JPS5759389A - Semiconductor strain gauge type pressure sensor - Google Patents

Semiconductor strain gauge type pressure sensor

Info

Publication number
JPS5759389A
JPS5759389A JP13433680A JP13433680A JPS5759389A JP S5759389 A JPS5759389 A JP S5759389A JP 13433680 A JP13433680 A JP 13433680A JP 13433680 A JP13433680 A JP 13433680A JP S5759389 A JPS5759389 A JP S5759389A
Authority
JP
Japan
Prior art keywords
modulus
young
electrodes
film
gel state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13433680A
Other languages
Japanese (ja)
Inventor
Kiyomitsu Suzuki
Motohisa Nishihara
Kazuji Yamada
Shigeyuki Kobori
Hideo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13433680A priority Critical patent/JPS5759389A/en
Publication of JPS5759389A publication Critical patent/JPS5759389A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Abstract

PURPOSE:To protect electrodes and the like by a simple method and to enhance temperature characteristics, by forming diffused resistors and the electrodes on one surface of a sensor chip, and coating a gel state film having electric insulating property and Young's modulus in a specified range. CONSTITUTION:The diffused resistor 3 and the electrodes 6A and 6B are formed on one surface of the sensor chip 1 having a silicon diaphragm 2. The gel state film which has the electrical insulating property and Young's modulus of 1-100kpa is coated thereon. For example, the Young's modulus and the thickness of the gel state film are plotted on a curve so that the film thicknesses are 10, 0.8, and 0.2mm. against the Young's modulus 2, 10, and 100kpa, and the limiting film thickness curve is obtained. It is recommended that the film thickness for a given Young's modulus within said range is below the value of the limiting film thickness curve. In this constitution, the electrodes and the like can be protected by the simple method, and the device having good temperature characteristics and high reliability can be obtained.
JP13433680A 1980-09-29 1980-09-29 Semiconductor strain gauge type pressure sensor Pending JPS5759389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13433680A JPS5759389A (en) 1980-09-29 1980-09-29 Semiconductor strain gauge type pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13433680A JPS5759389A (en) 1980-09-29 1980-09-29 Semiconductor strain gauge type pressure sensor

Publications (1)

Publication Number Publication Date
JPS5759389A true JPS5759389A (en) 1982-04-09

Family

ID=15125956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13433680A Pending JPS5759389A (en) 1980-09-29 1980-09-29 Semiconductor strain gauge type pressure sensor

Country Status (1)

Country Link
JP (1) JPS5759389A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0129779A2 (en) * 1983-06-22 1985-01-02 Abbott Laboratories Disposable transducer apparatus for an electromanometry system
JPS6249254U (en) * 1985-09-13 1987-03-26
CN102815174A (en) * 2011-06-07 2012-12-12 无锡华润安盛科技有限公司 Pressure sensor, automobile tyre pressure monitoring system, and pressure sensor manufacturing method
JP2017219461A (en) * 2016-06-09 2017-12-14 長野計器株式会社 Strain detector and method for manufacturing the strain detector

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0129779A2 (en) * 1983-06-22 1985-01-02 Abbott Laboratories Disposable transducer apparatus for an electromanometry system
JPS6249254U (en) * 1985-09-13 1987-03-26
CN102815174A (en) * 2011-06-07 2012-12-12 无锡华润安盛科技有限公司 Pressure sensor, automobile tyre pressure monitoring system, and pressure sensor manufacturing method
JP2017219461A (en) * 2016-06-09 2017-12-14 長野計器株式会社 Strain detector and method for manufacturing the strain detector
CN107490337A (en) * 2016-06-09 2017-12-19 长野计器株式会社 Strain detector and its manufacture method

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