JPS55146019A - Pressure detector of semiconductor - Google Patents

Pressure detector of semiconductor

Info

Publication number
JPS55146019A
JPS55146019A JP5384379A JP5384379A JPS55146019A JP S55146019 A JPS55146019 A JP S55146019A JP 5384379 A JP5384379 A JP 5384379A JP 5384379 A JP5384379 A JP 5384379A JP S55146019 A JPS55146019 A JP S55146019A
Authority
JP
Japan
Prior art keywords
pressure
temperature
substrate
sensing element
temperature compensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5384379A
Other languages
Japanese (ja)
Other versions
JPS6020692B2 (en
Inventor
Shunji Shiromizu
Ryuzo Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP54053843A priority Critical patent/JPS6020692B2/en
Priority to US06/087,938 priority patent/US4300395A/en
Priority to DE2945185A priority patent/DE2945185C2/en
Publication of JPS55146019A publication Critical patent/JPS55146019A/en
Publication of JPS6020692B2 publication Critical patent/JPS6020692B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)

Abstract

PURPOSE:To perform accurate temperature compensation, by providing the temperature sensing element to compensate the temperature vairation of the pressure sensitivity of pressure sensing resistive element on the same substrate, in the semiconductor pressure detector using the pressure resistance effect of diffusion layer formed on the semiconductor single crystal substrate. CONSTITUTION:The n-type silicon single crystal substrate 11 finished to diaphragm sensing pressure, which is machined thin for the middle part, is bonded to the pressure introduction base 12. On the substrate 11, the pressure sensing resistive elements R1,R2 constituting the pressure detection bridge in which positive and negative resistance change is caused by pressure, are formed with the p-type diffusion layers 131,132. By controlling the drive voltage of the pressure detection bridge, the pn-junction diode of the heat sensing element to perform temperature compensation is formed with the diffusion layer 133 and the substrate 11. As mentioned above, the pressure sensing element and the temperature sensing element for temperature compensation are formed on the same crystal substrate, then the temperature characteristics of the both are accurately in agreement for accurate temperature compensation.
JP54053843A 1978-11-08 1979-05-01 Semiconductor pressure detection device Expired JPS6020692B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP54053843A JPS6020692B2 (en) 1979-05-01 1979-05-01 Semiconductor pressure detection device
US06/087,938 US4300395A (en) 1978-11-08 1979-10-25 Semiconductor pressure detection device
DE2945185A DE2945185C2 (en) 1978-11-08 1979-11-08 Semiconductor pressure measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54053843A JPS6020692B2 (en) 1979-05-01 1979-05-01 Semiconductor pressure detection device

Publications (2)

Publication Number Publication Date
JPS55146019A true JPS55146019A (en) 1980-11-14
JPS6020692B2 JPS6020692B2 (en) 1985-05-23

Family

ID=12954051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54053843A Expired JPS6020692B2 (en) 1978-11-08 1979-05-01 Semiconductor pressure detection device

Country Status (1)

Country Link
JP (1) JPS6020692B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172776A (en) * 1981-04-15 1982-10-23 Toshiba Corp Semiconductor pressure transducer
JPS60239644A (en) * 1984-05-15 1985-11-28 Shindengen Electric Mfg Co Ltd Semiconductor pressure sensor
JPS61243337A (en) * 1985-04-19 1986-10-29 Yokogawa Electric Corp Semiconductor pressure sensor
JPS6225228A (en) * 1985-07-25 1987-02-03 Ngk Spark Plug Co Ltd Pressure sensor of internal combustion engine
JPS62174247U (en) * 1986-04-25 1987-11-05
JPS6336059U (en) * 1986-08-26 1988-03-08
JPS63283073A (en) * 1987-05-15 1988-11-18 Toshiba Corp Semiconductor pressure sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103454032A (en) * 2013-08-16 2013-12-18 中国电子科技集团公司第四十八研究所 Pressure sensitive core with thermistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49119675A (en) * 1973-03-15 1974-11-15
JPS5024088A (en) * 1973-07-05 1975-03-14

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49119675A (en) * 1973-03-15 1974-11-15
JPS5024088A (en) * 1973-07-05 1975-03-14

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172776A (en) * 1981-04-15 1982-10-23 Toshiba Corp Semiconductor pressure transducer
JPH0158671B2 (en) * 1981-04-15 1989-12-13 Tokyo Shibaura Electric Co
JPS60239644A (en) * 1984-05-15 1985-11-28 Shindengen Electric Mfg Co Ltd Semiconductor pressure sensor
JPS61243337A (en) * 1985-04-19 1986-10-29 Yokogawa Electric Corp Semiconductor pressure sensor
JPS6225228A (en) * 1985-07-25 1987-02-03 Ngk Spark Plug Co Ltd Pressure sensor of internal combustion engine
JPS62174247U (en) * 1986-04-25 1987-11-05
JPS6336059U (en) * 1986-08-26 1988-03-08
JPS63283073A (en) * 1987-05-15 1988-11-18 Toshiba Corp Semiconductor pressure sensor

Also Published As

Publication number Publication date
JPS6020692B2 (en) 1985-05-23

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