CN101395683A - 能量调节装置结构 - Google Patents
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Abstract
本申请公开了一种能量调节装置结构及其制造和使用方法,其中,所述结构包括:具有第一A层、G层和第一B层的导电层的序列;其中,所述第一A层、所述G层和所述第一B层每一个都导电,并且在所述能量调节装置结构中互相导电性隔离;其中,所述第一A层包括第一A层主体和第一A层接片,所述第一B层包括第一B层主体和第一B层接片,所述G层包括G层主体和G层第一接片;其中,所述G层位于包括所述第一A层的平面和包括所述第一B层的平面之间的平面中;其中,所述第一A层和所述第一B层的至少一个的主体正对所述G层主体的部分;其中,所述第一A层接片、所述第一B层接片和所述G层第一接片的两个位于所述能量调节装置的第一侧面,所述第一A层接片、所述第一B层接片和所述G层第一接片的剩余一个位于所述能量调节装置的第二侧面,所述第二侧面正对所述第一侧面;所述方法包括供应电能到所述第一A层、所述G层和所述第一B层的其中之一。
Description
相关申请的交叉引用
【0001】本申请要求申请日2006年3月7日、代理人案号X2YA0061P-US、名称为“能量调节装置结构”的美国临时申请60/779,455的优先权。
技术领域
【0002】本发明涉及电路的能量调节。
发明内容
【0003】本发明的目的是提供电路的能量调节。
【0004】本发明提供一种能量调节装置及其制造和使用方法。所述每一个能量调节装置包括A、B、G导电结构的至少一个。每一个A、B和G导电结构分别具有一个或者多个A、B和G层。A和B结构的每一层具有至少一个接片。G导电结构的每一层具有至少两个接片。此(G导电结构的每一层的)两个接片或者相互位于能量调节装置的同一侧面上,或者相互位于能量调节装置的相对侧面上。如果G导电结构的层的两个接片相互位于能量调节装置的相对侧面上,那么G层的这两个接片的其中之一也位于能量调节装置的与A层的接片所在的同一侧面上,G层的这两个接片的其中另一个位于与B层的接片所在的同一侧面上。如果G导电结构的层的两个接片相互位于能量调节装置的同一侧面上,那么A层的接片和B层的接片二者位于能量调节装置的与G层的两个接片相对的侧面。在任一实施例中,A层的接片和B层的接片之间的层的平面距离不超过G层的两个接片之间的距离。优选地,导电结构的层的主体为矩形。优选地,所述A、B和G接片从导电结构的层的主体的相对较长的一侧延伸。
【0005】所述A、B和G导电结构的每一个的接片部分导电性地连接到同一导电结构的层的接片部分。所述导电连接导致A导电结构的所有层形成单一的导电结构,对于B和G导电结构也是这样。在分立部件的实施例中,所述接片的外围末端连接到形成能量调节装置的外表面的部分的导电材料。本发明人也构思了集成部件实施例。集成部件实施例包括集成电路内插器、集成电路PC板和半导体集成电路。在所述集成实施例中,在由所述层限定的平面内进一步延伸到其它电路的结构中形成所述A、B和G层,所述结构包括用于内插器和PC板中的其它设备的其它触头(contact),还包括集成电路中诸如二极管和晶体管的有源电路。在所述集成实施例中,包含导电材料的通路使得A层之间互相电连接,B层之间互相电连接,G层之间互相电连接。此外,在集成实施例中,A、B和G导电结构在下述的分立实施例的接片的位置连接到集成结构的导电路径。也就是说,分立实施例的接片在集成实施例中由引导A、B和G电极的主体的层叠的导电路径替代。为方便说明,在以下说明书和权利要求书中的接片或者是指图中所示接片,或者是指位于所示和描述的接片位置的集成结构的导电路径。
【0006】多个附图示出标以G、A或者B的层。G层是指形成G导电结构的部分的一个或者多个堆叠的层。A是指形成A导电结构的部分的一个或者多个堆叠的层。B是指形成B导电结构的部分的一个或者多个堆叠的层。每一结构的层A、B或者G对对齐,使得该结构的层的接片的侧面边沿表面对齐。该对齐使得沿着侧面边沿表面的导电材料可以接触A、B或者G每一导电结构的层的所对齐的侧面边沿表面,从而可以使得每一结构仅有那些层互相导电连接。
【0007】多个附图示出A、B和G层的层叠序列。本发明人构思了在单个器件中的层叠中重复这些序列集合。本发明人同样构思了在单个器件中的层叠中重复这些序列集合,其中位于所述层叠的每一端上的一个、两个或者多个G导电层将层叠的内部层夹在中间。发明人构思了使用导电材料导电性地连接到仅位于分立实施例的侧面表面上的一个或者多个A、B或者G层的接片,该导电材料延伸到顶端和底部表面或者全部围绕表面延伸以形成封闭带。
【0008】在一个方面,本发明提供能量调节装置结构及其制造和使用方法,其中所述结构包括导电层的序列,所述导电层包括第一A层、G层和第一B层;其中所述第一A层、所述G层和第一B层都是导电性的,并且在所述能量调节装置结构中互相导电隔离;其中所述第一A层包括第一A层主体和第一A层接片,所述第一B层包括第一B层主体和第一B层接片,所述G层包括G层主体和G层第一接片;其中,所述G层位于包括所述第一A层的平面和包括所述第一B层的平面之间的平面中。其中,所述第一A层和所述第一B层的至少一个的主体正对所述G层主体的部分;其中,所述第一A层接片、所述第一B层接片和所述G层第一接片的两个位于所述能量调节装置的第一侧面,所述第一A层接片、所述第一B层接片和所述G层第一接片的剩余一个位于所述能量调节装置的第二侧面,所述第二侧面正对所述第一侧面,并且使用该结构的方法包括将电能施加到所述第一A层、所述G层和所述第一B层的其中之一。
附图说明
图1A为子组件1的顶视图;
图1B为子组件20的顶视图;
图2为包括子组件1和20的组件的顶视图;
图3为组件或者结构的序列导电层已经在页面的平面内互相垂直移位的顶视图;
图3A、4A、4B和5同样为每一组件或者结构的序列导电层已经在页面的平面内互相垂直移位的顶视图;
图6为包括图3-5所示的导电层的任意序列的能量调节装置的外部透视图;
图7、7A、8和8A同样为每一组件或者结构的序列导电层已经在页面的平面内互相垂直移位的顶视图;
图9为包括图7-8所示的导电层的任意序列的能量调节装置的外部透视图;
图10-15为包括此处公开的能量调节装置的电路示意图;
图16-19同样为每一组件或者结构的序列导电层已经在页面的平面内互相垂直移位的顶视图。
具体实施方式
【0009】图1A示出包括介质层3上的导电G层2的子组件1。为方便起见,此处所示介质层用于说明A、B和G结构的相邻导电层的主体并不和不同导电结构的层导电接触。但是在通路中可以有导电材料,该通路选择性地导电连接A层到A层、B层到B层以及G层到G层。
【0010】导电G层2包括上接片4、下接片5和主体6。导电层上接片4从主体6的导电层上侧边沿表面7延伸到导电层上接片上侧边沿表面10。导电层下接片5从主体6的导电层下侧边沿表面9延伸到导电层下接片下侧边沿表面8。导电G层2位于介质层3之上。介质层3延伸到介质层上侧面12、介质层下侧面13、介质层左侧面14和介质层右侧面15并由它们限定。上接片4的上侧边沿表面10和介质层上侧边沿表面12的部分对齐。下接片5的下侧边沿表面和介质层下侧边沿表面13的部分对齐。导电层上侧边沿表面7相对于介质层上侧边沿表面12向内缩进。导电层下侧边沿表面9相对于介质层下侧边沿表面13向内缩进。导电层左侧边沿表面10相对于介质层左侧边沿表面14向内缩进。导电层右侧边沿表面11相对于介质层右侧边沿表面15向内缩进。上接片4接近导电G层2的左侧。下接片5接近导电G层2的左侧。
【0011】在集成实施例中,介质层进一步从集成结构的层的主体区域延伸,并且所述接片不必终止在所述介质层的侧面边沿。例如,从A、B或G电极的接片的位置延伸的导电线可以终止于同一集成器件内的有源或者无源电路元件的输入端。
【0012】图1B示出包括位于介质层22上的导电层21的子组件20。导电层21表示A层或者B层。导电层21包括主体23和接片24。导电层主体23包括上、左和右侧边沿表面(未编号)以及下侧边沿表面9A,它们相对于介质层22的上、下、左和右侧面向内缩进。接片24从导电层主体23的左下侧面延伸到接片侧面边沿表面25。导电层21仅有一个接片。
【0013】图1A和1B的介质层具有同样的尺寸和形状,从而在层叠时,介质层的侧面边沿表面对齐。
【0014】图2为包括子组件1和20的组件,示出介质层的侧面边沿表面的对齐,并且示出G和A或者B的导电层的主体的交迭。A或者B导电层的主体23相对于G层的较大主体6向内缩进。如侧面边沿表面9、9A所示,在页面的平面内它们之间的水平距离限定了所缩进的长度。A和B层的任何一个的主体的主要表面的表面区域小于G层主体的主要表面的表面区域。注意,导电层主体23的上、下、左和右侧表面(未编号)相对于G层2的上侧边沿表面7、下侧边沿表面9、左侧边沿表面10和右侧边沿表面11分别向内缩进。注意,接片24仅是A或者B层的一部分,其延伸超过G层的至少一个侧面边沿表面,在此例中为延伸超过G层6的侧面边沿表面9。
【0015】在非优选实施例中,G主体的尺寸等于或者小于A或者B主体的尺寸。
【0016】图2示出A或者B层的接片没有交迭G层的接片,并且示出A或者B层的接片延伸超过G层的侧面边沿表面。除非特别明确说明,图2的接片和边沿对齐、仅与同一导电结构的层交迭的不同A、B或者G的接片以及相对于G层的主体向内缩进的A或者B层的主体,用于表示以下所述的能量调节装置的导电层的层叠的对齐。
【0017】图3示出能量调节装置实施例300的按序列A、G、B的导电层的层叠。在实施例300中,G导电层接片位于G导电层主体的左上侧和右下侧。A和B导电层分别在A和B主体的右上侧和左下侧具有导电接片。A、B和G导电层的主体相对地在从左到右的方向上延伸。结果A导电结构的接片不和B或者G导电结构的接片交迭,并且B导电结构的接片不和G导电结构的接片交迭。接片也不从左侧或者右侧延伸。在层叠中,A和B导电层的主体相对于G导电层的主体向内缩进。
【0018】在可替换和非优选实施例中,A、B和G导电层的主体相对地在页面内的由顶到底方向上延伸,使得导电层的接片都位于能量调节装置的相对短的侧面上。
【0019】图3A示出能量调节装置实施例300A的从顶到底的序列A、G、B、G层叠的导电层的层叠。实施例300A具有如同实施例300的层A、G、B的同样层叠,并且在B层之下还具有另一G层。两个G层在层叠中具有同样的尺寸、形状和方向。实施例300A表示能量调节装置实施例中的附加层的情况,本发明人也可以考虑使用其它序列,诸如A、G、B、G、A、G、B等等。此外,本发明人也可以考虑使用2个、3个或者更多的G层代替一个、多个或者全部G层。
【0020】图4A示出能量调节装置实施例400A的导电层的层叠,该导电层在同一平面内具有A层和B层。一个平面内的A层的接片和另一平面内的A层的接片对齐。一个平面内的B层的接片和另一个平面内的B层的接片对齐。包含A和B层的每一平面被G层隔开。每一A层的主体和层叠中的其它A层的主体交迭。每一B层的主体和层叠中的其它B层的主体交迭。在该层叠中,A层的主体不和任一B层的主体交迭。该能量调节装置的新颖特征是接片的布置的组合,其中,在一个侧面具有两个接片、正对的侧面具有两个接片、同一平面中具有A和B层、并且A主体仅和其它A主体交迭。
【0021】图4B示出能量调节装置400B的导电层。实施例400B包括与实施例400A同样的层以及还有层叠底部的第二G导电层。与图3A一样,图4B示出发明人构思在序列A、G、B、G、A、G、B等等之后的其它附加层。
【0022】图5示出能量调节装置实施例500的序列G、A、G、B、G的导电层的层叠。实施例500具有与实施例300同样的A、G、B层的层叠以及与实施例300A同样的层叠A、G、B、G。但还示出一个优选特征,在层叠的顶部和底部存在G层。
【0023】可替换地,在层叠的顶部和底部可以存在两个或者多个G层。
【0024】图3、3A、4A、4B和5的能量调节装置实施例的新颖特征为两个G接片、A接片和B接片的布置,使得这些接片的两个位于能量调节装置的一侧,另两个接片位于能量调节装置的另一侧,并且A接片和B接片之间的距离小于或者等于两个G接片之间的距离。
【0025】图6示出与前述任一分立能量调节装置实施例的A、B和G结构导电接触的外部布置600。在全部这些实施例中,相应于外部布置600的左上和右下侧面上的G导电接触,G导电结构具有在层叠的左上和右下侧产生导电接触的接片,并且能量调节装置在页面中的从左到右方向上相比于在页面中从顶到底方向上较长。同样地,前述分立能量调节装置实施例的A和B层的接片导致外部右上侧的A导电接触和外部左下侧的B导电接触,如图6的页面的平面中所示。优选地,由应用到接片暴露边沿的材料形成导电接触,并且在足够高的温度加热之后该材料形成导电材料,此为本领域公知的常识。
【0026】标记601表示指示外部布置600的接触的布置的可视标记。标记601使得用户了解哪一个接触为A、B和G接触。如图所示,标记601位于B和G接触之间,指示右上侧接触为A接触。介质表面D形成外部布置600的外表面部分。
【0027】图7、7A、8、8A、16和17示出具有这样的接片布置的能量调节装置的导电层:G导电结构的层的两个接片从导电层的层叠的一侧延伸,A和B导电结构的层的接片从正对具有G层接片的一侧的层叠的一侧延伸。
【0028】图9示出与A、B和G结构导电接触的外部布置900的实施例,其中两个G导电结构位于能量调节装置的同一侧。诸如图7、7A、8、8A、16和17所示的实施例。在此布置中,标记601指示哪一个导电接触为A、B或者G。例如,标记“B”并且箭头指向邻接B接触。关于图16和17,G和G’标记601可以通过其位置或者标号指示哪一个是G,哪一个是G’。
【0029】图16-19示出能量调节装置的导电层,其中使用一对共面G层(称为G和G’层)代替在先实施例的单个G层。这些实施例可以包括四个独立导电结构,每一个和A、B、G和G’层的一个或者多个相关。或者是,G、G’、A和B导电层的主体外部的导电结构可将G和G’层互相导电连接,如同分立实施例中的外部带。
【0030】图16和18同样示出每一平面中存在单个A或者B层的实施例。图17和19示出存在共面A和B层的实施例。图16和17示出的实施例中,G和G’接片位于能量调节装置的一侧上,A和B电极的接片位于能量调节装置的相对一侧上。图19和图20的实施例中,G或者G’接片位于与A接片同一侧,G和G’接片的另一个位于与B接片同一侧,并且G和G’接片彼此位于能量调节装置正对侧面上。
【0031】图10-15示出包括前述任一能量调节装置的电路的电路图。在图10-15中,G1和G2表示到两个G导电结构或者到G和G’导电结构的两个导电接触。A和B表示到A和B导电结构的导电接触。Source(电源)、S、S1和S2表示电子能量的源。R表示从负载到源的回路。Load(负载)、L、L1和L2表示电能负载。P表示系统地。箭头指示从电源高电压端起始的导电通路方向。电路1-6分别指图10-15中所示的电路和部件。
【0032】在实现中,此处公开的能量调节装置实施例包括在图10-15所示电路1-6的任何一个中,并且电力从一个或者多个源施加到一个或者多个负载。能量调节装置实际上限制大于DC频率的电力传输进出电路。
【0033】优选地,A层的后移率(set back ratio)大于0.5,优选地大于1,更优地大于5。后移距离(set back distance)被定义为在层的平面中A层的边沿表面相对于相邻G层的边沿表面向内缩进的距离(例如,如图1、1A、2所示的边沿表面9和9A之间的距离),除以相邻A和G层的表面之间的最小距离。
【0034】存在于单个设备中的优选层叠配置中,A和B导电层的数量和为偶数,G导电层的数量和为奇数。
【0035】存在于单个设备中的优选层叠配置中,A和B导电层的数量和为偶数,G导电层的数量和为偶数。
【0036】存在于单个设备中的优选层叠配置中,层叠中的所有导电层的总数为奇数。
【0037】存在于单个设备中的优选层叠配置中,其G导电层为单个设备中的全部层叠的公共中心电极层,此层叠的中心G导电层一侧上的A、B和G层的数量和为偶数。
【0038】存在于单个设备中的优选层叠配置中,其A和B导电层的数量为奇数和/或G导电层的数量为偶数。
【0039】存在于单个设备中的替代的层叠配置中,其G导电层为单个设备中的全部层叠的公共中心电极层。在此层叠中,具有一个附加A、B或者G层中心G导电层的一侧上的A、B和G层的数量和大于在中心G导电层的相对一侧上的A、B和G层的数量和。
【0040】存在于单个设备中的优选层叠配置具有矩形形状,其中,A、B和G导电层接片的所有外侧边沿位于此矩形设备的一对长的、相对的一侧(相对于此矩形设备的一对短的、相对一侧)。
【0041】应该注意到,标记601代表用于指示外部布置600的接触的布置的任意类型的标记。此标记包括在用于读取人视力范围之外的标记的频谱阅读器(诸如红外阅读器等)下可视的标记。
Claims (34)
1、一种能量调节装置结构,包括:
包括第一A层、G层和第一B层的导电层的序列;
其中,所述第一A层、所述G层和所述第一B层每一个都导电,并且在所述能量调节装置结构中互相导电性隔离;
其中,所述第一A层包括第一A层主体和第一A层接片,所述第一B层包括第一B层主体和第一B层接片,所述G层包括G层主体和G层第一接片;
其中,所述G层位于包括所述第一A层的平面和包括所述第一B层的平面之间的平面中;
其中,所述第一A层和所述第一B层的至少一个的主体正对所述G层主体的部分;
其中,所述第一A层接片、所述第一B层接片和所述G层第一接片的两个位于所述能量调节装置的第一侧面,所述第一A层接片、所述第一B层接片和所述G层第一接片的剩余一个位于所述能量调节装置的第二侧面,所述第二侧面正对所述第一侧面;
其中,所述能量调节装置结构包括第四接片,并且所述第四接片为所述G层的任一部分,或者所述第四接片在所述能量调节装置结构中与所述第一A层、所述G层和所述第一B层导电性隔离;并且
其中,所述第一A层接片和所述第一B层接片之间的距离小于或者等于所述G层第一接片和所述第四接片之间的距离。
2、权利要求1的结构,其中,所述第一A层和所述第一B层二者的主体正对所述G层的主体部分,并且所述G层还包括G层第二接片,所述G层第二接片为所述第四接片。
3、权利要求2的结构,其中,所述第一A层接片、所述第一B层接片、所述G层第一接片和所述G层第二接片中的两个位于所述能量调节装置的第一侧面,并且所述第一A层接片、所述第一B层接片、所述G层第一接片和所述G层第二接片中的另外两个位于所述能量调节装置的第二侧面;并且所述第二侧面正对所述第一侧面。
4、权利要求3的结构,其中,所述G层第一接片和所述G层第二接片二者都位于所述第一侧面上。
5、权利要求3的结构,其中,所述G层第一接片位于所述第一侧面上,所述G层第二接片位于所述第二侧面上。
6、权利要求1的结构,其中,所述第一A层主体和所述第一B层主体交迭。
7、权利要求1的结构,还包括:具有第二A层主体和第二A层接片的第二A层以及具有第二B层主体和第二B层接片的第二B层;
其中,所述第一A层和所述第二B层相互位于同一平面内;
其中,所述第一B层和所述第二A层相互位于同一平面内;
其中,所述第一A层和所述第二A层与所述第一B层或者所述第二B层不交迭;
其中,所述第一A层接片和所述第二A层接片互相对齐;
其中,所述第一B层接片和所述第二B层接片互相对齐。
8、权利要求1的结构,还包括:
G’层;
其中,所述G’层导电,并且在能量调节装置中与所述第一A层、所述第一B层和所述G层导电性隔离;
其中,所述G’层包括G’主体部分和G’接片部分,并且所述G’接片部分是所述第四接片;
其中,所述G’层位于与所述G层的同一平面中;
其中,所述第一A层主体正对所述G层主体的部分;
其中,所述第一B层主体正对所述G’层主体的部分。
9、权利要求8的结构,其中,所述A层接片、所述B层接片、所述G层接片和所述G’层接片中的两个位于所述能量调节装置的第一侧面上,并且另外两个位于所述能量调节装置的第二侧面上;并且所述第二侧面正对所述第一侧面。
10、权利要求9的结构,其中,所述G层接片和所述G’层接片位于所述能量调节装置的第一侧面上,所述A层接片和所述B层接片位于所述能量调节装置的第二侧面上。
11、权利要求9的结构,其中,所述G层接片和所述A层接片位于所述能量调节装置的所述第一侧面上,所述G’层接片和所述B层接片位于所述能量调节装置的所述第二侧面上。
12、权利要求8的结构,还包括:具有第二A层主体和第二A层接片的第二A层以及具有第二B层主体和第二B层接片的第二B层;
其中,所述第一A层和所述第二B层相互在同一平面内;
其中,所述第一B层和所述第二A层相互在同一平面内;
其中,所述第一A层和所述第二A层与所述第一B层或者所述第二B层不交迭;
其中,所述第一A层接片和所述第二A层接片互相对齐;
其中,所述第一B层接片和所述第二B层接片互相对齐。
13、权利要求1的结构,还包括位于所述第一B层下方的第二G层。
14、权利要求13的结构,还包括位于所述第一A层上方的第三G层。
15、一种分立能量调节装置,包括权利要求1所述的结构。
16、一种集成能量调节装置,包括权利要求1所述的结构。
17、权利要求16的调节装置,还包括包含导电材料的通路,将多个G层互相连接。
18、一种包括上述权利要求的结构的能量调节装置的电路,其中,所述电路被配置为电路1到电路6配置的其中之一。
19、一种制造能量调节装置结构的方法,包括:
提供包括第一A层、G层和第一B层的导电层的序列;
其中,所述第一A层、所述G层和所述第一B层每一个都导电,并且在所述能量调节装置结构中互相导电性隔离;
其中,所述第一A层包括第一A层主体和第一A层接片,所述第一B层包括第一B层主体和第一B层接片,所述G层包括G层主体和G层第一接片;
其中,所述G层位于包括所述第一A层的平面和包括所述第一B层的平面之间的平面中;
其中,所述第一A层和所述第一B层的至少一个的主体正对所述G层主体的部分;
其中,所述第一A层接片、所述第一B层接片和所述G层第一接片的两个位于所述能量调节装置的第一侧面,所述第一A层接片、所述第一B层接片和所述G层第一接片的剩余一个位于所述能量调节装置的第二侧面,所述第二侧面正对所述第一侧面。
20、一种能量调节装置结构的使用方法,所述结构包括:
包括第一A层、G层和第一B层的导电层的序列;
其中,所述第一A层、所述G层和所述第一B层每一个都导电,并且在所述能量调节装置结构中互相导电性隔离;
其中,所述第一A层包括第一A层主体和第一A层接片,所述第一B层包括第一B层主体和第一B层接片,所述G层包括G层主体和G层第一接片;
其中,所述G层位于包括所述第一A层的平面和包括所述第一B层的平面之间的平面中;
其中,所述第一A层和所述第一B层的至少一个的主体正对所述G层主体的部分;
其中,所述第一A层接片、所述第一B层接片和所述G层第一接片的两个位于所述能量调节装置的第一侧面,所述第一A层接片、所述第一B层接片和所述G层第一接片的剩余一个位于所述能量调节装置的第二侧面,所述第二侧面正对所述第一侧面;
所述方法包括供应电能到所述第一A层、所述G层和所述第一B层的其中之一。
21、权利要求1的结构,其中,所述第一A层、所述第一B层和所述G层的每一个具有至少一个主要表面;
其中,所述至少一个主要表面的任一个具有表面区域;并且其中,所述G层的所述至少一个主要表面的所述表面区域大于所述第一A层的所述至少一个主要表面或者所述第一B层的所述至少一个主要表面的所述表面区域。
22、权利要求3的结构,其中,所述第一A层主体、所述第一B层主体和所述G层主体的每一个具有至少一个主要表面;
其中,所述至少一个主要表面的任一个具有表面区域;并且
其中所述G层主体的所述至少一个主要表面的所述表面区域大于所述第一A层主体的所述至少一个主要表面或者所述第一B层主体的所述至少一个主要表面的所述表面区域。
23、权利要求1的结构,其中,所述第一A层和所述第一B层中夹心所述G层。
24、权利要求3的结构,其中,所述第一A层主体和所述第一B层主体夹心所述G层主体。
25、权利要求23的结构,其中,所述G层大于所述第一A层或者所述第一B层。
26、权利要求24的结构,其中,所述G层大于所述第一A层或者所述第一B层。
27、权利要求1的结构,其中,所述G层大于所述第一A层。
28、权利要求3的结构,其中,所述G层大于所述第一B层。
29、权利要求23的结构,其中,所述G层大于所述第一A层。
30、权利要求24的结构,其中,所述G层大于所述第一B层。
31、权利要求29的结构,其中,所述第一A层在尺寸上与所述第一B层大体相同。
32、权利要求30的结构,其中,所述第一A层在尺寸上与所述第一B层大体相同。
33、权利要求21的结构,其中,所述第一A层在尺寸上与所述第一B层大体相同。
34、权利要求22的结构,其中,所述第一A层主体在尺寸上与所述第一B层主体大体相同。
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-
2007
- 2007-03-07 WO PCT/US2007/063463 patent/WO2007103965A1/en active Application Filing
- 2007-03-07 CN CNA2007800081257A patent/CN101395683A/zh active Pending
- 2007-03-07 EP EP07758051A patent/EP1991996A1/en not_active Withdrawn
- 2007-03-07 KR KR1020087021643A patent/KR101390426B1/ko not_active IP Right Cessation
- 2007-03-07 US US12/281,726 patent/US8026777B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1991996A1 (en) | 2008-11-19 |
KR20080099307A (ko) | 2008-11-12 |
US20090040686A1 (en) | 2009-02-12 |
WO2007103965A1 (en) | 2007-09-13 |
KR101390426B1 (ko) | 2014-04-30 |
US8026777B2 (en) | 2011-09-27 |
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