JPS645075A - Semiconductor pressure sensor and manufacture of the same - Google Patents
Semiconductor pressure sensor and manufacture of the sameInfo
- Publication number
- JPS645075A JPS645075A JP16037487A JP16037487A JPS645075A JP S645075 A JPS645075 A JP S645075A JP 16037487 A JP16037487 A JP 16037487A JP 16037487 A JP16037487 A JP 16037487A JP S645075 A JPS645075 A JP S645075A
- Authority
- JP
- Japan
- Prior art keywords
- source
- pressure
- film
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To facilitate detecting of pressure by a method wherein a gate electrode is provided on a substrate on which source and drain diffused regions are formed on both the sides of its recessed part and, further, a diaphragm composed of an insulating film is provided and the change of a current induced by the change of the diaphragm caused by an applied pressure is detected. CONSTITUTION:The main surface of a P-type Si semiconductor substrate is covered with an SiO2 film 3. A floating gate electrode 4 is formed on the bottom of a recessed part 2 formed in the predetermined region of the substrate. Source and drain diffused regions 5 and 6 are formed on both the sides of the recessed part 2 and, further, an SiO2 film 8 which is to be a diaphragm is formed above the source and drain regions 5 and 6 and a gate electrode 9, a source electrode 10 and a drain electrode 11 are formed on the film 8. If a pressure P is applied to the film 8 while a voltage is applied between the electrode 9 and the substrate 1, as the thickness of a apace 1 2 is changed, the capacity of the space is changed and the floating gate voltage is changed and a channel current Ic corresponding to the voltage is induced. The pressure can be detected by detecting the current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62160374A JP2586432B2 (en) | 1987-06-26 | 1987-06-26 | Manufacturing method of semiconductor pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62160374A JP2586432B2 (en) | 1987-06-26 | 1987-06-26 | Manufacturing method of semiconductor pressure sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS645075A true JPS645075A (en) | 1989-01-10 |
JP2586432B2 JP2586432B2 (en) | 1997-02-26 |
Family
ID=15713586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62160374A Expired - Lifetime JP2586432B2 (en) | 1987-06-26 | 1987-06-26 | Manufacturing method of semiconductor pressure sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2586432B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5504356A (en) * | 1992-11-16 | 1996-04-02 | Nippondenso Co., Ltd. | Semiconductor accelerometer |
US5503017A (en) * | 1993-05-21 | 1996-04-02 | Nippondenso Co., Ltd. | Semiconductor acceleration sensor |
US5874765A (en) * | 1997-10-28 | 1999-02-23 | Lg Semicon Co., Ltd. | Semiconductor device and method for fabricating the same |
US5929472A (en) * | 1997-04-07 | 1999-07-27 | Motorola, Inc. | Semiconductor floating gate sensor device |
US6772537B2 (en) | 2002-02-01 | 2004-08-10 | Koy Engineering Corporation | Pressure-heat drying method and an apparatus therefor |
WO2013168922A1 (en) * | 2012-05-11 | 2013-11-14 | 포항공과대학교 산학협력단 | Sensor using sensing mechanism having combined static charge and field effect transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5810861A (en) * | 1981-07-14 | 1983-01-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS6294988A (en) * | 1985-10-21 | 1987-05-01 | Sharp Corp | Field effect pressure sensor |
-
1987
- 1987-06-26 JP JP62160374A patent/JP2586432B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5810861A (en) * | 1981-07-14 | 1983-01-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS6294988A (en) * | 1985-10-21 | 1987-05-01 | Sharp Corp | Field effect pressure sensor |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5504356A (en) * | 1992-11-16 | 1996-04-02 | Nippondenso Co., Ltd. | Semiconductor accelerometer |
US5503017A (en) * | 1993-05-21 | 1996-04-02 | Nippondenso Co., Ltd. | Semiconductor acceleration sensor |
US5929472A (en) * | 1997-04-07 | 1999-07-27 | Motorola, Inc. | Semiconductor floating gate sensor device |
US5874765A (en) * | 1997-10-28 | 1999-02-23 | Lg Semicon Co., Ltd. | Semiconductor device and method for fabricating the same |
US6772537B2 (en) | 2002-02-01 | 2004-08-10 | Koy Engineering Corporation | Pressure-heat drying method and an apparatus therefor |
WO2013168922A1 (en) * | 2012-05-11 | 2013-11-14 | 포항공과대학교 산학협력단 | Sensor using sensing mechanism having combined static charge and field effect transistor |
US9634153B2 (en) | 2012-05-11 | 2017-04-25 | Postech Academy-Industry Foundation | Sensor using sensing mechanism having combined static charge and field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JP2586432B2 (en) | 1997-02-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071205 Year of fee payment: 11 |