JPS56114378A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS56114378A
JPS56114378A JP1668380A JP1668380A JPS56114378A JP S56114378 A JPS56114378 A JP S56114378A JP 1668380 A JP1668380 A JP 1668380A JP 1668380 A JP1668380 A JP 1668380A JP S56114378 A JPS56114378 A JP S56114378A
Authority
JP
Japan
Prior art keywords
substrate
notched groove
pressure
thin
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1668380A
Other languages
Japanese (ja)
Other versions
JPS646546B2 (en
Inventor
Akio Yasukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1668380A priority Critical patent/JPS56114378A/en
Publication of JPS56114378A publication Critical patent/JPS56114378A/en
Publication of JPS646546B2 publication Critical patent/JPS646546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Abstract

PURPOSE:To improve a measurement precision by reducing nonlinear characteristics of a pressure and produced stress by method wherein a circular notched groove is formed on the surface in the center of a semiconductor element substrate forming the pressure sensor and an annular notched groove surrounding the circular notched groove at an interval is formed on the reverse at the peripheral edge respectively. CONSTITUTION:The circular notched groove 11 is perforated on the surface in the center 9 of the semiconductor substrate 7 and the annular notched groove 12 is formed on the reverse in the middle part 8 located on the outer periphery of the groove 11 with a thin vertical part 10 of the substrate 7 being inserted between the grooves 11 and 12. Thus, a thin part 8a parallel to the substrate 7 is grown on the surface of the middle part 8 and burried with distortion resistance element 6, and the peripheral edge 13 is left as in the thickness of the substrate 7. Whereby force horizontally produced due to the transformation of the thin part 8a and thin vertical part 10 caused when the substrate 7 is applied with a pressure on the surface is remarkably decreased, the nonlinear characteristic of distortion to the pressure being reduced and the measurement precision is improved.
JP1668380A 1980-02-15 1980-02-15 Semiconductor pressure sensor Granted JPS56114378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1668380A JPS56114378A (en) 1980-02-15 1980-02-15 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1668380A JPS56114378A (en) 1980-02-15 1980-02-15 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPS56114378A true JPS56114378A (en) 1981-09-08
JPS646546B2 JPS646546B2 (en) 1989-02-03

Family

ID=11923108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1668380A Granted JPS56114378A (en) 1980-02-15 1980-02-15 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS56114378A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0115074A2 (en) * 1982-12-29 1984-08-08 Fuji Electric Co. Ltd. Differential pressure measuring device
JPS6310575A (en) * 1986-07-01 1988-01-18 Nippon Denso Co Ltd Semiconductor strain detector
EP0276889A2 (en) * 1987-01-28 1988-08-03 Philips Patentverwaltung GmbH Pressure transducer for static pressure charges with a silicon body
US9952112B2 (en) 2014-05-26 2018-04-24 Kabushiki Kaisha Toshiba Pressure sensor, microphone, ultrasonic sensor, blood pressure sensor, and touch panel

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0115074A2 (en) * 1982-12-29 1984-08-08 Fuji Electric Co. Ltd. Differential pressure measuring device
JPS6310575A (en) * 1986-07-01 1988-01-18 Nippon Denso Co Ltd Semiconductor strain detector
EP0276889A2 (en) * 1987-01-28 1988-08-03 Philips Patentverwaltung GmbH Pressure transducer for static pressure charges with a silicon body
US9952112B2 (en) 2014-05-26 2018-04-24 Kabushiki Kaisha Toshiba Pressure sensor, microphone, ultrasonic sensor, blood pressure sensor, and touch panel

Also Published As

Publication number Publication date
JPS646546B2 (en) 1989-02-03

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