JPS53142886A - Radiation detector of semiconductor - Google Patents
Radiation detector of semiconductorInfo
- Publication number
- JPS53142886A JPS53142886A JP5807477A JP5807477A JPS53142886A JP S53142886 A JPS53142886 A JP S53142886A JP 5807477 A JP5807477 A JP 5807477A JP 5807477 A JP5807477 A JP 5807477A JP S53142886 A JPS53142886 A JP S53142886A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- radiation detector
- carrier
- detect
- longer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To detect the electromotive force with the incident radiant rays without external bias, by providing a rectifying junction layer having the pattern of the distance less than the carrier diffusion length on one side of a semiconductor single crystal plate high in specific resistivity and longer in the carrier life and an ohmic contact layer on another.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52058074A JPS5841666B2 (en) | 1977-05-19 | 1977-05-19 | semiconductor radiation detector |
GB5710/78A GB1559664A (en) | 1977-02-17 | 1978-02-13 | Semiconductor radiation detector |
US05/877,942 US4210805A (en) | 1977-02-17 | 1978-02-15 | Semiconductor radiation detector |
DE19782806858 DE2806858A1 (en) | 1977-02-17 | 1978-02-17 | SEMICONDUCTOR RADIATION DETECTOR |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52058074A JPS5841666B2 (en) | 1977-05-19 | 1977-05-19 | semiconductor radiation detector |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53142886A true JPS53142886A (en) | 1978-12-12 |
JPS5841666B2 JPS5841666B2 (en) | 1983-09-13 |
Family
ID=13073757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52058074A Expired JPS5841666B2 (en) | 1977-02-17 | 1977-05-19 | semiconductor radiation detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5841666B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0175369A2 (en) * | 1984-09-19 | 1986-03-26 | Fuji Electric Co., Ltd. | Semiconductor radiation detector |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6379276U (en) * | 1986-11-13 | 1988-05-25 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5212031A (en) * | 1975-07-15 | 1977-01-29 | Sato Kenkyusho | Printer |
-
1977
- 1977-05-19 JP JP52058074A patent/JPS5841666B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5212031A (en) * | 1975-07-15 | 1977-01-29 | Sato Kenkyusho | Printer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0175369A2 (en) * | 1984-09-19 | 1986-03-26 | Fuji Electric Co., Ltd. | Semiconductor radiation detector |
Also Published As
Publication number | Publication date |
---|---|
JPS5841666B2 (en) | 1983-09-13 |
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