DE3587973D1 - Fotodetektor. - Google Patents

Fotodetektor.

Info

Publication number
DE3587973D1
DE3587973D1 DE3587973T DE3587973T DE3587973D1 DE 3587973 D1 DE3587973 D1 DE 3587973D1 DE 3587973 T DE3587973 T DE 3587973T DE 3587973 T DE3587973 T DE 3587973T DE 3587973 D1 DE3587973 D1 DE 3587973D1
Authority
DE
Germany
Prior art keywords
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3587973T
Other languages
English (en)
Other versions
DE3587973T2 (de
Inventor
Charles Thomas Elliott
Timothy Ashley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Application granted granted Critical
Publication of DE3587973D1 publication Critical patent/DE3587973D1/de
Publication of DE3587973T2 publication Critical patent/DE3587973T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
DE3587973T 1984-07-06 1985-06-07 Fotodetektor. Expired - Lifetime DE3587973T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB848417303A GB8417303D0 (en) 1984-07-06 1984-07-06 Infra-red detector

Publications (2)

Publication Number Publication Date
DE3587973D1 true DE3587973D1 (de) 1995-02-23
DE3587973T2 DE3587973T2 (de) 1995-06-08

Family

ID=10563528

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3587973T Expired - Lifetime DE3587973T2 (de) 1984-07-06 1985-06-07 Fotodetektor.

Country Status (5)

Country Link
US (1) US5016073A (de)
EP (1) EP0167305B1 (de)
JP (1) JP2571760B2 (de)
DE (1) DE3587973T2 (de)
GB (1) GB8417303D0 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8828348D0 (en) * 1988-12-05 1989-01-05 Secr Defence Photodetector
GB9100351D0 (en) * 1991-01-08 1991-02-20 Secr Defence Semiconductor heterostructure device
USRE38582E1 (en) 1995-10-05 2004-09-14 Qinetiq Limited Semiconductor diode with suppression of auger generation processes
GB9520324D0 (en) * 1995-10-05 1995-12-06 Secr Defence Improved auger suppressed device
GB9623704D0 (en) 1996-11-14 1997-01-08 Secr Defence Infra-red detector
GB9814462D0 (en) * 1998-07-04 1998-09-02 Secr Defence Infrared light emitting diodes
GB2362506A (en) 2000-05-19 2001-11-21 Secr Defence Field effect transistor with an InSb quantum well and minority carrier extraction
US6603184B2 (en) 2000-09-06 2003-08-05 Applied Optoelectronics, Inc. Double heterostructure photodiode with graded minority-carrier blocking structures
AUPR174800A0 (en) * 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
EP1461834A4 (de) * 2001-11-29 2010-06-09 Origin Energy Solar Pty Ltd Halbleiter-texturierungsprozess
EP1470574B9 (de) * 2002-02-01 2017-04-12 Picometrix, LLC Schnelle photodiode mit erhöhter empfindlichkeit
JP2003240861A (ja) * 2002-02-20 2003-08-27 Canon Inc 放射線検出素子、放射線撮像装置及び放射線検出方法
US20040109692A1 (en) * 2002-12-09 2004-06-10 James Plante FSO communication systems having high performance detectors
US6906358B2 (en) * 2003-01-30 2005-06-14 Epir Technologies, Inc. Nonequilibrium photodetector with superlattice exclusion layer
IL156744A (en) * 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
EP2023398B9 (de) * 2003-09-09 2015-02-18 Asahi Kasei EMD Corporation Infrarotsensor-IC und Infrarotsensor und Herstellungsverfahren dafür
US20050056829A1 (en) * 2003-09-17 2005-03-17 Green Michael C. Reducing dark current of photoconductor using heterojunction that maintains high x-ray sensitivity
EP1624284B1 (de) 2004-07-29 2017-07-19 STMicroelectronics Srl Mikroelektromechanischer hochempfindlicher Inertialsensor und dessen Herstellungsverfahren
US7368762B2 (en) * 2005-01-06 2008-05-06 Teledyne Licensing, Llc Heterojunction photodiode
US7459730B1 (en) * 2005-09-20 2008-12-02 Drs Sensors & Targeting Systems, Inc. Separate absorption and detection diode for VLWIR
AT503818B1 (de) * 2006-07-27 2008-01-15 Univ Linz Vorrichtung zum umwandeln infraroter strahlung in elektrischen strom
US7821807B2 (en) * 2008-04-17 2010-10-26 Epir Technologies, Inc. Nonequilibrium photodetectors with single carrier species barriers
JP5522932B2 (ja) * 2008-12-25 2014-06-18 キヤノン株式会社 光電変換装置及び光電変換装置の駆動方法
WO2015171572A1 (en) * 2014-05-05 2015-11-12 Trustees Of Boston University Dark current mitigation with diffusion control
CN108207117B (zh) * 2015-07-28 2022-04-19 罗切斯特大学 低暗电流、谐振腔增强的红外光电探测器
FR3041815B1 (fr) 2015-09-25 2020-02-21 Thales Photodetecteur comprenant un empilement de couches superposees
US10490687B2 (en) * 2018-01-29 2019-11-26 Waymo Llc Controlling detection time in photodetectors

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1023833A (en) * 1974-03-01 1978-01-03 Henry Kressel Optical radiation detector and method of making the same
JPS5112998A (de) * 1974-07-18 1976-01-31 Nobuki Nagasawa
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride
FR2363197A1 (fr) * 1976-08-23 1978-03-24 Ibm Structure de photo-diode amelioree donnant une reponse en couleur bleue renforcee
US4144540A (en) * 1978-02-06 1979-03-13 The United States Of America As Represented By The Secretary Of The Navy Tunable infrared detector with narrow bandwidth
US4273596A (en) * 1978-10-03 1981-06-16 The United States Of America As Represented By The Secretary Of The Army Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager
JPS55151225A (en) * 1979-04-25 1980-11-25 Gen Electric Radiation ray detector
JPS55144512A (en) * 1979-04-25 1980-11-11 Gen Electric Radiation detector
DE2927126A1 (de) * 1979-07-05 1981-01-08 Standard Elektrik Lorenz Ag Photodiode
US4250516A (en) * 1979-08-06 1981-02-10 Bell Telephone Laboratories, Incorporated Multistage avalanche photodetector
US4415370A (en) * 1979-09-28 1983-11-15 Fujitsu Limited Method of beryllium implantation in germanium substrate
US4357620A (en) * 1980-11-18 1982-11-02 The United States Of America As Represented By The Secretary Of The Army Liquid-phase epitaxial growth of cdTe on HgCdTe
US4341918A (en) * 1980-12-24 1982-07-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High voltage planar multijunction solar cell
US4376659A (en) * 1981-06-01 1983-03-15 Texas Instruments Incorporated Process for forming semiconductor alloys having a desired bandgap
SE8103798L (sv) * 1981-06-17 1982-12-18 Asea Ab Fotodiod for spektralanalys
EP0068652B1 (de) * 1981-06-24 1988-05-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Photodioden
DE3379441D1 (en) * 1982-09-23 1989-04-20 Secr Defence Brit Infrared detectors

Also Published As

Publication number Publication date
EP0167305A2 (de) 1986-01-08
JPS6126269A (ja) 1986-02-05
GB8417303D0 (en) 1984-08-08
JP2571760B2 (ja) 1997-01-16
EP0167305A3 (en) 1987-09-16
DE3587973T2 (de) 1995-06-08
EP0167305B1 (de) 1995-01-11
US5016073A (en) 1991-05-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QINETIQ LTD., LONDON, GB