JPS56151377A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS56151377A
JPS56151377A JP5562580A JP5562580A JPS56151377A JP S56151377 A JPS56151377 A JP S56151377A JP 5562580 A JP5562580 A JP 5562580A JP 5562580 A JP5562580 A JP 5562580A JP S56151377 A JPS56151377 A JP S56151377A
Authority
JP
Japan
Prior art keywords
region
electrode
measurement
substrate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5562580A
Other languages
Japanese (ja)
Inventor
Yujiro Naruse
Toru Sugita
Tetsuji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5562580A priority Critical patent/JPS56151377A/en
Publication of JPS56151377A publication Critical patent/JPS56151377A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enable the measurement of the two dimensional strength distribution of the radiation flux with a simple signal processing circuit by dividing the surface of a semiconductor substrate into a plurality of regions with insulating films and setting a surface electrode in each region independently. CONSTITUTION:A thin silicon oxide film 12 approximately less than 100Angstrom is formed on the surface of a N type silicon substrate 11, and divided into a plurality of element regions covering with an insulating film 13 selectively thereon. A surface electrode 14 is deposited with vaporization on each surface in each region, whereby a plurality of radiation detecting elements consisting of a MIS tunnel diode are formed. On the insulating film 13, a conductor 15 connected with a signal take-out lead 16 is set being adjacent to each element region and brought into contact with each electrode surface 14. Then, the radiant ray is made incident on the back surface of the substrate 11 convered with a back side electrodes 17 of aluminium etc. on the whole surface, and measurement is performed. Thereby, the distribution of the two dimensional strength of the radiation flux can be measured with each and high density integration of the detecting element is made feasible.
JP5562580A 1980-04-26 1980-04-26 Semiconductor radiation detector Pending JPS56151377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5562580A JPS56151377A (en) 1980-04-26 1980-04-26 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5562580A JPS56151377A (en) 1980-04-26 1980-04-26 Semiconductor radiation detector

Publications (1)

Publication Number Publication Date
JPS56151377A true JPS56151377A (en) 1981-11-24

Family

ID=13003954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5562580A Pending JPS56151377A (en) 1980-04-26 1980-04-26 Semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS56151377A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940285A (en) * 1982-08-31 1984-03-05 Fujitsu Ltd Apparatus for measuring x-ray spectrum
JPS60135884A (en) * 1983-12-26 1985-07-19 Shimadzu Corp Semiconductor radiation position detecting apparatus
JPS62100679A (en) * 1985-10-28 1987-05-11 Hitachi Medical Corp Detector for x-ray ct equipment
US4700076A (en) * 1983-09-02 1987-10-13 Digital Imaging Company Of America, Inc. Solid-state X-ray receptor and method of making same
JPH0411483U (en) * 1990-05-21 1992-01-30
EP1069627A1 (en) * 1999-07-16 2001-01-17 CSEM Centre Suisse d'Electronique et de Microtechnique SA Sensor for low energy particles
JP2012023235A (en) * 2010-07-15 2012-02-02 Hitachi Consumer Electronics Co Ltd Radiation detecting element and method for manufacturing radiation detecting element
JP2016501082A (en) * 2012-12-03 2016-01-18 テトラ・ラヴァル・ホールディングス・アンド・ファイナンス・ソシエテ・アノニムＴｅｔｒａ Ｌａｖａｌ Ｈｏｌｄｉｎｇｓ ＆ Ｆｉｎａｎｃｅ Ｓ．Ａ． Device for monitoring an electron beam via an electrical sensor having a plurality of conductors

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940285A (en) * 1982-08-31 1984-03-05 Fujitsu Ltd Apparatus for measuring x-ray spectrum
JPH0515996B2 (en) * 1982-08-31 1993-03-03 Fujitsu Ltd
US4700076A (en) * 1983-09-02 1987-10-13 Digital Imaging Company Of America, Inc. Solid-state X-ray receptor and method of making same
JPS60135884A (en) * 1983-12-26 1985-07-19 Shimadzu Corp Semiconductor radiation position detecting apparatus
JPS62100679A (en) * 1985-10-28 1987-05-11 Hitachi Medical Corp Detector for x-ray ct equipment
JPH0411483U (en) * 1990-05-21 1992-01-30
EP1069627A1 (en) * 1999-07-16 2001-01-17 CSEM Centre Suisse d'Electronique et de Microtechnique SA Sensor for low energy particles
FR2796493A1 (en) * 1999-07-16 2001-01-19 Suisse Electronique Microtech LOW ENERGY PARTICLE SENSOR
JP2012023235A (en) * 2010-07-15 2012-02-02 Hitachi Consumer Electronics Co Ltd Radiation detecting element and method for manufacturing radiation detecting element
JP2016501082A (en) * 2012-12-03 2016-01-18 テトラ・ラヴァル・ホールディングス・アンド・ファイナンス・ソシエテ・アノニムＴｅｔｒａ Ｌａｖａｌ Ｈｏｌｄｉｎｇｓ ＆ Ｆｉｎａｎｃｅ Ｓ．Ａ． Device for monitoring an electron beam via an electrical sensor having a plurality of conductors

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