JPS56153779A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- JPS56153779A JPS56153779A JP5751080A JP5751080A JPS56153779A JP S56153779 A JPS56153779 A JP S56153779A JP 5751080 A JP5751080 A JP 5751080A JP 5751080 A JP5751080 A JP 5751080A JP S56153779 A JPS56153779 A JP S56153779A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- frame body
- substrates
- radiation
- dimensional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 6
- 230000004907 flux Effects 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To enable to measure the two-dimensional strength distribution of a radiation flux by means of a simple signal processing circuit by a method wherein a plurality of detecting elements are each formed to other substrates, and surface and back electrodes are also made independent by every element. CONSTITUTION:A plurality of mounting holes are formed to a frame body 11 consisting of an electric insulating material, and semiconductor substrates are housed and fixed into each mounting hole. Si oxide films are made up on the surfaces of the substrates, surface electrodes 14 are built on the oxide films every each substrate and back electrodes 15 are formed on the backs every each substrate. Electrode drawings 16, 17 are disposed on the surace and back of the frame body 11 by every substrate. Thus, a two-dimensional radiation detector is formed in such a manner that a plurality of surface barrier-layer type semiconductor radiation detecting elements are mutually insulated by means of the frame body 11, and arranged in matrix shapes. Consequently, the two-dimensional strength distribution of a radiation flux can be measured by means of a simple signal processing circuit without using a coincidence circuit, etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5751080A JPS56153779A (en) | 1980-04-30 | 1980-04-30 | Semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5751080A JPS56153779A (en) | 1980-04-30 | 1980-04-30 | Semiconductor radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56153779A true JPS56153779A (en) | 1981-11-27 |
Family
ID=13057724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5751080A Pending JPS56153779A (en) | 1980-04-30 | 1980-04-30 | Semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56153779A (en) |
-
1980
- 1980-04-30 JP JP5751080A patent/JPS56153779A/en active Pending
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