BE843134A - Detecteur opto-electronique - Google Patents

Detecteur opto-electronique

Info

Publication number
BE843134A
BE843134A BE168081A BE168081A BE843134A BE 843134 A BE843134 A BE 843134A BE 168081 A BE168081 A BE 168081A BE 168081 A BE168081 A BE 168081A BE 843134 A BE843134 A BE 843134A
Authority
BE
Belgium
Prior art keywords
opto
electronic detector
detector
electronic
Prior art date
Application number
BE168081A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE843134A publication Critical patent/BE843134A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
BE168081A 1975-06-20 1976-06-18 Detecteur opto-electronique BE843134A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2527657A DE2527657C3 (de) 1975-06-20 1975-06-20 Optoelektronischer Sensor und Verfahren zu seinem Betrieb

Publications (1)

Publication Number Publication Date
BE843134A true BE843134A (fr) 1976-10-18

Family

ID=5949589

Family Applications (1)

Application Number Title Priority Date Filing Date
BE168081A BE843134A (fr) 1975-06-20 1976-06-18 Detecteur opto-electronique

Country Status (7)

Country Link
US (1) US4131810A (fr)
BE (1) BE843134A (fr)
DE (1) DE2527657C3 (fr)
FR (1) FR2316743A1 (fr)
GB (1) GB1520965A (fr)
IT (1) IT1067007B (fr)
NL (1) NL7606665A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450464A (en) * 1980-07-23 1984-05-22 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus having a charge transfer arrangement
JPS5919480A (ja) * 1982-07-26 1984-01-31 Olympus Optical Co Ltd 固体撮像装置
JPH0681280B2 (ja) * 1984-06-06 1994-10-12 日本電気株式会社 電荷結合素子の駆動法
US4716447A (en) * 1985-09-20 1987-12-29 Rca Corporation Interrupting charge integration in semiconductor imagers exposed to radiant energy
JP3366634B2 (ja) * 1991-12-03 2003-01-14 マサチユーセツツ・インステイテユート・オブ・テクノロジー 電荷結合デバイス用集積化電子シャッタ
US5270558A (en) * 1991-12-03 1993-12-14 Massachusetts Institute Of Technology Integrated electronic shutter for charge-coupled devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576392A (en) * 1968-06-26 1971-04-27 Rca Corp Semiconductor vidicon target having electronically alterable light response characteristics
US3796927A (en) * 1970-12-16 1974-03-12 Bell Telephone Labor Inc Three dimensional charge coupled devices
US3686644A (en) * 1971-04-29 1972-08-22 Alton O Christensen Gated diode memory
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3906543A (en) * 1971-12-23 1975-09-16 Bell Telephone Labor Inc Solid state imaging apparatus employing charge transfer devices
US3771149A (en) * 1971-12-30 1973-11-06 Texas Instruments Inc Charge coupled optical scanner
US3792197A (en) * 1972-07-31 1974-02-12 Bell Telephone Labor Inc Solid-state diode array camera tube having electronic control of light sensitivity
US3863065A (en) * 1972-10-02 1975-01-28 Rca Corp Dynamic control of blooming in charge coupled, image-sensing arrays
US3896485A (en) * 1973-12-03 1975-07-22 Fairchild Camera Instr Co Charge-coupled device with overflow protection
US3996600A (en) * 1975-07-10 1976-12-07 International Business Machines Corporation Charge coupled optical scanner with blooming control

Also Published As

Publication number Publication date
FR2316743A1 (fr) 1977-01-28
FR2316743B1 (fr) 1979-10-12
GB1520965A (en) 1978-08-09
US4131810A (en) 1978-12-26
DE2527657B2 (de) 1978-12-21
NL7606665A (nl) 1976-12-22
IT1067007B (it) 1985-03-12
DE2527657A1 (de) 1976-12-23
DE2527657C3 (de) 1979-08-23

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