司 | 光电探测器及其制作方法 |
JP2021177522A (ja) * | 2020-05-08 | 2021-11-11 | 浜松ホトニクス株式会社 | 光検出装置、及び光センサの駆動方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55124259A (en) * | 1979-03-19 | 1980-09-25 | Semiconductor Res Found | Semiconductor device |
US4775798A (en) * | 1985-05-30 | 1988-10-04 | Thomson-Csf | Device for detection with time delay and phase integration |
JPH07120767B2 (ja) * | 1986-09-19 | 1995-12-20 | キヤノン株式会社 | 光電変換装置 |
US4835404A (en) * | 1986-09-19 | 1989-05-30 | Canon Kabushiki Kaisha | Photoelectric converting apparatus with a switching circuit and a resetting circuit for reading and resetting a plurality of lines sensors |
US4887134A (en) * | 1986-09-26 | 1989-12-12 | Canon Kabushiki Kaisha | Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded |
US4866293A (en) * | 1986-12-09 | 1989-09-12 | Canon Kabushiki Kaisha | Photoelectric converting apparatus to prevent the outflow of excess carriers |
US4879470A (en) * | 1987-01-16 | 1989-11-07 | Canon Kabushiki Kaisha | Photoelectric converting apparatus having carrier eliminating means |
EP0277016B1 (de) * | 1987-01-29 | 1998-04-15 | Canon Kabushiki Kaisha | Photovoltaischer Wandler |
JPH0715979B2 (ja) * | 1987-08-27 | 1995-02-22 | 三菱電機株式会社 | 超格子撮像素子 |
US5146296A (en) * | 1987-12-03 | 1992-09-08 | Xsirius Photonics, Inc. | Devices for detecting and/or imaging single photoelectron |
JPH01321707A (ja) * | 1988-06-24 | 1989-12-27 | Nec Corp | 光受信回路 |
JP2838906B2 (ja) * | 1989-08-04 | 1998-12-16 | キヤノン株式会社 | 光電変換装置 |
DE69127644T2 (de) * | 1990-03-02 | 1998-02-05 | Canon Kk | Fotoelektrische Übertragungsvorrichtung |
-
1992
- 1992-10-22 US US07/964,952 patent/US5401952A/en not_active Expired - Fee Related
- 1992-10-23 DE DE69226596T patent/DE69226596T2/de not_active Expired - Fee Related
- 1992-10-23 EP EP92118202A patent/EP0538886B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0538886A1 (de) | 1993-04-28 |
DE69226596D1 (de) | 1998-09-17 |
US5401952A (en) | 1995-03-28 |
EP0538886B1 (de) | 1998-08-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |