JPS5750479A - Detector for detecting pressure and pressure difference of semiconductor - Google Patents

Detector for detecting pressure and pressure difference of semiconductor

Info

Publication number
JPS5750479A
JPS5750479A JP12642780A JP12642780A JPS5750479A JP S5750479 A JPS5750479 A JP S5750479A JP 12642780 A JP12642780 A JP 12642780A JP 12642780 A JP12642780 A JP 12642780A JP S5750479 A JPS5750479 A JP S5750479A
Authority
JP
Japan
Prior art keywords
pressure
thin
groove
central
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12642780A
Other languages
Japanese (ja)
Inventor
Michitaka Shimazoe
Yoshitaka Matsuoka
Akio Yasukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12642780A priority Critical patent/JPS5750479A/en
Publication of JPS5750479A publication Critical patent/JPS5750479A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To improve accuracy in measuring pressure, by a method wherein the thin part of a diaphragm formed by cutting a groove out of a substrate made of a semiconductor single crystal with its central and peripheral parts left untouched is provided with a strain sensitive region, while a second groove is cut into the central part thereof. CONSTITUTION:A cut groove 4 is made in a single crystal 1 such as Si excluding its central part 2 and peripheral part 3. A thin distorted part 5 is provided with a strain resistance element 6, while a second cut groove 7 is made in the central part, to form a thin part 8 and a thick portion 9. By so doing, because film stress caused by the transformation of the distorted part 5 is compensated with the elongation of the thin part 8, the non-linearity of the distortion against pressure is reduced and accuracy in measuring pressure can be improved.
JP12642780A 1980-09-10 1980-09-10 Detector for detecting pressure and pressure difference of semiconductor Pending JPS5750479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12642780A JPS5750479A (en) 1980-09-10 1980-09-10 Detector for detecting pressure and pressure difference of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12642780A JPS5750479A (en) 1980-09-10 1980-09-10 Detector for detecting pressure and pressure difference of semiconductor

Publications (1)

Publication Number Publication Date
JPS5750479A true JPS5750479A (en) 1982-03-24

Family

ID=14934908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12642780A Pending JPS5750479A (en) 1980-09-10 1980-09-10 Detector for detecting pressure and pressure difference of semiconductor

Country Status (1)

Country Link
JP (1) JPS5750479A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63191936A (en) * 1987-01-28 1988-08-09 アンヴェク　メス―ウント　リーガルテクニク　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング　ウント　コンパニー Pressure sensor
JPH0293730U (en) * 1989-01-12 1990-07-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63191936A (en) * 1987-01-28 1988-08-09 アンヴェク　メス―ウント　リーガルテクニク　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング　ウント　コンパニー Pressure sensor
JPH0293730U (en) * 1989-01-12 1990-07-25

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