JPS56165361A - Semiconductor pressure converter - Google Patents
Semiconductor pressure converterInfo
- Publication number
- JPS56165361A JPS56165361A JP6923380A JP6923380A JPS56165361A JP S56165361 A JPS56165361 A JP S56165361A JP 6923380 A JP6923380 A JP 6923380A JP 6923380 A JP6923380 A JP 6923380A JP S56165361 A JPS56165361 A JP S56165361A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- base table
- pressure sensing
- strain gage
- sensing strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
PURPOSE:To decrease the variation in characteristics due to temperatures by adhering a second base table to a first base table having a thermal expansion coefficient which is close to that of silicon, and bonding a silicon diaphragm wherein a pressure sensing strain gage is enclosed to the second base table. CONSTITUTION:The first base table 5 has the thermal expansion coefficient which is close to that of silicon and is provided with a through hole 5a. The second base table 6 having a through hole 6a is thermally compressed to the first base table 5 via a silicon oxide film or silicon glass 7. The silicon diaphragm wherein the pressure sensing strain gage is enclosed is bonded to said second base table 6 by gold silicon eutective alloy 8. Said pressure sensing strain gage comprises P type diffused layer 9 which is formed in the silicon diaphragm 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6923380A JPS56165361A (en) | 1980-05-23 | 1980-05-23 | Semiconductor pressure converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6923380A JPS56165361A (en) | 1980-05-23 | 1980-05-23 | Semiconductor pressure converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56165361A true JPS56165361A (en) | 1981-12-18 |
Family
ID=13396805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6923380A Pending JPS56165361A (en) | 1980-05-23 | 1980-05-23 | Semiconductor pressure converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56165361A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62127637A (en) * | 1985-11-28 | 1987-06-09 | Yokogawa Electric Corp | Semiconductor pressure transducer |
JPS6320873A (en) * | 1986-07-14 | 1988-01-28 | Matsushita Electronics Corp | Semiconductor pressure sensor |
JPS6461641A (en) * | 1987-09-02 | 1989-03-08 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
JPH01172721A (en) * | 1987-12-28 | 1989-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
JPH01172719A (en) * | 1987-12-28 | 1989-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
JPH0943084A (en) * | 1995-07-28 | 1997-02-14 | Denso Corp | Sensor device and method for fixing sensor chip |
US5721446A (en) * | 1995-01-19 | 1998-02-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure sensor with spacing member disposed between sensor and substrate |
-
1980
- 1980-05-23 JP JP6923380A patent/JPS56165361A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62127637A (en) * | 1985-11-28 | 1987-06-09 | Yokogawa Electric Corp | Semiconductor pressure transducer |
JPS6320873A (en) * | 1986-07-14 | 1988-01-28 | Matsushita Electronics Corp | Semiconductor pressure sensor |
JPS6461641A (en) * | 1987-09-02 | 1989-03-08 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
JPH01172721A (en) * | 1987-12-28 | 1989-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
JPH01172719A (en) * | 1987-12-28 | 1989-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
US5721446A (en) * | 1995-01-19 | 1998-02-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure sensor with spacing member disposed between sensor and substrate |
JPH0943084A (en) * | 1995-07-28 | 1997-02-14 | Denso Corp | Sensor device and method for fixing sensor chip |
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