JPS51142980A - Photo resistance layer formation method - Google Patents

Photo resistance layer formation method

Info

Publication number
JPS51142980A
JPS51142980A JP6651675A JP6651675A JPS51142980A JP S51142980 A JPS51142980 A JP S51142980A JP 6651675 A JP6651675 A JP 6651675A JP 6651675 A JP6651675 A JP 6651675A JP S51142980 A JPS51142980 A JP S51142980A
Authority
JP
Japan
Prior art keywords
formation method
resistance layer
layer formation
photo resistance
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6651675A
Other languages
Japanese (ja)
Inventor
Shizuo Ishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6651675A priority Critical patent/JPS51142980A/en
Publication of JPS51142980A publication Critical patent/JPS51142980A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To secure the photo-resistive material in close contact with the conductive layer which is to be etched.
COPYRIGHT: (C)1976,JPO&Japio
JP6651675A 1975-06-04 1975-06-04 Photo resistance layer formation method Pending JPS51142980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6651675A JPS51142980A (en) 1975-06-04 1975-06-04 Photo resistance layer formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6651675A JPS51142980A (en) 1975-06-04 1975-06-04 Photo resistance layer formation method

Publications (1)

Publication Number Publication Date
JPS51142980A true JPS51142980A (en) 1976-12-08

Family

ID=13318085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6651675A Pending JPS51142980A (en) 1975-06-04 1975-06-04 Photo resistance layer formation method

Country Status (1)

Country Link
JP (1) JPS51142980A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106147A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS5856340A (en) * 1981-09-30 1983-04-04 Toshiba Corp Purification of semiconductor wafer
JPS5941837A (en) * 1982-08-31 1984-03-08 Mitsubishi Electric Corp Applying method of photo-resist
JPS6112045A (en) * 1984-06-28 1986-01-20 Oki Electric Ind Co Ltd Formation of bump electrode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106147A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS5856340A (en) * 1981-09-30 1983-04-04 Toshiba Corp Purification of semiconductor wafer
JPS5941837A (en) * 1982-08-31 1984-03-08 Mitsubishi Electric Corp Applying method of photo-resist
JPS6112045A (en) * 1984-06-28 1986-01-20 Oki Electric Ind Co Ltd Formation of bump electrode

Similar Documents

Publication Publication Date Title
JPS51123561A (en) Production method of semicondvctor device
JPS51111072A (en) Photo etching method
JPS5228887A (en) Semiconductive emitter device
JPS51142980A (en) Photo resistance layer formation method
JPS521497A (en) Forming method of transparent conductive indium oxide film
JPS5394770A (en) Photo mask
JPS51139263A (en) Method of selective oxidation of silicon substrate
JPS5244185A (en) Limiter element
JPS546461A (en) Manufacture of semiconductor device
JPS51151094A (en) Light conductive element and its manufacturing method
JPS5240986A (en) Process for production of semiconductor element
JPS52131462A (en) Manufacture of semiconductor device
JPS5211009A (en) Magnetic sheet manufacturing process
JPS5384712A (en) Photographic material
JPS5290160A (en) Waste water treatment method and its device
JPS5263067A (en) Production of semiconductor device
JPS5329668A (en) Production of semiconductor device
JPS5368187A (en) Production of infrared detector
JPS5210084A (en) Dual directional negative resistance semiconductor device
JPS51117648A (en) Liquid crystal indicator
JPS5265895A (en) Preparing multi-layer transparent conductive film
JPS51117350A (en) Manufacturing method for heat conducting material for heat exchangers
JPS5350989A (en) Production of photoconductive film
JPS51147284A (en) Manufacturing process of semiconductor device
JPS5367389A (en) Production of semiconductor laser