JPS553623A - Semiconductor pressure sensor - Google Patents

Abstract

PURPOSE: To improve temperature characteristics and durability by constituting a structure of containers form ceramics, whose linear expansion coefficient is equivalent to that of Si, when an Si diaphragm having diffusion resistance is enclosed in a container comprising an attachment a cap, and a framework.

CONSTITUTION: A diffused resistance 13 is formed at the thin portion of Si having sufficient rigidity whose peripheral is thick and center is thin, and an Si diaphragm 12 is made. Then, peripheral of the diaphragm 12 is stuck to an attachment 14 having a hole 14' for introducing pressure by the use of a sticking layer comprising a w film 24, an Ni film 23, and an Au film 22. The top of the peripheral is fixed to a framework 16, to which terminals 17 and 18 are pierced and fixed by a glass bonding agent 25, by the use of the Ni film 23 and the w film 24. Then a cap 15 is covered by the use of the film 24. In this constitution, the attachment 14, the cap 15, and the framework 16 are made from ceramics such as mullite and zircon whose linear expansion coefficients are approximately equal to that of Si, respectively.

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