JPS56165361A - Semiconductor pressure converter - Google Patents

Semiconductor pressure converter

Info

Publication number
JPS56165361A
JPS56165361A JP6923380A JP6923380A JPS56165361A JP S56165361 A JPS56165361 A JP S56165361A JP 6923380 A JP6923380 A JP 6923380A JP 6923380 A JP6923380 A JP 6923380A JP S56165361 A JPS56165361 A JP S56165361A
Authority
JP
Japan
Prior art keywords
silicon
base table
pressure sensing
strain gage
sensing strain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6923380A
Other languages
Japanese (ja)
Inventor
Yutaka Mihashi
Toshio Sogo
Shoichi Kakimoto
Saburo Takamiya
Katsuhiro Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6923380A priority Critical patent/JPS56165361A/en
Publication of JPS56165361A publication Critical patent/JPS56165361A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Abstract

PURPOSE:To decrease the variation in characteristics due to temperatures by adhering a second base table to a first base table having a thermal expansion coefficient which is close to that of silicon, and bonding a silicon diaphragm wherein a pressure sensing strain gage is enclosed to the second base table. CONSTITUTION:The first base table 5 has the thermal expansion coefficient which is close to that of silicon and is provided with a through hole 5a. The second base table 6 having a through hole 6a is thermally compressed to the first base table 5 via a silicon oxide film or silicon glass 7. The silicon diaphragm wherein the pressure sensing strain gage is enclosed is bonded to said second base table 6 by gold silicon eutective alloy 8. Said pressure sensing strain gage comprises P type diffused layer 9 which is formed in the silicon diaphragm 2.
JP6923380A 1980-05-23 1980-05-23 Semiconductor pressure converter Pending JPS56165361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6923380A JPS56165361A (en) 1980-05-23 1980-05-23 Semiconductor pressure converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6923380A JPS56165361A (en) 1980-05-23 1980-05-23 Semiconductor pressure converter

Publications (1)

Publication Number Publication Date
JPS56165361A true JPS56165361A (en) 1981-12-18

Family

ID=13396805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6923380A Pending JPS56165361A (en) 1980-05-23 1980-05-23 Semiconductor pressure converter

Country Status (1)

Country Link
JP (1) JPS56165361A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62127637A (en) * 1985-11-28 1987-06-09 Yokogawa Electric Corp Semiconductor pressure transducer
JPS6320873A (en) * 1986-07-14 1988-01-28 Matsushita Electronics Corp Semiconductor pressure sensor
JPS6461641A (en) * 1987-09-02 1989-03-08 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH01172721A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH01172719A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH0943084A (en) * 1995-07-28 1997-02-14 Denso Corp Sensor device and method for fixing sensor chip
US5721446A (en) * 1995-01-19 1998-02-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor pressure sensor with spacing member disposed between sensor and substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62127637A (en) * 1985-11-28 1987-06-09 Yokogawa Electric Corp Semiconductor pressure transducer
JPS6320873A (en) * 1986-07-14 1988-01-28 Matsushita Electronics Corp Semiconductor pressure sensor
JPS6461641A (en) * 1987-09-02 1989-03-08 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH01172721A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH01172719A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
US5721446A (en) * 1995-01-19 1998-02-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor pressure sensor with spacing member disposed between sensor and substrate
JPH0943084A (en) * 1995-07-28 1997-02-14 Denso Corp Sensor device and method for fixing sensor chip

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