DE60328904D1 - Schaltungssubstrat und verfahren - Google Patents

Schaltungssubstrat und verfahren

Info

Publication number
DE60328904D1
DE60328904D1 DE60328904T DE60328904T DE60328904D1 DE 60328904 D1 DE60328904 D1 DE 60328904D1 DE 60328904 T DE60328904 T DE 60328904T DE 60328904 T DE60328904 T DE 60328904T DE 60328904 D1 DE60328904 D1 DE 60328904D1
Authority
DE
Germany
Prior art keywords
cell
semiconductor circuit
circuit substrate
detector
electrical contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328904T
Other languages
English (en)
Inventor
Kimmo Puhakka
Iain Benson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPL Intellectual Property Licensing Ltd
Original Assignee
IPL Intellectual Property Licensing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0224903A external-priority patent/GB0224903D0/en
Priority claimed from GB0224902A external-priority patent/GB0224902D0/en
Application filed by IPL Intellectual Property Licensing Ltd filed Critical IPL Intellectual Property Licensing Ltd
Application granted granted Critical
Publication of DE60328904D1 publication Critical patent/DE60328904D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
DE60328904T 2002-10-25 2003-10-27 Schaltungssubstrat und verfahren Expired - Lifetime DE60328904D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0224903A GB0224903D0 (en) 2002-10-25 2002-10-25 Circuit substrate and method
GB0224902A GB0224902D0 (en) 2002-10-25 2002-10-25 Circuit substrate and method
PCT/GB2003/004635 WO2004038810A2 (en) 2002-10-25 2003-10-27 Circuit substrate and method

Publications (1)

Publication Number Publication Date
DE60328904D1 true DE60328904D1 (de) 2009-10-01

Family

ID=32178880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328904T Expired - Lifetime DE60328904D1 (de) 2002-10-25 2003-10-27 Schaltungssubstrat und verfahren

Country Status (7)

Country Link
US (2) US7872237B2 (de)
EP (1) EP1554760B1 (de)
JP (1) JP2006504258A (de)
AT (1) ATE440383T1 (de)
AU (1) AU2003276401A1 (de)
DE (1) DE60328904D1 (de)
WO (1) WO2004038810A2 (de)

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CN108027448B (zh) 2015-10-09 2022-02-11 深圳帧观德芯科技有限公司 半导体x射线检测器的封装方法
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WO2017145816A1 (ja) * 2016-02-24 2017-08-31 ソニー株式会社 光学測定器、フローサイトメータ、および放射線計数器
US9664802B1 (en) * 2016-06-23 2017-05-30 Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R.O.C. Simplified radiation spectrum analyzer
FR3053838B1 (fr) 2016-07-08 2018-08-17 Thales Procede de fabrication de photodetecteur comprenant un empilement de couches superposees
EP3355082B1 (de) * 2017-01-27 2020-04-15 Detection Technology Oy Strahlungsdetektor-plattenanordnungsstruktur
EP3743742A4 (de) 2018-01-24 2021-07-28 Shenzhen Xpectvision Technology Co., Ltd. Verpackung von strahlungsdetektoren in einem bildsensor
WO2020085214A1 (ja) 2018-10-25 2020-04-30 株式会社 東芝 フォトンカウンティング型放射線検出器およびそれを用いた放射線検査装置
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CN114126225A (zh) * 2020-08-31 2022-03-01 庆鼎精密电子（淮安）有限公司 电路基板的制造方法、电路板及其制造方法

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Also Published As

Publication number Publication date
EP1554760B1 (de) 2009-08-19
WO2004038810A2 (en) 2004-05-06
US20080093560A1 (en) 2008-04-24
JP2006504258A (ja) 2006-02-02
EP1554760A2 (de) 2005-07-20
AU2003276401A1 (en) 2004-05-13
AU2003276401A8 (en) 2004-05-13
US8497483B2 (en) 2013-07-30
ATE440383T1 (de) 2009-09-15
WO2004038810A3 (en) 2004-06-17
US7872237B2 (en) 2011-01-18
US20110156273A1 (en) 2011-06-30

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