JP5037078B2 - 固体撮像素子およびその駆動方法 - Google Patents
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- 238000003384 imaging method Methods 0.000 title claims description 85
- 238000000034 method Methods 0.000 title claims description 38
- 238000012546 transfer Methods 0.000 claims description 154
- 230000035945 sensitivity Effects 0.000 claims description 72
- 239000012535 impurity Substances 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 40
- 230000003321 amplification Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 description 23
- 230000006870 function Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 230000000875 corresponding effect Effects 0.000 description 9
- 238000007781 pre-processing Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000001454 recorded image Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14837—Frame-interline transfer
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
14 撮像部
22 システム制御部
24 タイミング信号発生器
26 ドライバ
36 固体撮像素子
38 受光素子
40 垂直転送路
42, 42a, 42b, 44, 44a, 44b, 46, 48 転送電極
Claims (10)
- 入射光を光電変換して信号電荷を生成する受光素子と、該受光素子から読み出した信号電荷を、転送電極を介して供給される駆動信号に応じて転送する転送手段とを含み、転送した信号電荷を電気信号として読み出す固体撮像装置において、
前記信号電荷の読出しにおける前記転送電極は、前記信号電荷を転送する転送電位が印加される第1の転送電極と前記受光素子から前記信号電荷を読み出す読出し電位が印加される第2の転送電極とに分割されていて、
該装置は、タイミング信号および制御信号を基に各種の駆動信号を生成する駆動手段を含み、
該駆動手段は、前記駆動信号のうち、前記信号電荷を読み出すタイミングで第1の転送電極に印加する第1の垂直駆動信号と同時に第2の転送電極に印加する第2の垂直駆動信号を生成して、
第1の垂直駆動信号は、第2の垂直駆動信号より大きく電子増倍を生じる電位であり、第2の垂直駆動信号は、読出しゲート領域のポテンシャルが緩やかな段差を形成せず、急峻なポテンシャルの谷を形成する電位であることを特徴とする固体撮像装置。 - 請求項1に記載の固体撮像装置において、該固体撮像装置は、第2の転送電極の直下に読み出した信号電荷を一時的に滞留させる不純物拡散層が形成されることを特徴とする固体撮像装置。
- 入射光を光電変換して信号電荷を生成する受光素子と、該受光素子から読み出した信号電荷を、転送電極を介して供給される駆動信号に応じて転送する転送手段とを含み、転送した信号電荷を電気信号として読み出す固体撮像素子において、該固体撮像素子は、
前記信号電荷の読出しにおける前記転送電極の直下に読み出した信号電荷を一時的に滞留させる第1の不純物拡散層が形成され、第1の不純物拡散層を介して前記転送電極に対向する位置に、読み出した信号電荷を所定の方向に移動させる内蔵電極が形成され、
第1の不純物拡散層は、第1の不純物拡散層と異なるタイプであり、第1の不純物拡散層を上層と下層とに分ける第2の不純物拡散層を含み、
該固体撮像素子は、前記受光素子から信号電荷を前記上層に読み出す際に、前記転送電極に供給する垂直駆動信号を前記内蔵電極に印加する電荷転送信号の電圧より高い電圧で印加し、前記信号電荷を下層に移動させる際に、前記内蔵電極に印加する前記電荷転送信号を前記転送電極に印加する前記垂直駆動信号の電圧より高い電圧で印加し、読み出した信号電荷を前記上層と前記下層で往復させながら、電子増倍を発生させることを特徴とする固体撮像素子。 - 請求項3に記載の固体撮像素子において、第1の不純物拡散層はネガティブタイプであり、第2の不純物拡散層はポジティブタイプであることを特徴とする固体撮像素子。
- 入射光を光電変換して信号電荷を生成する受光素子から前記信号電荷を、供給される駆動信号に応じて転送し、転送した信号電荷を電気信号として読み出す固体撮像素子の駆動方法において、該方法は、
前記信号電荷を読み出す転送電極において、前記信号電荷を転送する第1の転送電極に供給する第1の駆動信号と、前記受光素子から前記信号電荷を読み出す第2の転送電極に供給する第2の駆動信号とを同時に印加し、
第1の駆動信号は、前記信号電荷を増やす電子増倍を発生させる際に、第2の駆動信号の電圧より高い電圧を印加し、
第2の駆動信号は、前記電子増倍時に第2の転送電極の直下にポテンシャルが緩やかな段差を形成せず、急峻なポテンシャルの谷を形成する電圧を印加することを特徴とする固体撮像素子の駆動方法。 - 請求項5に記載の方法において、該方法は、前記信号電荷の数を保って読み出す際に、第1および第2の駆動信号の電圧を等しくして、印加することを特徴とする固体撮像素子の駆動方法。
- 請求項5に記載の方法において、第1の駆動信号は、第2の駆動信号の電圧より高く、前記電子増倍を発生させる第1の区間と第2の駆動信号の電圧より低い電圧の第2の区間を有し、
該方法は、第1の区間と第2の区間の繰り返す回数を、前記電子増倍による増幅率に応じて調整して、印加することを特徴とする固体撮像素子の駆動方法。 - 請求項5に記載の方法において、第1の駆動信号は、前記入射光の入射側に形成された第1の層に読み出した信号電荷を移動させる第1の区間において、前記電子増倍を発生させる電圧で印加し、
第2の駆動信号は、第1の層に接する境界層を介した第2の層に読み出した信号電荷を移動させる第1の区間に連続した第2の区間において、前記電子増倍を発生させる電圧で印加し、
該方法は、第1の区間と第2の区間の繰り返す回数を、前記電子増倍による増幅率に応じて調整して、印加することを特徴とする固体撮像素子の駆動方法。 - 請求項7または8に記載の方法において、該方法は、撮像感度と所定の感度閾値とを比較し、判定する第1の工程と、
判定結果において前記撮像感度が前記所定の感度閾値より高い場合、第1の駆動信号を第2の駆動信号の印加電圧より高く設定する第2の工程と、
前記判定結果において前記撮像感度が前記所定の感度閾値以下の場合、第1および第2の駆動信号の印加電圧を等しく設定する第3の工程とを含む固体撮像素子の駆動方法。 - 請求項7または8に記載の方法において、該方法は、撮像感度と第1の感度閾値とを比較し、判定する第4の工程と、
第4の工程の判定結果において前記撮像感度が第1の感度閾値以下の場合、前記信号電荷の数を保つ駆動に設定する第5の工程と、
第4の工程の判定結果において前記撮像感度が前記所定の感度閾値より高い場合、前記撮像感度と第2の感度閾値とを比較し、判定する第6の工程と、
第6の工程の判定結果において前記撮像感度が第2の感度閾値以下の場合、前記電子増倍を発生させる駆動に設定する第7の工程と、
第6の工程の判定結果において前記撮像感度が第2の感度閾値より高い場合、前記電子増倍を発生させる回数を第7の工程での回数より多い駆動に設定する第8の工程とを含む固体撮像素子の駆動方法。
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JP2006251236A JP5037078B2 (ja) | 2006-09-15 | 2006-09-15 | 固体撮像素子およびその駆動方法 |
US11/896,727 US7777797B2 (en) | 2006-09-15 | 2007-09-05 | Solid-state imaging device improving S/N ratio of signals obtained by electron multiplication and a method of driving the same |
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JP2006251236A JP5037078B2 (ja) | 2006-09-15 | 2006-09-15 | 固体撮像素子およびその駆動方法 |
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JP2008072046A JP2008072046A (ja) | 2008-03-27 |
JP2008072046A5 JP2008072046A5 (ja) | 2009-04-09 |
JP5037078B2 true JP5037078B2 (ja) | 2012-09-26 |
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Families Citing this family (5)
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US7969492B2 (en) * | 2007-08-28 | 2011-06-28 | Sanyo Electric Co., Ltd. | Image pickup apparatus |
US7948536B2 (en) * | 2008-05-29 | 2011-05-24 | Sri International | Gain matching for electron multiplication imager |
JP5614993B2 (ja) * | 2010-01-19 | 2014-10-29 | キヤノン株式会社 | 撮像装置及び固体撮像素子の駆動方法 |
US8847285B2 (en) | 2011-09-26 | 2014-09-30 | Semiconductor Components Industries, Llc | Depleted charge-multiplying CCD image sensor |
JP6853652B2 (ja) * | 2016-11-07 | 2021-03-31 | キヤノン株式会社 | 放射線撮像装置、放射線撮像システム、放射線撮像装置の駆動方法およびプログラム |
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NL180157C (nl) * | 1975-06-09 | 1987-01-02 | Philips Nv | Halfgeleider beeldopneeminrichting. |
JPH04115575A (ja) * | 1990-09-05 | 1992-04-16 | Mitsubishi Electric Corp | 固体撮像素子 |
KR100298039B1 (ko) * | 1991-07-11 | 2001-10-24 | 윌리엄 비. 켐플러 | 전하증배장치및그제조방법 |
US5401952A (en) * | 1991-10-25 | 1995-03-28 | Canon Kabushiki Kaisha | Signal processor having avalanche photodiodes |
JPH08340099A (ja) | 1995-06-13 | 1996-12-24 | Matsushita Electron Corp | 固体撮像装置 |
JPH09139490A (ja) * | 1996-10-30 | 1997-05-27 | Toshiba Corp | 固体撮像装置 |
US7420605B2 (en) * | 2001-01-18 | 2008-09-02 | E2V Technologies (Uk) Limited | Solid state imager arrangements |
JP2002290836A (ja) | 2001-03-23 | 2002-10-04 | Sanyo Electric Co Ltd | 固体撮像素子及びその駆動方法 |
JP2004273640A (ja) * | 2003-03-06 | 2004-09-30 | Sony Corp | 固体撮像素子及びその製造方法 |
WO2004079825A1 (ja) * | 2003-03-06 | 2004-09-16 | Sony Corporation | 固体撮像素子及びその製造方法、並びに固体撮像素子の駆動方法 |
US7692707B2 (en) * | 2004-07-20 | 2010-04-06 | Shimadzu Corporation | Solid-state image pickup apparatus, image pickup apparatus, and image sensor |
GB0503827D0 (en) * | 2005-02-24 | 2005-04-06 | E2V Tech Uk Ltd | Enhanced spectral range imaging sensor |
GB2424758A (en) * | 2005-03-31 | 2006-10-04 | E2V Tech | CCD device |
US7485840B2 (en) * | 2007-02-08 | 2009-02-03 | Dalsa Corporation | Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device |
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US7777797B2 (en) | 2010-08-17 |
JP2008072046A (ja) | 2008-03-27 |
US20080068479A1 (en) | 2008-03-20 |
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