JPS53142886A - Radiation detector of semiconductor - Google Patents

Radiation detector of semiconductor

Info

Publication number
JPS53142886A
JPS53142886A JP5807477A JP5807477A JPS53142886A JP S53142886 A JPS53142886 A JP S53142886A JP 5807477 A JP5807477 A JP 5807477A JP 5807477 A JP5807477 A JP 5807477A JP S53142886 A JPS53142886 A JP S53142886A
Authority
JP
Japan
Prior art keywords
semiconductor
radiation detector
carrier
detect
longer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5807477A
Other languages
Japanese (ja)
Other versions
JPS5841666B2 (en
Inventor
Noboru Matsuo
Tetsuji Kobayashi
Toru Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52058074A priority Critical patent/JPS5841666B2/en
Priority to GB5710/78A priority patent/GB1559664A/en
Priority to US05/877,942 priority patent/US4210805A/en
Priority to DE19782806858 priority patent/DE2806858A1/en
Publication of JPS53142886A publication Critical patent/JPS53142886A/en
Publication of JPS5841666B2 publication Critical patent/JPS5841666B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To detect the electromotive force with the incident radiant rays without external bias, by providing a rectifying junction layer having the pattern of the distance less than the carrier diffusion length on one side of a semiconductor single crystal plate high in specific resistivity and longer in the carrier life and an ohmic contact layer on another.
JP52058074A 1977-02-17 1977-05-19 semiconductor radiation detector Expired JPS5841666B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP52058074A JPS5841666B2 (en) 1977-05-19 1977-05-19 semiconductor radiation detector
GB5710/78A GB1559664A (en) 1977-02-17 1978-02-13 Semiconductor radiation detector
US05/877,942 US4210805A (en) 1977-02-17 1978-02-15 Semiconductor radiation detector
DE19782806858 DE2806858A1 (en) 1977-02-17 1978-02-17 SEMICONDUCTOR RADIATION DETECTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52058074A JPS5841666B2 (en) 1977-05-19 1977-05-19 semiconductor radiation detector

Publications (2)

Publication Number Publication Date
JPS53142886A true JPS53142886A (en) 1978-12-12
JPS5841666B2 JPS5841666B2 (en) 1983-09-13

Family

ID=13073757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52058074A Expired JPS5841666B2 (en) 1977-02-17 1977-05-19 semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS5841666B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0175369A2 (en) * 1984-09-19 1986-03-26 Fuji Electric Co., Ltd. Semiconductor radiation detector

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6379276U (en) * 1986-11-13 1988-05-25

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212031A (en) * 1975-07-15 1977-01-29 Sato Kenkyusho Printer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212031A (en) * 1975-07-15 1977-01-29 Sato Kenkyusho Printer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0175369A2 (en) * 1984-09-19 1986-03-26 Fuji Electric Co., Ltd. Semiconductor radiation detector

Also Published As

Publication number Publication date
JPS5841666B2 (en) 1983-09-13

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