JPS57128074A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPS57128074A JPS57128074A JP1292881A JP1292881A JPS57128074A JP S57128074 A JPS57128074 A JP S57128074A JP 1292881 A JP1292881 A JP 1292881A JP 1292881 A JP1292881 A JP 1292881A JP S57128074 A JPS57128074 A JP S57128074A
- Authority
- JP
- Japan
- Prior art keywords
- base stand
- sensor
- hole
- diaphragm
- adhered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To obtain the sensor having high measuring accuracy by a method wherein when the Si single crystal, on which four diffused resistance layers are provided on the surface and a concaved section to be used for diaphragm formation is provided on the reverse side, is adhered to a fixing base stand, an Si base stand with a through hole bored on the (100) or (110) face in its center part is used. CONSTITUTION:The four diffused resistance layers 2 to be used for the assembling of a bridge are formed on the surface of an Si substrate 1, a concaved section is provided on the reverse side by performing an etching, and the remaining part of the substrate 1 is used as a thin diaphragm section 3. Then, this semiconductor pressure sensor is adhered to an Si base stand 5. At this time, the through hole 6 to be provided in the center part of the base stand 5 is formed in such a manner that the face (100) or (110) will be appearing and at the same time, the hole 6 is formed into contractive shape. Also, a thin film 7 of boron silicate glass is used as the binding material for the adhesion of the sensor and the base stand 5. Through these procedures, the temperature characteristic of the sensor and the base stand are brought almost to the same degree, no deformation is generated on the diaphragm, and there exists no variation of resistance on the resistance layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1292881A JPS57128074A (en) | 1981-02-02 | 1981-02-02 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1292881A JPS57128074A (en) | 1981-02-02 | 1981-02-02 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57128074A true JPS57128074A (en) | 1982-08-09 |
Family
ID=11818974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1292881A Pending JPS57128074A (en) | 1981-02-02 | 1981-02-02 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57128074A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020118939A1 (en) | 2020-07-17 | 2022-01-20 | Schott Ag | Glass wafer and glass element for pressure sensors |
-
1981
- 1981-02-02 JP JP1292881A patent/JPS57128074A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020118939A1 (en) | 2020-07-17 | 2022-01-20 | Schott Ag | Glass wafer and glass element for pressure sensors |
| WO2022013334A1 (en) | 2020-07-17 | 2022-01-20 | Schott Ag | Glass wafer and glass element for pressure sensors |
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