JPS645075A - Semiconductor pressure sensor and manufacture of the same - Google Patents

Semiconductor pressure sensor and manufacture of the same

Info

Publication number
JPS645075A
JPS645075A JP16037487A JP16037487A JPS645075A JP S645075 A JPS645075 A JP S645075A JP 16037487 A JP16037487 A JP 16037487A JP 16037487 A JP16037487 A JP 16037487A JP S645075 A JPS645075 A JP S645075A
Authority
JP
Japan
Prior art keywords
source
pressure
film
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16037487A
Other languages
Japanese (ja)
Other versions
JP2586432B2 (en
Inventor
Akira Kuroyanagi
Tetsuo Fujii
Tomohiro Funahashi
Susumu Azeyanagi
Shinji Yoshihara
Mineichi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP62160374A priority Critical patent/JP2586432B2/en
Publication of JPS645075A publication Critical patent/JPS645075A/en
Application granted granted Critical
Publication of JP2586432B2 publication Critical patent/JP2586432B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To facilitate detecting of pressure by a method wherein a gate electrode is provided on a substrate on which source and drain diffused regions are formed on both the sides of its recessed part and, further, a diaphragm composed of an insulating film is provided and the change of a current induced by the change of the diaphragm caused by an applied pressure is detected. CONSTITUTION:The main surface of a P-type Si semiconductor substrate is covered with an SiO2 film 3. A floating gate electrode 4 is formed on the bottom of a recessed part 2 formed in the predetermined region of the substrate. Source and drain diffused regions 5 and 6 are formed on both the sides of the recessed part 2 and, further, an SiO2 film 8 which is to be a diaphragm is formed above the source and drain regions 5 and 6 and a gate electrode 9, a source electrode 10 and a drain electrode 11 are formed on the film 8. If a pressure P is applied to the film 8 while a voltage is applied between the electrode 9 and the substrate 1, as the thickness of a apace 1 2 is changed, the capacity of the space is changed and the floating gate voltage is changed and a channel current Ic corresponding to the voltage is induced. The pressure can be detected by detecting the current.
JP62160374A 1987-06-26 1987-06-26 Manufacturing method of semiconductor pressure sensor Expired - Lifetime JP2586432B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62160374A JP2586432B2 (en) 1987-06-26 1987-06-26 Manufacturing method of semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160374A JP2586432B2 (en) 1987-06-26 1987-06-26 Manufacturing method of semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPS645075A true JPS645075A (en) 1989-01-10
JP2586432B2 JP2586432B2 (en) 1997-02-26

Family

ID=15713586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160374A Expired - Lifetime JP2586432B2 (en) 1987-06-26 1987-06-26 Manufacturing method of semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JP2586432B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504356A (en) * 1992-11-16 1996-04-02 Nippondenso Co., Ltd. Semiconductor accelerometer
US5503017A (en) * 1993-05-21 1996-04-02 Nippondenso Co., Ltd. Semiconductor acceleration sensor
US5874765A (en) * 1997-10-28 1999-02-23 Lg Semicon Co., Ltd. Semiconductor device and method for fabricating the same
US5929472A (en) * 1997-04-07 1999-07-27 Motorola, Inc. Semiconductor floating gate sensor device
US6772537B2 (en) 2002-02-01 2004-08-10 Koy Engineering Corporation Pressure-heat drying method and an apparatus therefor
WO2013168922A1 (en) * 2012-05-11 2013-11-14 포항공과대학교 산학협력단 Sensor using sensing mechanism having combined static charge and field effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810861A (en) * 1981-07-14 1983-01-21 Toshiba Corp Semiconductor device and manufacture thereof
JPS6294988A (en) * 1985-10-21 1987-05-01 Sharp Corp Field effect pressure sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810861A (en) * 1981-07-14 1983-01-21 Toshiba Corp Semiconductor device and manufacture thereof
JPS6294988A (en) * 1985-10-21 1987-05-01 Sharp Corp Field effect pressure sensor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504356A (en) * 1992-11-16 1996-04-02 Nippondenso Co., Ltd. Semiconductor accelerometer
US5503017A (en) * 1993-05-21 1996-04-02 Nippondenso Co., Ltd. Semiconductor acceleration sensor
US5929472A (en) * 1997-04-07 1999-07-27 Motorola, Inc. Semiconductor floating gate sensor device
US5874765A (en) * 1997-10-28 1999-02-23 Lg Semicon Co., Ltd. Semiconductor device and method for fabricating the same
US6772537B2 (en) 2002-02-01 2004-08-10 Koy Engineering Corporation Pressure-heat drying method and an apparatus therefor
WO2013168922A1 (en) * 2012-05-11 2013-11-14 포항공과대학교 산학협력단 Sensor using sensing mechanism having combined static charge and field effect transistor
US9634153B2 (en) 2012-05-11 2017-04-25 Postech Academy-Industry Foundation Sensor using sensing mechanism having combined static charge and field effect transistor

Also Published As

Publication number Publication date
JP2586432B2 (en) 1997-02-26

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