FR2311408A1 - Photodiode a avalanche - Google Patents

Photodiode a avalanche

Info

Publication number
FR2311408A1
FR2311408A1 FR7515437A FR7515437A FR2311408A1 FR 2311408 A1 FR2311408 A1 FR 2311408A1 FR 7515437 A FR7515437 A FR 7515437A FR 7515437 A FR7515437 A FR 7515437A FR 2311408 A1 FR2311408 A1 FR 2311408A1
Authority
FR
France
Prior art keywords
avalanche photodiode
avalanche
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7515437A
Other languages
English (en)
Other versions
FR2311408B1 (fr
Inventor
Baudouin De Cremoux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7515437A priority Critical patent/FR2311408A1/fr
Priority to US05/684,382 priority patent/US4037244A/en
Priority to DE19762620951 priority patent/DE2620951A1/de
Priority to GB19847/76A priority patent/GB1509144A/en
Priority to JP51054779A priority patent/JPS51140587A/ja
Publication of FR2311408A1 publication Critical patent/FR2311408A1/fr
Application granted granted Critical
Publication of FR2311408B1 publication Critical patent/FR2311408B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
FR7515437A 1975-05-16 1975-05-16 Photodiode a avalanche Granted FR2311408A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7515437A FR2311408A1 (fr) 1975-05-16 1975-05-16 Photodiode a avalanche
US05/684,382 US4037244A (en) 1975-05-16 1976-05-07 Avalanche photodiode
DE19762620951 DE2620951A1 (de) 1975-05-16 1976-05-12 Avalanche-fotodiode
GB19847/76A GB1509144A (en) 1975-05-16 1976-05-13 Avalanche photodiode
JP51054779A JPS51140587A (en) 1975-05-16 1976-05-13 Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7515437A FR2311408A1 (fr) 1975-05-16 1975-05-16 Photodiode a avalanche

Publications (2)

Publication Number Publication Date
FR2311408A1 true FR2311408A1 (fr) 1976-12-10
FR2311408B1 FR2311408B1 (fr) 1977-12-09

Family

ID=9155367

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7515437A Granted FR2311408A1 (fr) 1975-05-16 1975-05-16 Photodiode a avalanche

Country Status (5)

Country Link
US (1) US4037244A (fr)
JP (1) JPS51140587A (fr)
DE (1) DE2620951A1 (fr)
FR (1) FR2311408A1 (fr)
GB (1) GB1509144A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000373A (en) * 1977-06-27 1979-01-04 Thomson Csf Diode capable of alternately functioning as an emitter and detector of light of the same wavelength

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160985A (en) * 1977-11-25 1979-07-10 Hewlett-Packard Company Photosensing arrays with improved spatial resolution
US4276099A (en) * 1978-10-11 1981-06-30 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Fabrication of infra-red charge coupled devices
JPS55162280A (en) * 1979-06-01 1980-12-17 Mitsubishi Electric Corp Photodiode
JPS5721876A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor
JPS57198668A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
CA1280196C (fr) * 1987-07-17 1991-02-12 Paul Perry Webb Photodiode avalanche
US5554882A (en) * 1993-11-05 1996-09-10 The Boeing Company Integrated trigger injector for avalanche semiconductor switch devices
JP4949053B2 (ja) * 2007-02-06 2012-06-06 中澤 直継 配電ダクト

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode
FR2252653B1 (fr) * 1973-11-28 1976-10-01 Thomson Csf

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
*REVUE GB "ELECTRONIC ENGINEERING" VOL. 42, NO. 507, MAI 1970: "ION DOPING OF SEMICONDUCTORS" H.HEYS PAGES 74 A 76 *
*REVUE US: "I.E.E.E. TRANSACTIONS ON ELECTRON DEVICES" VOL. ED-19, NO. 6, JUIN 1972 "THE DISTRIBUTION OF GAINS IN UNIFORMLY MULTIPLYING AVALANCHE PHOTODIODES: EXPERIMENTAL". J.CONRADI PAGES 713-718) *
REVUE US "I.E.E.E. TRANSACTIONS ON ELECTRON DEVICES" VOL. ED-14, NO. 5, MAI 1967: "A MODEL OF THE AVALANCHE PHOTODIODE" J.R.BIARD ET AL. PAGES 233-238 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000373A (en) * 1977-06-27 1979-01-04 Thomson Csf Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
GB2000373B (en) * 1977-06-27 1982-04-07 Thomson Csf A diode capable of alternately functioning as an emitter and detector of light of the same wavelength

Also Published As

Publication number Publication date
US4037244A (en) 1977-07-19
FR2311408B1 (fr) 1977-12-09
GB1509144A (en) 1978-04-26
DE2620951A1 (de) 1976-11-25
JPS51140587A (en) 1976-12-03

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Legal Events

Date Code Title Description
ST Notification of lapse