JPS577549A - Fet gas sensor - Google Patents

Fet gas sensor

Info

Publication number
JPS577549A
JPS577549A JP8225780A JP8225780A JPS577549A JP S577549 A JPS577549 A JP S577549A JP 8225780 A JP8225780 A JP 8225780A JP 8225780 A JP8225780 A JP 8225780A JP S577549 A JPS577549 A JP S577549A
Authority
JP
Japan
Prior art keywords
gas
film
gas sensitive
insulation film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8225780A
Other languages
Japanese (ja)
Other versions
JPS6312252B2 (en
Inventor
Makoto Yano
Kiyoo Shimada
Kyoichiro Shibatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kuraray Co Ltd
Original Assignee
Kuraray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuraray Co Ltd filed Critical Kuraray Co Ltd
Priority to JP8225780A priority Critical patent/JPS577549A/en
Publication of JPS577549A publication Critical patent/JPS577549A/en
Publication of JPS6312252B2 publication Critical patent/JPS6312252B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To enhance the response speed of a gate insulation type FET by either constructing a gate electrode of a gas sensitive film with a gas diffusing layer provided between the gate electrode and a gate insulation film within a specific range of thickness or covering the gate insulation film with the gas sensitive film. CONSTITUTION:In an FET comprising a drain electrode 1, a source electrode 2, a gate insulation film 5, a channel 6 and a gate electrode 3 having a gas sensitive film 4, a gas diffusing layer 7 is provided between the insulation film 5 and the electrode 3 at a thickness of 200Angstrom -1mu. The diffusing layer 7 employs a silicone-based rubber, a fluorine-based polymer, porous ceramics or the like larger in the gas diffusing speed. In the case of using an O2 sensor, the gas sensitive film employs a metal such as Ag and Pt, a metal oxide such as Ga2O3 or the like. For other gas sensors, appropriate gas sensitive films are used. Otherwise, the insulation film 5 may be covered with a gas sensitive layer 4 and then, the gas diffusing layer 7 and the gate electrode 3. Thus, a stable sensor can be obtained with a faster response.
JP8225780A 1980-06-17 1980-06-17 Fet gas sensor Granted JPS577549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8225780A JPS577549A (en) 1980-06-17 1980-06-17 Fet gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8225780A JPS577549A (en) 1980-06-17 1980-06-17 Fet gas sensor

Publications (2)

Publication Number Publication Date
JPS577549A true JPS577549A (en) 1982-01-14
JPS6312252B2 JPS6312252B2 (en) 1988-03-18

Family

ID=13769389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8225780A Granted JPS577549A (en) 1980-06-17 1980-06-17 Fet gas sensor

Country Status (1)

Country Link
JP (1) JPS577549A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5949767A (en) * 1982-09-16 1984-03-22 松下電工株式会社 Treating device
JPS6133267A (en) * 1984-07-25 1986-02-17 Hitachi Ltd Manufacture of aspheric body
US7368331B2 (en) * 2002-12-26 2008-05-06 Konica Minolta Holdings, Inc. Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit
WO2009024526A1 (en) * 2007-08-22 2009-02-26 Robert Bosch Gmbh Gas sensor
JP2010096762A (en) * 2008-10-15 2010-04-30 Robert Bosch Gmbh Electronic structural element
US8084971B2 (en) 2005-10-20 2011-12-27 Rohm Co., Ltd. Motor drive circuit and disc device using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314935A (en) * 1976-07-27 1978-02-10 Kubota Ltd Shrinkable upset work material
JPS5480194A (en) * 1977-12-08 1979-06-26 Seiko Epson Corp Semiconductor gas sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314935A (en) * 1976-07-27 1978-02-10 Kubota Ltd Shrinkable upset work material
JPS5480194A (en) * 1977-12-08 1979-06-26 Seiko Epson Corp Semiconductor gas sensor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5949767A (en) * 1982-09-16 1984-03-22 松下電工株式会社 Treating device
JPS6133267A (en) * 1984-07-25 1986-02-17 Hitachi Ltd Manufacture of aspheric body
US7368331B2 (en) * 2002-12-26 2008-05-06 Konica Minolta Holdings, Inc. Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit
US7393727B2 (en) 2002-12-26 2008-07-01 Konica Minolta Holdings, Inc. Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit
US8084971B2 (en) 2005-10-20 2011-12-27 Rohm Co., Ltd. Motor drive circuit and disc device using the same
WO2009024526A1 (en) * 2007-08-22 2009-02-26 Robert Bosch Gmbh Gas sensor
JP2010096762A (en) * 2008-10-15 2010-04-30 Robert Bosch Gmbh Electronic structural element

Also Published As

Publication number Publication date
JPS6312252B2 (en) 1988-03-18

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