JPS5660067A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- JPS5660067A JPS5660067A JP13623479A JP13623479A JPS5660067A JP S5660067 A JPS5660067 A JP S5660067A JP 13623479 A JP13623479 A JP 13623479A JP 13623479 A JP13623479 A JP 13623479A JP S5660067 A JPS5660067 A JP S5660067A
- Authority
- JP
- Japan
- Prior art keywords
- back surface
- detecting elements
- substrate
- electrodes
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 229920005749 polyurethane resin Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To enable the measurement of the two-dimensional distribution of radiant rays by forming front and back surface electrodes independently on a semiconductor substrate and thus forming a plurality of radiation detecting elements. CONSTITUTION:A thin silicon oxide film 12 is formed on the surface of the N type silicon substrate 11, and polyurethane resin insularing films 13, 14 are covered on both the front surface and the back surface of the substrate. Holes disposed in two- dimension are formed at the positions confronting between the films 13 and 14, thereafter back surface electrode 16 contacting the substrate 11 and the front surface electrode 16 contacting the silicon oxide film are formed at the holes, and a plurality of radiation detecting elements of MIS diode is formed. Since the front and back surface electrodes 15, 16 are independently formed for the respective detecting elements, the electrodes operate as independent detecting elements, and two-dimensional distribution can be thus measured in the radiant rays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13623479A JPS5660067A (en) | 1979-10-22 | 1979-10-22 | Semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13623479A JPS5660067A (en) | 1979-10-22 | 1979-10-22 | Semiconductor radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5660067A true JPS5660067A (en) | 1981-05-23 |
Family
ID=15170412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13623479A Pending JPS5660067A (en) | 1979-10-22 | 1979-10-22 | Semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5660067A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6135173A (en) * | 1998-03-03 | 2000-10-24 | Samsung Electronics Co., Ltd. | Ice dispenser for refrigerator |
| EP1069627A1 (en) * | 1999-07-16 | 2001-01-17 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Sensor for low energy particles |
| US8713960B2 (en) | 2008-05-30 | 2014-05-06 | Hitachi Appliances, Inc. | Ice supplying apparatus and refrigerator having the same |
-
1979
- 1979-10-22 JP JP13623479A patent/JPS5660067A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6135173A (en) * | 1998-03-03 | 2000-10-24 | Samsung Electronics Co., Ltd. | Ice dispenser for refrigerator |
| EP1069627A1 (en) * | 1999-07-16 | 2001-01-17 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Sensor for low energy particles |
| FR2796493A1 (en) * | 1999-07-16 | 2001-01-19 | Suisse Electronique Microtech | LOW ENERGY PARTICLE SENSOR |
| US8713960B2 (en) | 2008-05-30 | 2014-05-06 | Hitachi Appliances, Inc. | Ice supplying apparatus and refrigerator having the same |
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