JPS51142980A - Photo resistance layer formation method - Google Patents
Photo resistance layer formation methodInfo
- Publication number
- JPS51142980A JPS51142980A JP6651675A JP6651675A JPS51142980A JP S51142980 A JPS51142980 A JP S51142980A JP 6651675 A JP6651675 A JP 6651675A JP 6651675 A JP6651675 A JP 6651675A JP S51142980 A JPS51142980 A JP S51142980A
- Authority
- JP
- Japan
- Prior art keywords
- formation method
- resistance layer
- layer formation
- photo resistance
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To secure the photo-resistive material in close contact with the conductive layer which is to be etched.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6651675A JPS51142980A (en) | 1975-06-04 | 1975-06-04 | Photo resistance layer formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6651675A JPS51142980A (en) | 1975-06-04 | 1975-06-04 | Photo resistance layer formation method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51142980A true JPS51142980A (en) | 1976-12-08 |
Family
ID=13318085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6651675A Pending JPS51142980A (en) | 1975-06-04 | 1975-06-04 | Photo resistance layer formation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51142980A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106147A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5856340A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Purification of semiconductor wafer |
JPS5941837A (en) * | 1982-08-31 | 1984-03-08 | Mitsubishi Electric Corp | Applying method of photo-resist |
JPS6112045A (en) * | 1984-06-28 | 1986-01-20 | Oki Electric Ind Co Ltd | Formation of bump electrode |
-
1975
- 1975-06-04 JP JP6651675A patent/JPS51142980A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106147A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5856340A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Purification of semiconductor wafer |
JPS5941837A (en) * | 1982-08-31 | 1984-03-08 | Mitsubishi Electric Corp | Applying method of photo-resist |
JPS6112045A (en) * | 1984-06-28 | 1986-01-20 | Oki Electric Ind Co Ltd | Formation of bump electrode |
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