JPS5734373A - Silicon diaphragm - Google Patents
Silicon diaphragmInfo
- Publication number
- JPS5734373A JPS5734373A JP10948180A JP10948180A JPS5734373A JP S5734373 A JPS5734373 A JP S5734373A JP 10948180 A JP10948180 A JP 10948180A JP 10948180 A JP10948180 A JP 10948180A JP S5734373 A JPS5734373 A JP S5734373A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- substrate
- built
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 2
- 230000000994 depressogenic effect Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To obtain a good diaphragm impervious to environment and suitable for a high sensitive pressure transducer by a method wherein on one surface of a P type Si substrate an N type layer is built by diffusion and a P type resistance element is provided within it and after a depressed region to be strained is built on the opposite surface of the substrate and a reversed bias voltage is given between the N type layer and the resistance element. CONSTITUTION:After an N type impurity ion is injected on a surface of a P type Si substrate 1 of which a crystal surface is prepared to be a [110] surface or others and heat treatment is performed an N type region 2 is formed. Next more than one P type regions 3 and an intermediate P type region 5 between them are formed by diffusion along the direction of the <110> crystal axis and a P type region 4 is prepared on both extremes of the substrate 1. After those processes a diaphragm is built by shaping a back surface of the substrate 1 by removing to form a depressed region in correspondence with the region 2. In this arrangement a bridge circuit is built of regions 3 which are used as resistance elements which give piezo-resistive effect and the region 5 is used as a connector for an external electrode and the region 4 is used as a channel stopper. In this arrangement a reverse bias voltage is given between regions 3 and 2 to make a guage rate sufficiently higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10948180A JPS5734373A (en) | 1980-08-09 | 1980-08-09 | Silicon diaphragm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10948180A JPS5734373A (en) | 1980-08-09 | 1980-08-09 | Silicon diaphragm |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5734373A true JPS5734373A (en) | 1982-02-24 |
Family
ID=14511330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10948180A Pending JPS5734373A (en) | 1980-08-09 | 1980-08-09 | Silicon diaphragm |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5734373A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59150480A (en) * | 1983-02-04 | 1984-08-28 | Toshiba Corp | Semiconductor pressure conversion device |
| JPH02116174A (en) * | 1988-10-25 | 1990-04-27 | Nec Corp | Semiconductor pressure sensor |
| JPH03162641A (en) * | 1989-11-20 | 1991-07-12 | Wako:Kk | Force detecting device |
| US6933582B2 (en) | 2002-07-22 | 2005-08-23 | Denso Corporation | Semiconductor sensor having a diffused resistor |
-
1980
- 1980-08-09 JP JP10948180A patent/JPS5734373A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59150480A (en) * | 1983-02-04 | 1984-08-28 | Toshiba Corp | Semiconductor pressure conversion device |
| JPH02116174A (en) * | 1988-10-25 | 1990-04-27 | Nec Corp | Semiconductor pressure sensor |
| JPH03162641A (en) * | 1989-11-20 | 1991-07-12 | Wako:Kk | Force detecting device |
| US6933582B2 (en) | 2002-07-22 | 2005-08-23 | Denso Corporation | Semiconductor sensor having a diffused resistor |
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