JPS53131300A - Production of silicon oxide film - Google Patents

Production of silicon oxide film

Info

Publication number
JPS53131300A
JPS53131300A JP11880077A JP11880077A JPS53131300A JP S53131300 A JPS53131300 A JP S53131300A JP 11880077 A JP11880077 A JP 11880077A JP 11880077 A JP11880077 A JP 11880077A JP S53131300 A JPS53131300 A JP S53131300A
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
production
gas
spraying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11880077A
Other languages
Japanese (ja)
Other versions
JPS5824374B2 (en
Inventor
Shunpei Yamazaki
Yuriko Sugimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP52118800A priority Critical patent/JPS5824374B2/en
Publication of JPS53131300A publication Critical patent/JPS53131300A/en
Publication of JPS5824374B2 publication Critical patent/JPS5824374B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To economically produce a uniform silicon oxide film in a high yield by spraying an oxide gas and a silicide gas upon a substrate set opposite to the gas streams in a reactor under reduced press. or a vacuum.
JP52118800A 1977-10-03 1977-10-03 Silicon oxide film production method Expired JPS5824374B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52118800A JPS5824374B2 (en) 1977-10-03 1977-10-03 Silicon oxide film production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52118800A JPS5824374B2 (en) 1977-10-03 1977-10-03 Silicon oxide film production method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4149371A Division JPS5652877B1 (en) 1971-06-10 1971-06-10

Publications (2)

Publication Number Publication Date
JPS53131300A true JPS53131300A (en) 1978-11-15
JPS5824374B2 JPS5824374B2 (en) 1983-05-20

Family

ID=14745417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52118800A Expired JPS5824374B2 (en) 1977-10-03 1977-10-03 Silicon oxide film production method

Country Status (1)

Country Link
JP (1) JPS5824374B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194177A (en) * 1989-01-23 1990-07-31 Anelva Corp Apparatus and method for producing thin film
USRE36623E (en) * 1986-12-19 2000-03-21 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
US6167834B1 (en) 1986-12-19 2001-01-02 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JP2006199570A (en) * 2004-12-24 2006-08-03 Humo Laboratory Ltd Manufacturing apparatus of quartz crystal thin film
JP2006206422A (en) * 2004-12-27 2006-08-10 Humo Laboratory Ltd Apparatus for manufacturing quartz crystal thin film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4515151Y1 (en) * 1967-04-03 1970-06-25
JPS5132597A (en) * 1974-09-11 1976-03-19 Kanebo Ltd Pirido * 2 33d * pirimijinjudotai no seizoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4515151Y1 (en) * 1967-04-03 1970-06-25
JPS5132597A (en) * 1974-09-11 1976-03-19 Kanebo Ltd Pirido * 2 33d * pirimijinjudotai no seizoho

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE36623E (en) * 1986-12-19 2000-03-21 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
US6167834B1 (en) 1986-12-19 2001-01-02 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPH02194177A (en) * 1989-01-23 1990-07-31 Anelva Corp Apparatus and method for producing thin film
JP2006199570A (en) * 2004-12-24 2006-08-03 Humo Laboratory Ltd Manufacturing apparatus of quartz crystal thin film
JP4682001B2 (en) * 2004-12-24 2011-05-11 株式会社ヒューモラボラトリー Crystal thin film manufacturing equipment
JP2006206422A (en) * 2004-12-27 2006-08-10 Humo Laboratory Ltd Apparatus for manufacturing quartz crystal thin film

Also Published As

Publication number Publication date
JPS5824374B2 (en) 1983-05-20

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