SE8103798L - Fotodiod for spektralanalys - Google Patents
Fotodiod for spektralanalysInfo
- Publication number
- SE8103798L SE8103798L SE8103798A SE8103798A SE8103798L SE 8103798 L SE8103798 L SE 8103798L SE 8103798 A SE8103798 A SE 8103798A SE 8103798 A SE8103798 A SE 8103798A SE 8103798 L SE8103798 L SE 8103798L
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- spectral analysis
- layers
- bias
- extend
- Prior art date
Links
- 238000010183 spectrum analysis Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000003595 spectral effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8103798A SE8103798L (sv) | 1981-06-17 | 1981-06-17 | Fotodiod for spektralanalys |
| DE19823221335 DE3221335A1 (de) | 1981-06-17 | 1982-06-05 | Fotodiode zur spektralanalyse |
| JP57101495A JPS57211788A (en) | 1981-06-17 | 1982-06-15 | Photodiode for analyzing spectrum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8103798A SE8103798L (sv) | 1981-06-17 | 1981-06-17 | Fotodiod for spektralanalys |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE8103798L true SE8103798L (sv) | 1982-12-18 |
Family
ID=20344082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8103798A SE8103798L (sv) | 1981-06-17 | 1981-06-17 | Fotodiod for spektralanalys |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS57211788A (sv) |
| DE (1) | DE3221335A1 (sv) |
| SE (1) | SE8103798L (sv) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8417303D0 (en) * | 1984-07-06 | 1984-08-08 | Secr Defence | Infra-red detector |
| DE3736203A1 (de) * | 1987-10-26 | 1989-05-03 | Siemens Ag | Verfahren zum betrieb einer spektrometerdiode |
| DE10019089C1 (de) * | 2000-04-12 | 2001-11-22 | Epigap Optoelektronik Gmbh | Wellenlängenselektive pn-Übergangs-Photodiode |
-
1981
- 1981-06-17 SE SE8103798A patent/SE8103798L/sv not_active Application Discontinuation
-
1982
- 1982-06-05 DE DE19823221335 patent/DE3221335A1/de not_active Withdrawn
- 1982-06-15 JP JP57101495A patent/JPS57211788A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE3221335A1 (de) | 1983-01-05 |
| JPS57211788A (en) | 1982-12-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |
Ref document number: 8103798-8 |