DE69125903D1 - Lawinenfotodiode - Google Patents
LawinenfotodiodeInfo
- Publication number
- DE69125903D1 DE69125903D1 DE69125903T DE69125903T DE69125903D1 DE 69125903 D1 DE69125903 D1 DE 69125903D1 DE 69125903 T DE69125903 T DE 69125903T DE 69125903 T DE69125903 T DE 69125903T DE 69125903 D1 DE69125903 D1 DE 69125903D1
- Authority
- DE
- Germany
- Prior art keywords
- photo diode
- avalanche photo
- avalanche
- diode
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2246592A JPH04125977A (ja) | 1990-09-17 | 1990-09-17 | ヘテロ多重構造アバランシ・フォトダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69125903D1 true DE69125903D1 (de) | 1997-06-05 |
DE69125903T2 DE69125903T2 (de) | 1997-11-20 |
Family
ID=17150713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69125903T Expired - Lifetime DE69125903T2 (de) | 1990-09-17 | 1991-09-17 | Lawinenfotodiode |
Country Status (4)
Country | Link |
---|---|
US (1) | US5432361A (de) |
EP (1) | EP0477729B1 (de) |
JP (1) | JPH04125977A (de) |
DE (1) | DE69125903T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2845081B2 (ja) * | 1993-04-07 | 1999-01-13 | 日本電気株式会社 | 半導体受光素子 |
JP3287458B2 (ja) * | 1998-06-24 | 2002-06-04 | 日本電気株式会社 | 超高速・低電圧駆動アバランシェ増倍型半導体受光素子 |
US6376858B1 (en) * | 1998-11-20 | 2002-04-23 | Hughes Electronics Corp. | Resonant tunneling diode with adjusted effective masses |
JP2001332759A (ja) | 2000-03-16 | 2001-11-30 | Matsushita Electric Ind Co Ltd | アバランシェフォトダイオード |
US6420728B1 (en) * | 2000-03-23 | 2002-07-16 | Manijeh Razeghi | Multi-spectral quantum well infrared photodetectors |
US7045833B2 (en) * | 2000-09-29 | 2006-05-16 | Board Of Regents, The University Of Texas System | Avalanche photodiodes with an impact-ionization-engineered multiplication region |
US7072557B2 (en) * | 2001-12-21 | 2006-07-04 | Infinera Corporation | InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core |
US6906358B2 (en) * | 2003-01-30 | 2005-06-14 | Epir Technologies, Inc. | Nonequilibrium photodetector with superlattice exclusion layer |
EP1990505B1 (de) | 2003-05-31 | 2010-09-22 | Cameron Systems (Ireland) Limited | Vorrichtung und Verfahren zur Rückgewinnung von Flüssigkeiten aus einem Bohrloch und/oder zum Einspritzen von Flüssigkeiten in ein Bohrloch |
US8022351B2 (en) * | 2008-02-14 | 2011-09-20 | California Institute Of Technology | Single photon detection with self-quenching multiplication |
US10128397B1 (en) * | 2012-05-21 | 2018-11-13 | The Boeing Company | Low excess noise, high gain avalanche photodiodes |
US9799689B2 (en) | 2014-11-13 | 2017-10-24 | Artilux Inc. | Light absorption apparatus |
CN107210308B (zh) | 2014-11-13 | 2018-06-29 | 光澄科技股份有限公司 | 光吸收设备 |
KR101959141B1 (ko) * | 2017-11-30 | 2019-03-15 | 주식회사 우리로 | 애벌란치 포토 다이오드 |
RU2769749C1 (ru) * | 2021-04-16 | 2022-04-05 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) | Лавинный фотодиод и способ его изготовления |
CN116705892B (zh) * | 2023-06-07 | 2024-04-23 | 北京邮电大学 | 一种雪崩二极管 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6016474A (ja) * | 1983-07-08 | 1985-01-28 | Nec Corp | ヘテロ多重接合型光検出器 |
JPS61167824A (ja) * | 1985-01-18 | 1986-07-29 | Nippon Soken Inc | 光電変換回路 |
KR900002687B1 (ko) * | 1985-12-16 | 1990-04-23 | 후지쓰가부시끼가이샤 | Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법 |
JPH0721594B2 (ja) * | 1987-01-19 | 1995-03-08 | 国際電信電話株式会社 | 光スイツチ |
JP3032209B2 (ja) * | 1988-09-30 | 2000-04-10 | 日本電信電話株式会社 | 光検出器 |
JPH0821727B2 (ja) * | 1988-11-18 | 1996-03-04 | 日本電気株式会社 | アバランシェフォトダイオード |
JP2700492B2 (ja) * | 1989-08-03 | 1998-01-21 | 日本電信電話株式会社 | アバランシェフォトダイオード |
JPH03289180A (ja) * | 1990-04-06 | 1991-12-19 | Nippon Telegr & Teleph Corp <Ntt> | アバランシ・フォトダイオード |
-
1990
- 1990-09-17 JP JP2246592A patent/JPH04125977A/ja active Pending
-
1991
- 1991-09-17 DE DE69125903T patent/DE69125903T2/de not_active Expired - Lifetime
- 1991-09-17 EP EP91115756A patent/EP0477729B1/de not_active Expired - Lifetime
-
1993
- 1993-11-08 US US08/148,429 patent/US5432361A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0477729A1 (de) | 1992-04-01 |
US5432361A (en) | 1995-07-11 |
EP0477729B1 (de) | 1997-05-02 |
DE69125903T2 (de) | 1997-11-20 |
JPH04125977A (ja) | 1992-04-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |