JPS57201085A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- JPS57201085A JPS57201085A JP56085504A JP8550481A JPS57201085A JP S57201085 A JPS57201085 A JP S57201085A JP 56085504 A JP56085504 A JP 56085504A JP 8550481 A JP8550481 A JP 8550481A JP S57201085 A JPS57201085 A JP S57201085A
- Authority
- JP
- Japan
- Prior art keywords
- region
- depletion layer
- relative resistance
- semiconductor
- sensitivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000005855 radiation Effects 0.000 title abstract 3
- 230000035945 sensitivity Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To acquire a semiconductor radiation detector with no difference in sensitivity, even if there is a difference in relative resistance in semiconductor material, by providing a barrier where a semiconductor plate surrounding with an interval has the same conductivity with its inner region and the lower relative resistance. CONSTITUTION:A P(+) region 6 is provided to surround an N(+) layer of a P type silicon substrate 1. The P(+) region 6 is provided at a position where a depletion layer stops extending at the P(+) region 6, when voltage is reversed between P and N(+) layers. Namely, the depletion layer extends to as far as the P(+) region in the P region by VA application. Therefore, the depletion layer is not effected on extending, even if the relative resistance is higher. A constant depletion layer range is always formed, and there is no variation in sensitivity. Such a detector 11 is connected to a power supply 12 and converts current at the reception of incoming radiation into an output signal through an amplifier 13 by a signal processor 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56085504A JPS57201085A (en) | 1981-06-03 | 1981-06-03 | Semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56085504A JPS57201085A (en) | 1981-06-03 | 1981-06-03 | Semiconductor radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57201085A true JPS57201085A (en) | 1982-12-09 |
Family
ID=13860756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56085504A Pending JPS57201085A (en) | 1981-06-03 | 1981-06-03 | Semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57201085A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100545801B1 (en) * | 1997-02-10 | 2006-04-21 | 필 팩토리 | Electromagnetic radiation detectors, high sensitivity pixel structures using such detectors and methods of manufacturing such detectors. |
| JP2012054421A (en) * | 2010-09-01 | 2012-03-15 | Lapis Semiconductor Co Ltd | Semiconductor device |
-
1981
- 1981-06-03 JP JP56085504A patent/JPS57201085A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100545801B1 (en) * | 1997-02-10 | 2006-04-21 | 필 팩토리 | Electromagnetic radiation detectors, high sensitivity pixel structures using such detectors and methods of manufacturing such detectors. |
| JP2012054421A (en) * | 2010-09-01 | 2012-03-15 | Lapis Semiconductor Co Ltd | Semiconductor device |
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