DE69226596D1 - Signalprozessor mit Lawinendioden - Google Patents

Signalprozessor mit Lawinendioden

Info

Publication number
DE69226596D1
DE69226596D1 DE69226596T DE69226596T DE69226596D1 DE 69226596 D1 DE69226596 D1 DE 69226596D1 DE 69226596 T DE69226596 T DE 69226596T DE 69226596 T DE69226596 T DE 69226596T DE 69226596 D1 DE69226596 D1 DE 69226596D1
Authority
DE
Germany
Prior art keywords
signal processor
avalanche diodes
avalanche
diodes
processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69226596T
Other languages
English (en)
Other versions
DE69226596T2 (de
Inventor
Shigetoshi Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69226596D1 publication Critical patent/DE69226596D1/de
Publication of DE69226596T2 publication Critical patent/DE69226596T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69226596T 1991-10-25 1992-10-23 Signalprozessor mit Lawinendioden Expired - Fee Related DE69226596T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30570391 1991-10-25
JP30570491 1991-10-25

Publications (2)

Publication Number Publication Date
DE69226596D1 true DE69226596D1 (de) 1998-09-17
DE69226596T2 DE69226596T2 (de) 1999-03-18

Family

ID=26564409

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69226596T Expired - Fee Related DE69226596T2 (de) 1991-10-25 1992-10-23 Signalprozessor mit Lawinendioden

Country Status (3)

Country Link
US (1) US5401952A (de)
EP (1) EP0538886B1 (de)
DE (1) DE69226596T2 (de)

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JPH06273796A (ja) * 1993-01-21 1994-09-30 Victor Co Of Japan Ltd 空間光変調素子
JP3441761B2 (ja) * 1993-05-28 2003-09-02 キヤノン株式会社 イメージセンサ
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
US6035013A (en) * 1994-06-01 2000-03-07 Simage O.Y. Radiographic imaging devices, systems and methods
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
US6300977B1 (en) * 1995-04-07 2001-10-09 Ifire Technology Inc. Read-out circuit for active matrix imaging arrays
JP3838665B2 (ja) * 1995-08-11 2006-10-25 株式会社 東芝 Ｍｏｓ型固体撮像装置
JP3439581B2 (ja) * 1995-10-31 2003-08-25 シャープ株式会社 固体撮像装置
US5781233A (en) * 1996-03-14 1998-07-14 Tritech Microelectronics, Ltd. MOS FET camera chip and methods of manufacture and operation thereof
US5818052A (en) * 1996-04-18 1998-10-06 Loral Fairchild Corp. Low light level solid state image sensor
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
US5844265A (en) * 1996-07-11 1998-12-01 Synaptics, Incorporated Sense amplifier for high-density imaging array
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US6603646B2 (en) * 1997-04-08 2003-08-05 X2Y Attenuators, Llc Multi-functional energy conditioner
US7301748B2 (en) 1997-04-08 2007-11-27 Anthony Anthony A Universal energy conditioning interposer with circuit architecture
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7274549B2 (en) * 2000-12-15 2007-09-25 X2Y Attenuators, Llc Energy pathway arrangements for energy conditioning
US7321485B2 (en) * 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
JP3592037B2 (ja) * 1997-05-30 2004-11-24 キヤノン株式会社 光電変換装置
KR100246358B1 (ko) * 1997-09-25 2000-03-15 김영환 전자셔터를 구비한 액티브 픽셀 센서
JPH11307756A (ja) * 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
US9029793B2 (en) 1998-11-05 2015-05-12 Siemens Aktiengesellschaft Imaging device
AU5866100A (en) * 1999-04-02 2000-11-14 Cyril Guedj Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium
JP2003504856A (ja) * 1999-07-02 2003-02-04 ディジラッド・コーポレーション 半導体装置に対する間接的裏面コンタクト
US6489618B1 (en) 1999-07-30 2002-12-03 Canon Kabushiki Kaisha Radiation image pickup device
US6359293B1 (en) * 1999-08-17 2002-03-19 Agere Systems Guardian Corp. Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
JP3493405B2 (ja) * 2000-08-31 2004-02-03 ミノルタ株式会社 固体撮像装置
CN1481603A (zh) * 2000-10-17 2004-03-10 X2Y˥�������޹�˾ 屏蔽汞齐和被屏蔽的能量路径及用于单个或多个带公共参考节点电路的其它元件
US7193831B2 (en) * 2000-10-17 2007-03-20 X2Y Attenuators, Llc Energy pathway arrangement
US6863149B2 (en) * 2000-12-12 2005-03-08 Japan Science And Technology Corporation Steering mechanism of electric car
KR20040031862A (ko) * 2002-10-04 2004-04-14 (주)그래픽테크노재팬 생산성 및 감도가 향상된 이미지 센서
GB0224689D0 (en) 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
AU2003276401A1 (en) * 2002-10-25 2004-05-13 Goldpower Limited Circuit substrate and method
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7643755B2 (en) * 2003-10-13 2010-01-05 Noble Peak Vision Corp. Optical receiver comprising a receiver photodetector integrated with an imaging array
US7180718B2 (en) * 2003-01-31 2007-02-20 X2Y Attenuators, Llc Shielded energy conditioner
DE602004016679D1 (de) * 2003-10-13 2008-10-30 Noble Peak Vision Corp Mit einem siliziumsubstrat und einem siliziumschaltkreis integrierte isolierte germanium-photodetektoren umfassender bildsensor
US7675729B2 (en) 2003-12-22 2010-03-09 X2Y Attenuators, Llc Internally shielded energy conditioner
US7817397B2 (en) 2005-03-01 2010-10-19 X2Y Attenuators, Llc Energy conditioner with tied through electrodes
KR20070107746A (ko) * 2005-03-01 2007-11-07 엑스2와이 어테뉴에이터스, 엘.엘.씨 내부 중첩된 조절기
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
KR100818632B1 (ko) * 2005-07-26 2008-04-02 한국전자통신연구원 부밴드 천이 반도체 레이저
JP4212623B2 (ja) * 2006-01-31 2009-01-21 三洋電機株式会社 撮像装置
CN101395683A (zh) 2006-03-07 2009-03-25 X2Y衰减器有限公司 能量调节装置结构
EP1873834B1 (de) * 2006-06-29 2008-12-10 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Löschbarriere, insbesondere für einem Halbleiterdetektor, und zugehöriges Betriebsverfahren
US7741657B2 (en) * 2006-07-17 2010-06-22 Intel Corporation Inverted planar avalanche photodiode
US7683397B2 (en) * 2006-07-20 2010-03-23 Intel Corporation Semi-planar avalanche photodiode
JP5037078B2 (ja) * 2006-09-15 2012-09-26 富士フイルム株式会社 固体撮像素子およびその駆動方法
US7485840B2 (en) * 2007-02-08 2009-02-03 Dalsa Corporation Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device
EP2176685A2 (de) * 2007-08-08 2010-04-21 Koninklijke Philips Electronics N.V. Ableseschaltkreis für einen silicium-bildvervielfacher
CN102903782B (zh) * 2012-10-17 2016-02-03 上海华虹宏力半导体制造有限公司 光电探测器及其制作方法
JP2021177522A (ja) * 2020-05-08 2021-11-11 浜松ホトニクス株式会社 光検出装置、及び光センサの駆動方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55124259A (en) * 1979-03-19 1980-09-25 Semiconductor Res Found Semiconductor device
US4775798A (en) * 1985-05-30 1988-10-04 Thomson-Csf Device for detection with time delay and phase integration
US4835404A (en) * 1986-09-19 1989-05-30 Canon Kabushiki Kaisha Photoelectric converting apparatus with a switching circuit and a resetting circuit for reading and resetting a plurality of lines sensors
JPH07120767B2 (ja) * 1986-09-19 1995-12-20 キヤノン株式会社 光電変換装置
US4887134A (en) * 1986-09-26 1989-12-12 Canon Kabushiki Kaisha Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
US4866293A (en) * 1986-12-09 1989-09-12 Canon Kabushiki Kaisha Photoelectric converting apparatus to prevent the outflow of excess carriers
US4879470A (en) * 1987-01-16 1989-11-07 Canon Kabushiki Kaisha Photoelectric converting apparatus having carrier eliminating means
DE3856165T2 (de) * 1987-01-29 1998-08-27 Canon Kk Photovoltaischer Wandler
JPH0715979B2 (ja) * 1987-08-27 1995-02-22 三菱電機株式会社 超格子撮像素子
US5146296A (en) * 1987-12-03 1992-09-08 Xsirius Photonics, Inc. Devices for detecting and/or imaging single photoelectron
JPH01321707A (ja) * 1988-06-24 1989-12-27 Nec Corp 光受信回路
DE69033657T2 (de) * 1989-08-04 2001-05-03 Canon K.K., Tokio/Tokyo Photoelektrischer umwandler
EP0444963B1 (de) * 1990-03-02 1997-09-17 Canon Kabushiki Kaisha Fotoelektrische Übertragungsvorrichtung

Also Published As

Publication number Publication date
DE69226596T2 (de) 1999-03-18
EP0538886B1 (de) 1998-08-12
EP0538886A1 (de) 1993-04-28
US5401952A (en) 1995-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee