JPS645071A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS645071A
JPS645071A JP15977587A JP15977587A JPS645071A JP S645071 A JPS645071 A JP S645071A JP 15977587 A JP15977587 A JP 15977587A JP 15977587 A JP15977587 A JP 15977587A JP S645071 A JPS645071 A JP S645071A
Authority
JP
Japan
Prior art keywords
hole
electrode
gate
substrate
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15977587A
Other languages
Japanese (ja)
Other versions
JPH0644632B2 (en
Inventor
Hirosuke Koyama
Hidemi Ishiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15977587A priority Critical patent/JPH0644632B2/en
Publication of JPS645071A publication Critical patent/JPS645071A/en
Publication of JPH0644632B2 publication Critical patent/JPH0644632B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To realize a high integrity by a method wherein a hole-filling type vertical transistor is formed in a semiconductor substrate and a drain to which an independent potential is applied is confined in the bottom of the hole and an element isolation region is eliminated. CONSTITUTION:A hole 10 whose diameter is larger at the bottom than at the opening is provided in a P-type substrate 1 and an electrically isolated 1st gate electrode 3 is formed on the side wall of the hole 10 with a gate oxide film 2 in-between. A 2nd gate electrode 5 facing the electrode 3 is provided with a 2nd gate oxide film 4 in-between and a metal wiring layer 9 which is brought into contact with a drain layer 6 at the bottom of the hole 10 and with a source layer 7 on the surface of the substrate 1 is also provided. With this constitution, a transistor in which the side wall of the hole 10 is used as a channel region 11 is formed and the electrode 3 functions as a floating gate into which hot carriers produced directly below the channel region are injected and the electrode 5 functions as a control gate.
JP15977587A 1987-06-29 1987-06-29 Semiconductor memory device Expired - Fee Related JPH0644632B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15977587A JPH0644632B2 (en) 1987-06-29 1987-06-29 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15977587A JPH0644632B2 (en) 1987-06-29 1987-06-29 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS645071A true JPS645071A (en) 1989-01-10
JPH0644632B2 JPH0644632B2 (en) 1994-06-08

Family

ID=15700991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15977587A Expired - Fee Related JPH0644632B2 (en) 1987-06-29 1987-06-29 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPH0644632B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6420668A (en) * 1987-07-15 1989-01-24 Sony Corp Programable read only memory
JPH01140775A (en) * 1987-11-27 1989-06-01 Sony Corp Nonvolatile memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3025784U (en) * 1995-12-14 1996-06-25 株式会社芋谷工業 Bag mounting table

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961188A (en) * 1982-09-30 1984-04-07 Toshiba Corp Nonvolatile semiconductor memory storage
JPS6225459A (en) * 1985-07-25 1987-02-03 Nippon Denso Co Ltd Nonvolatile semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961188A (en) * 1982-09-30 1984-04-07 Toshiba Corp Nonvolatile semiconductor memory storage
JPS6225459A (en) * 1985-07-25 1987-02-03 Nippon Denso Co Ltd Nonvolatile semiconductor memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6420668A (en) * 1987-07-15 1989-01-24 Sony Corp Programable read only memory
JPH01140775A (en) * 1987-11-27 1989-06-01 Sony Corp Nonvolatile memory

Also Published As

Publication number Publication date
JPH0644632B2 (en) 1994-06-08

Similar Documents

Publication Publication Date Title
JPS6453577A (en) Nonvolatile semiconductor device and manufacture thereof
JPS6442176A (en) Semiconductor device and manufacture thereof
GB1392599A (en) Semiconductor memory elements
ES8800512A1 (en) Trench transistor.
JPS6414969A (en) Light-shielding type uprom
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS645071A (en) Semiconductor storage device
JPS6431456A (en) Semiconductor device
JPS6431471A (en) Semiconductor device
JPS6454762A (en) Insulated gate field effect transistor
JPS56126977A (en) Junction type field effect transistor
JPS6410673A (en) Non volatile semiconductor memory device
JPS56125875A (en) Semiconductor integrated circuit device
JPS56104473A (en) Semiconductor memory device and manufacture thereof
JPS6489457A (en) Manufacture of semiconductor device
JPS57111067A (en) Nonvolatile memory
JPS6437058A (en) Insulated-gate field-effect transistor
JPS56162873A (en) Insulated gate type field effect semiconductor device
JPS6447075A (en) Semiconductor device
JPS6437877A (en) Semiconductor storage device
JPS6486561A (en) Vertical mos transistor
JPS57121271A (en) Field effect transistor
JPS6437059A (en) Manufacture of semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5793577A (en) Insulated gate type transistor

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees