JPS5737235A - Semiconductor pressure-sensitive device - Google Patents

Semiconductor pressure-sensitive device

Info

Publication number
JPS5737235A
JPS5737235A JP11379080A JP11379080A JPS5737235A JP S5737235 A JPS5737235 A JP S5737235A JP 11379080 A JP11379080 A JP 11379080A JP 11379080 A JP11379080 A JP 11379080A JP S5737235 A JPS5737235 A JP S5737235A
Authority
JP
Japan
Prior art keywords
diaphragm
thermal strain
thin
thin film
thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11379080A
Other languages
Japanese (ja)
Inventor
Arimasa Abe
Katsuhiro Kinoshita
Mitsutaka Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP11379080A priority Critical patent/JPS5737235A/en
Publication of JPS5737235A publication Critical patent/JPS5737235A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To keep a changed mechanically by making partially a semiconductor substrate thin to constitute the thin wall part as a diaphragm having a thermal strain and by deforming the diaphragm in a concave shape or a convex shape by the thermal strain. CONSTITUTION:A silicon semiconductor substrate 10 is made patially thin by a concave part 11, and the thin wall part is made to be a diaphragm 12. And on the diaphragm 12, a thin film 16, e.g., silicon oxide, different in the thermal expansion coefficient from silicon being the raw material of said diaphragm 12 is formed. Said thin film 16 is quenched in a thermal oxidation process, accordingly, a large thermal strain is generated along the interface between the thin film 16 and the diaphragm 12, and by said thermal strain, the diaphragm 12 is deformed in a concave shape. In said instance, the diaphragm 12 can hold the deformed state mechanically by said thermal strain when the external pressure is applied from the deformed side.
JP11379080A 1980-08-19 1980-08-19 Semiconductor pressure-sensitive device Pending JPS5737235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11379080A JPS5737235A (en) 1980-08-19 1980-08-19 Semiconductor pressure-sensitive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11379080A JPS5737235A (en) 1980-08-19 1980-08-19 Semiconductor pressure-sensitive device

Publications (1)

Publication Number Publication Date
JPS5737235A true JPS5737235A (en) 1982-03-01

Family

ID=14621148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11379080A Pending JPS5737235A (en) 1980-08-19 1980-08-19 Semiconductor pressure-sensitive device

Country Status (1)

Country Link
JP (1) JPS5737235A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201228A (en) * 1984-03-27 1985-10-11 Yokogawa Hokushin Electric Corp Pressure sensor
JPS60201229A (en) * 1984-03-27 1985-10-11 Yokogawa Hokushin Electric Corp Pressure sensor
JP2014507666A (en) * 2011-03-09 2014-03-27 オプセンス インコーポレイテッド Compact high-sensitivity pressure sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201228A (en) * 1984-03-27 1985-10-11 Yokogawa Hokushin Electric Corp Pressure sensor
JPS60201229A (en) * 1984-03-27 1985-10-11 Yokogawa Hokushin Electric Corp Pressure sensor
JPH0542609B2 (en) * 1984-03-27 1993-06-29 Yokogawa Electric Corp
JPH0542610B2 (en) * 1984-03-27 1993-06-29 Yokogawa Electric Corp
JP2014507666A (en) * 2011-03-09 2014-03-27 オプセンス インコーポレイテッド Compact high-sensitivity pressure sensor

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