NL7611138A - Photosensitive detector device in magneto=optical memory - has semiconductor body with electrode generating charges in depletion layer which drift to detector - Google Patents

Photosensitive detector device in magneto=optical memory - has semiconductor body with electrode generating charges in depletion layer which drift to detector

Info

Publication number
NL7611138A
NL7611138A NL7611138A NL7611138A NL7611138A NL 7611138 A NL7611138 A NL 7611138A NL 7611138 A NL7611138 A NL 7611138A NL 7611138 A NL7611138 A NL 7611138A NL 7611138 A NL7611138 A NL 7611138A
Authority
NL
Netherlands
Prior art keywords
depletion layer
magneto
optical memory
drift
charge
Prior art date
Application number
NL7611138A
Other languages
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7611138A priority Critical patent/NL7611138A/en
Publication of NL7611138A publication Critical patent/NL7611138A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements

Abstract

A photosensitive element and circuit operate in the charge transfer and charge storage mode. There is a relatively wide photosensitive area for the detection or measurement of small photon densities down to the order of 1012 photons per cm2 per second. It is suitable for use as photodetector in a magneto-optical memory system. The sensitive element forms part of a semiconductor substrate of one conductivity type with an electrode layer separated by an isolating layer from it in which mobile charge carriers can be generted by the indident radiation, the whole forming a charge transfer structure in which by application of a bias potential to the electrode layer a depletion layer can be formed. Means are provided to generate a drift field in the depletion layer so that the light-generated electrons move to the edge in the drift field where means are provided to produce a charge accumulation zone to collect the charges and detect their presence.
NL7611138A 1976-10-08 1976-10-08 Photosensitive detector device in magneto=optical memory - has semiconductor body with electrode generating charges in depletion layer which drift to detector NL7611138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL7611138A NL7611138A (en) 1976-10-08 1976-10-08 Photosensitive detector device in magneto=optical memory - has semiconductor body with electrode generating charges in depletion layer which drift to detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7611138A NL7611138A (en) 1976-10-08 1976-10-08 Photosensitive detector device in magneto=optical memory - has semiconductor body with electrode generating charges in depletion layer which drift to detector

Publications (1)

Publication Number Publication Date
NL7611138A true NL7611138A (en) 1978-04-11

Family

ID=19827019

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7611138A NL7611138A (en) 1976-10-08 1976-10-08 Photosensitive detector device in magneto=optical memory - has semiconductor body with electrode generating charges in depletion layer which drift to detector

Country Status (1)

Country Link
NL (1) NL7611138A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003219A1 (en) * 1977-12-19 1979-08-08 General Electric Company Radiation sensing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003219A1 (en) * 1977-12-19 1979-08-08 General Electric Company Radiation sensing device

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Legal Events

Date Code Title Description
BV The patent application has lapsed