JPS554571A - Potassium ion sensor - Google Patents

Potassium ion sensor

Info

Publication number
JPS554571A
JPS554571A JP7792278A JP7792278A JPS554571A JP S554571 A JPS554571 A JP S554571A JP 7792278 A JP7792278 A JP 7792278A JP 7792278 A JP7792278 A JP 7792278A JP S554571 A JPS554571 A JP S554571A
Authority
JP
Japan
Prior art keywords
film
layer
gate
insulating film
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7792278A
Other languages
Japanese (ja)
Inventor
Kiyoo Shimada
Makoto Yano
Kyoichiro Shibatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kuraray Co Ltd
Original Assignee
Kuraray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuraray Co Ltd filed Critical Kuraray Co Ltd
Priority to JP7792278A priority Critical patent/JPS554571A/en
Publication of JPS554571A publication Critical patent/JPS554571A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To improve water resistance and stabilize the characteristics of K+ selective film by covering the film surface of an FET having a gate insulating film with specified organic film.
CONSTITUTION: The solution of K+ selective ligand such as valinomycin, hard water soluble K salt such as potassium tetraphenyl borate and high polymer compound such as vinyl chloridevinylidene chloride copolymer is coated and dried on the insulation film of the FET sensor which has a gate at one end of a preferably slender Si chip and has a multilayer structure including SiO2 layer and Si3N4 layer in the insulating film of said gate part, whereby the K+ sensitive layer of thicknesses 1000Å to 500μ, preferably 10 to 100μ is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP7792278A 1978-06-26 1978-06-26 Potassium ion sensor Pending JPS554571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7792278A JPS554571A (en) 1978-06-26 1978-06-26 Potassium ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7792278A JPS554571A (en) 1978-06-26 1978-06-26 Potassium ion sensor

Publications (1)

Publication Number Publication Date
JPS554571A true JPS554571A (en) 1980-01-14

Family

ID=13647567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7792278A Pending JPS554571A (en) 1978-06-26 1978-06-26 Potassium ion sensor

Country Status (1)

Country Link
JP (1) JPS554571A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155727A (en) * 1980-05-02 1981-12-02 Inoue Mtp Co Ltd Method for molding pipe cover formed of foamed synthetic resin integrally on outer periphery of pipe
JPS6069620U (en) * 1983-10-20 1985-05-17 大日本印刷株式会社 Sheet-like laminate including porous synthetic resin layer
US4518557A (en) * 1981-05-18 1985-05-21 James River-Norwalk, Inc. Process for skin foam
US4731002A (en) * 1986-11-19 1988-03-15 American Maplan Corporation Triple-wall foam coextrusion apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155727A (en) * 1980-05-02 1981-12-02 Inoue Mtp Co Ltd Method for molding pipe cover formed of foamed synthetic resin integrally on outer periphery of pipe
JPH0127848B2 (en) * 1980-05-02 1989-05-31 Inoue Mtp Kk
US4518557A (en) * 1981-05-18 1985-05-21 James River-Norwalk, Inc. Process for skin foam
JPS6069620U (en) * 1983-10-20 1985-05-17 大日本印刷株式会社 Sheet-like laminate including porous synthetic resin layer
US4731002A (en) * 1986-11-19 1988-03-15 American Maplan Corporation Triple-wall foam coextrusion apparatus

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