FR2618257B1 - Photodiode a avalanche. - Google Patents

Photodiode a avalanche.

Info

Publication number
FR2618257B1
FR2618257B1 FR888808998A FR8808998A FR2618257B1 FR 2618257 B1 FR2618257 B1 FR 2618257B1 FR 888808998 A FR888808998 A FR 888808998A FR 8808998 A FR8808998 A FR 8808998A FR 2618257 B1 FR2618257 B1 FR 2618257B1
Authority
FR
France
Prior art keywords
avalanche photodiode
avalanche
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR888808998A
Other languages
English (en)
Other versions
FR2618257A1 (fr
Inventor
Paul Perry Webb
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Inc
Original Assignee
RCA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Inc filed Critical RCA Inc
Publication of FR2618257A1 publication Critical patent/FR2618257A1/fr
Application granted granted Critical
Publication of FR2618257B1 publication Critical patent/FR2618257B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
FR888808998A 1987-07-17 1988-07-04 Photodiode a avalanche. Expired - Lifetime FR2618257B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000542375A CA1280196C (fr) 1987-07-17 1987-07-17 Photodiode avalanche

Publications (2)

Publication Number Publication Date
FR2618257A1 FR2618257A1 (fr) 1989-01-20
FR2618257B1 true FR2618257B1 (fr) 1992-02-14

Family

ID=4136098

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888808998A Expired - Lifetime FR2618257B1 (fr) 1987-07-17 1988-07-04 Photodiode a avalanche.

Country Status (6)

Country Link
US (1) US4914494A (fr)
JP (1) JPH01164075A (fr)
CA (1) CA1280196C (fr)
DE (1) DE3823546A1 (fr)
FR (1) FR2618257B1 (fr)
GB (1) GB2206998B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02202071A (ja) * 1989-01-31 1990-08-10 Toshiba Corp 半導体受光素子及びその製造方法
JPH0376275A (ja) * 1989-08-18 1991-04-02 Fujitsu Ltd 半導体受光素子
US5061973A (en) * 1990-04-27 1991-10-29 The United States Of America As Represented By The Secretary Of The Navy Semiconductor heterojunction device with graded bandgap
US6147391A (en) * 1996-05-07 2000-11-14 The Regents Of The University Of California Semiconductor hetero-interface photodetector
US6074892A (en) * 1996-05-07 2000-06-13 Ciena Corporation Semiconductor hetero-interface photodetector
US6730979B2 (en) 2002-09-12 2004-05-04 The Boeing Company Recessed p-type region cap layer avalanche photodiode
EP2175497B1 (fr) * 2008-08-12 2019-11-20 Ascatron AB Photodiode à avalanche pour la détection des photons de rayonnement ultraviolet
DE102012103699A1 (de) * 2012-02-15 2013-08-22 First Sensor AG Halbleiterstruktur für einen Strahlungsdetektor sowie Strahlungsdetektor

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2311408A1 (fr) * 1975-05-16 1976-12-10 Thomson Csf Photodiode a avalanche
JPS5252593A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving diode
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
US4442444A (en) * 1980-07-08 1984-04-10 Fujitsu Limited Avalanche photodiodes
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
JPS57198667A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
JPS58108778A (ja) * 1981-12-22 1983-06-28 Fujitsu Ltd 受光素子
JPS58114470A (ja) * 1981-12-28 1983-07-07 Fujitsu Ltd アバランシエフオトダイオ−ド
JPS58206178A (ja) * 1982-05-27 1983-12-01 Fujitsu Ltd 半導体受光装置の製造方法
JPS59151475A (ja) * 1983-02-17 1984-08-29 Kokusai Denshin Denwa Co Ltd <Kdd> バツフア層付きヘテロ構造アバランシ・ホトダイオ−ド
JPS60173880A (ja) * 1984-02-20 1985-09-07 Nec Corp 半導体受光素子およびその製造方法
CA1228663A (fr) * 1984-04-10 1987-10-27 Paul P. Webb Photodetecteur a region d'avalanche isolee
US4586066A (en) * 1984-04-10 1986-04-29 Rca Inc. Avalanche photodetector
CA1228661A (fr) * 1984-04-10 1987-10-27 Rca Inc. Photodetecteur a avalanche
JPS611064A (ja) * 1984-05-31 1986-01-07 Fujitsu Ltd 半導体受光装置
US4654678A (en) * 1985-08-30 1987-03-31 Rca, Inc. Avalanche photodiode
US4700209A (en) * 1985-10-30 1987-10-13 Rca Inc. Avalanche photodiode and a method of making same

Also Published As

Publication number Publication date
GB2206998B (en) 1990-07-11
FR2618257A1 (fr) 1989-01-20
GB8816637D0 (en) 1988-08-17
US4914494A (en) 1990-04-03
DE3823546A1 (de) 1989-01-26
GB2206998A (en) 1989-01-18
JPH01164075A (ja) 1989-06-28
CA1280196C (fr) 1991-02-12

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse