JPS5451490A - Semiconductor pressure converter - Google Patents
Semiconductor pressure converterInfo
- Publication number
- JPS5451490A JPS5451490A JP11753977A JP11753977A JPS5451490A JP S5451490 A JPS5451490 A JP S5451490A JP 11753977 A JP11753977 A JP 11753977A JP 11753977 A JP11753977 A JP 11753977A JP S5451490 A JPS5451490 A JP S5451490A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- bonding layer
- pressure
- bonding
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE: To reduce the error due to hydro static pressure, by avoiding the swelling of the bonding layer at the side circumference of the substrate through the reduced bonding area of the fixed base than the external size of the pressure converting substrate.
CONSTITUTION: The diaphragm 2 thin in thickenss is formed at the center of the N type Si singlecrystal substrate 1, and it is covered with the insulation layer 4. Next, opening is placed at the diaphragm 2 and the P type resistive layres 31 and 32 are formed by diffusion and after coating the Al electrode wiring layar 5 on it, the leads 6 are bonded. The thick part at the circumference of the pressure conversion substrate 17 thus constituted is heated and fixed via the bonding layer 18 consisting of galss powder on the fixed base 19 of Si. At this time, the bonding edge surface is made smaller than the external diameter of the pressure converting substrate 17. Thus, no bonding layer 18 is swelled up on the side surface of the substrate 17, and the stress based on the difference of thermal expandion rate between the bonding layer 18 and the substrate 17 is operated from external circumferenc to the substrate 17, and the error due to hydrostatic pressure is made very small
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11753977A JPS5451490A (en) | 1977-09-30 | 1977-09-30 | Semiconductor pressure converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11753977A JPS5451490A (en) | 1977-09-30 | 1977-09-30 | Semiconductor pressure converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5451490A true JPS5451490A (en) | 1979-04-23 |
Family
ID=14714289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11753977A Pending JPS5451490A (en) | 1977-09-30 | 1977-09-30 | Semiconductor pressure converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5451490A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5856476A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Semiconductor pressure converter |
| JPS58106955U (en) * | 1982-01-18 | 1983-07-21 | 株式会社東芝 | Semiconductor pressure transducer |
| US4975390A (en) * | 1986-12-18 | 1990-12-04 | Nippondenso Co. Ltd. | Method of fabricating a semiconductor pressure sensor |
| JPH0740U (en) * | 1993-03-19 | 1995-01-06 | 瑞枝 佐藤 | Cat shower hat |
| US6084257A (en) * | 1995-05-24 | 2000-07-04 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| US6316796B1 (en) | 1995-05-24 | 2001-11-13 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
-
1977
- 1977-09-30 JP JP11753977A patent/JPS5451490A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5856476A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Semiconductor pressure converter |
| JPS58106955U (en) * | 1982-01-18 | 1983-07-21 | 株式会社東芝 | Semiconductor pressure transducer |
| US4975390A (en) * | 1986-12-18 | 1990-12-04 | Nippondenso Co. Ltd. | Method of fabricating a semiconductor pressure sensor |
| JPH0740U (en) * | 1993-03-19 | 1995-01-06 | 瑞枝 佐藤 | Cat shower hat |
| US6084257A (en) * | 1995-05-24 | 2000-07-04 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| US6316796B1 (en) | 1995-05-24 | 2001-11-13 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
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