JPS57104852A - Semiconductor sensor - Google Patents

Semiconductor sensor

Info

Publication number
JPS57104852A
JPS57104852A JP55181297A JP18129780A JPS57104852A JP S57104852 A JPS57104852 A JP S57104852A JP 55181297 A JP55181297 A JP 55181297A JP 18129780 A JP18129780 A JP 18129780A JP S57104852 A JPS57104852 A JP S57104852A
Authority
JP
Japan
Prior art keywords
sensor
film
concavity
filled
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55181297A
Other languages
Japanese (ja)
Other versions
JPS6135511B2 (en
Inventor
Yoshitaka Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP55181297A priority Critical patent/JPS57104852A/en
Publication of JPS57104852A publication Critical patent/JPS57104852A/en
Publication of JPS6135511B2 publication Critical patent/JPS6135511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Abstract

PURPOSE:To provide a sensor which is compact and has a long life, by a method wherein a gate part is formed in a concavity, a gate insulating film is formed in the concavity surface, and the concavity is filled with an internal liquid to cover an opening with a penetrating film. CONSTITUTION:A source 2 and a drain 3, which consists of an n<+> type semiconductor region, are formed on a p<-> type conductor substrate 1, a concave process 4 is provided between the source 2 and drain 3, and a gate insulating film 5 is formed on the surface of the concave recess 4. In a comparison electrode sensor, the recess 4 is filled with a non-ion sensitive gelleous material, for example, 1% agarose gel which is buffer-treated with 0.1mol phosphatic liquid to cover an opening part with a silicon rubber film 7 having pin holes. Additionally, the silicon rubber film 7 forms a gas penetrating film, and the internal liquid forms a material corresponding to a detecting gas, and this permits the use of the sensor as a gas sensor. Like this, the recess is filled with the internal liquid, which results in simplifying the manufacture of a sensor and lengening a sensor life.
JP55181297A 1980-12-23 1980-12-23 Semiconductor sensor Granted JPS57104852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55181297A JPS57104852A (en) 1980-12-23 1980-12-23 Semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55181297A JPS57104852A (en) 1980-12-23 1980-12-23 Semiconductor sensor

Publications (2)

Publication Number Publication Date
JPS57104852A true JPS57104852A (en) 1982-06-30
JPS6135511B2 JPS6135511B2 (en) 1986-08-13

Family

ID=16098211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55181297A Granted JPS57104852A (en) 1980-12-23 1980-12-23 Semiconductor sensor

Country Status (1)

Country Link
JP (1) JPS57104852A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243862A (en) * 1987-03-31 1988-10-11 Shimadzu Corp Integrated sensor and its production
FR2666930A1 (en) * 1990-09-14 1992-03-20 Lyon Ecole Centrale PROCESS AND PRODUCTION OF A GRID SURFACE OF AN INTEGRATED ELECTROCHEMICAL SENSOR, CONSISTING OF A FIELD EFFECT TRANSISTOR AND SENSITIVE TO ALKALINE EARTH SPECIES AND SENSOR OBTAINED.

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428174Y2 (en) * 1986-05-21 1992-07-08

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243862A (en) * 1987-03-31 1988-10-11 Shimadzu Corp Integrated sensor and its production
FR2666930A1 (en) * 1990-09-14 1992-03-20 Lyon Ecole Centrale PROCESS AND PRODUCTION OF A GRID SURFACE OF AN INTEGRATED ELECTROCHEMICAL SENSOR, CONSISTING OF A FIELD EFFECT TRANSISTOR AND SENSITIVE TO ALKALINE EARTH SPECIES AND SENSOR OBTAINED.

Also Published As

Publication number Publication date
JPS6135511B2 (en) 1986-08-13

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